公开(公告)号：US20230350579A1

公开(公告)日：2023-11-02

申请号：US17637428

申请日：2021-03-18

Applicant: Micron Technology, Inc.

Inventor： Xing Wang ,  Liu Yang ,  Xiaolai Zhu ,  Bin Zhao

IPC: G06F3/06

CPC classification number: G06F3/0622 ,  G06F3/064 ,  G06F3/0679

Abstract: Methods, systems, and devices for dynamic memory management operation are described. A memory system may store data in a first block that includes a first type of memory cells configured to store a single bit of information (e.g., single level cells (SLCs)). The memory system may set a flag associated with the data indicating whether the data includes secure information and is to remain in a block that includes SLCs after a memory management operation (e.g., a garbage collection operation). The memory system may store, as part of the memory management operation for the first block and based on the flag, valid data of the first block in a second block that includes SLCs or a third block that includes a second type of memory cells configured to store two or more bits of information.

公开(公告)号：US11954336B2

公开(公告)日：2024-04-09

申请号：US17637428

申请日：2021-03-18

Applicant: Micron Technology, Inc.

Inventor： Xing Wang ,  Liu Yang ,  Xiaolai Zhu ,  Bin Zhao

IPC: G06F12/00 ,  G06F3/06

CPC classification number: G06F3/0622 ,  G06F3/064 ,  G06F3/0679

Abstract: Methods, systems, and devices for dynamic memory management operation are described. A memory system may store data in a first block that includes a first type of memory cells configured to store a single bit of information (e.g., single level cells (SLCs)). The memory system may set a flag associated with the data indicating whether the data includes secure information and is to remain in a block that includes SLCs after a memory management operation (e.g., a garbage collection operation). The memory system may store, as part of the memory management operation for the first block and based on the flag, valid data of the first block in a second block that includes SLCs or a third block that includes a second type of memory cells configured to store two or more bits of information.

公开(公告)号：US20240295971A1

公开(公告)日：2024-09-05

申请号：US18604118

申请日：2024-03-13

Applicant: Micron Technology, Inc.

Inventor： Xing Wang ,  Liu Yang ,  Xiaolai Zhu ,  Bin Zhao

IPC: G06F3/06

CPC classification number: G06F3/0622 ,  G06F3/064 ,  G06F3/0679

Abstract: Methods, systems, and devices for dynamic memory management operation are described. A memory system may store data in a first block that includes a first type of memory cells configured to store a single bit of information (e.g., single level cells (SLCs)). The memory system may set a flag associated with the data indicating whether the data includes secure information and is to remain in a block that includes SLCs after a memory management operation (e.g., a garbage collection operation). The memory system may store, as part of the memory management operation for the first block and based on the flag, valid data of the first block in a second block that includes SLCs or a third block that includes a second type of memory cells configured to store two or more bits of information.