-
1.
公开(公告)号:US10950565B2
公开(公告)日:2021-03-16
申请号:US16810768
申请日:2020-03-05
Applicant: Micron Technology, Inc.
Inventor: Kyle S. Mayer , Owen R. Fay
IPC: H01L23/00 , H01L21/288
Abstract: Semiconductor dies having interconnect structures formed thereon, and associated systems and methods, are disclosed herein. In one embodiment, an interconnect structure includes a conductive material electrically coupled to an electrically conductive contact of a semiconductor die. The conductive material includes a first portion vertically aligned with the conductive contact, and a second portion that extends laterally away from the conductive contact. A solder material is disposed on the second portion of the interconnect structure such that the solder material is at least partially laterally offset from the conductive contact of the semiconductor die. In some embodiments, an interconnect structure can further include a containment layer that prevents wicking or other undesirable movement of the solder material during a reflow process.
-
2.
公开(公告)号:US20190198470A1
公开(公告)日:2019-06-27
申请号:US16182924
申请日:2018-11-07
Applicant: Micron Technology, Inc.
Inventor: Kyle S. Mayer , Owen R. Fay
IPC: H01L23/00 , H01L21/288
Abstract: Semiconductor dies having interconnect structures formed thereon, and associated systems and methods, are disclosed herein. In one embodiment, an interconnect structure includes a conductive material electrically coupled to an electrically conductive contact of a semiconductor die. The conductive material includes a first portion vertically aligned with the conductive contact, and a second portion that extends laterally away from the conductive contact. A solder material is disposed on the second portion of the interconnect structure such that the solder material is at least partially laterally offset from the conductive contact of the semiconductor die. In some embodiments, an interconnect structure can further include a containment layer that prevents wicking or other undesirable movement of the solder material during a reflow process.
-
3.
公开(公告)号:US10600750B2
公开(公告)日:2020-03-24
申请号:US16182924
申请日:2018-11-07
Applicant: Micron Technology, Inc.
Inventor: Kyle S. Mayer , Owen R. Fay
IPC: H01L23/00 , H01L21/288
Abstract: Semiconductor dies having interconnect structures formed thereon, and associated systems and methods, are disclosed herein. In one embodiment, an interconnect structure includes a conductive material electrically coupled to an electrically conductive contact of a semiconductor die. The conductive material includes a first portion vertically aligned with the conductive contact, and a second portion that extends laterally away from the conductive contact. A solder material is disposed on the second portion of the interconnect structure such that the solder material is at least partially laterally offset from the conductive contact of the semiconductor die. In some embodiments, an interconnect structure can further include a containment layer that prevents wicking or other undesirable movement of the solder material during a reflow process.
-
4.
公开(公告)号:US10297561B1
公开(公告)日:2019-05-21
申请号:US15853512
申请日:2017-12-22
Applicant: Micron Technology, Inc.
Inventor: Kyle S. Mayer , Owen R. Fay
IPC: H01L23/00 , H01L21/288
Abstract: Semiconductor dies having interconnect structures formed thereon, and associated systems and methods, are disclosed herein. In one embodiment, an interconnect structure includes a conductive material electrically coupled to an electrically conductive contact of a semiconductor die. The conductive material includes a first portion vertically aligned with the conductive contact, and a second portion that extends laterally away from the conductive contact. A solder material is disposed on the second portion of the interconnect structure such that the solder material is at least partially laterally offset from the conductive contact of the semiconductor die. In some embodiments, an interconnect structure can further include a containment layer that prevents wicking or other undesirable movement of the solder material during a reflow process.
-
-
-