公开(公告)号：US20220238553A1

公开(公告)日：2022-07-28

申请号：US17718863

申请日：2022-04-12

Applicant: Micron Technology, Inc.

Inventor： Ramey M. Abdelrahaman ,  Jeslin J. Wu ,  Chandra Tiwari ,  Kunai Shrotri ,  Swapnil Lengade

IPC: H01L27/11582 ,  H01L27/11524 ,  H01L27/11556 ,  H01L27/1157 ,  H01L21/311 ,  H01L21/02 ,  H01L21/3115

Abstract: Some embodiments include an integrated assembly having a vertical stack of alternating insulative levels and conductive levels. The insulative levels have a same primary composition as one another. At least one of the insulative levels is compositionally different relative to others of the insulative levels due to said at least one of the insulative levels including dopant dispersed within the primary composition. An opening extends vertically through the stack. Some embodiments include methods of forming integrated assemblies.