Dynamic memory management operation

    公开(公告)号:US11954336B2

    公开(公告)日:2024-04-09

    申请号:US17637428

    申请日:2021-03-18

    CPC classification number: G06F3/0622 G06F3/064 G06F3/0679

    Abstract: Methods, systems, and devices for dynamic memory management operation are described. A memory system may store data in a first block that includes a first type of memory cells configured to store a single bit of information (e.g., single level cells (SLCs)). The memory system may set a flag associated with the data indicating whether the data includes secure information and is to remain in a block that includes SLCs after a memory management operation (e.g., a garbage collection operation). The memory system may store, as part of the memory management operation for the first block and based on the flag, valid data of the first block in a second block that includes SLCs or a third block that includes a second type of memory cells configured to store two or more bits of information.

    DYNAMIC MEMORY MANAGEMENT OPERATION
    3.
    发明公开

    公开(公告)号:US20240295971A1

    公开(公告)日:2024-09-05

    申请号:US18604118

    申请日:2024-03-13

    CPC classification number: G06F3/0622 G06F3/064 G06F3/0679

    Abstract: Methods, systems, and devices for dynamic memory management operation are described. A memory system may store data in a first block that includes a first type of memory cells configured to store a single bit of information (e.g., single level cells (SLCs)). The memory system may set a flag associated with the data indicating whether the data includes secure information and is to remain in a block that includes SLCs after a memory management operation (e.g., a garbage collection operation). The memory system may store, as part of the memory management operation for the first block and based on the flag, valid data of the first block in a second block that includes SLCs or a third block that includes a second type of memory cells configured to store two or more bits of information.

    Source address memory managment
    4.
    发明授权

    公开(公告)号:US11928356B2

    公开(公告)日:2024-03-12

    申请号:US17555160

    申请日:2021-12-17

    CPC classification number: G06F3/0655 G06F3/0604 G06F3/064

    Abstract: Methods, systems, and apparatuses related to source address memory management are described. For example, a controller can be coupled to a memory device to select a source block, a destination block, and a metadata block. The controller can store metadata indicative of an address of the source block in the metadata block. The controller can perform a memory management operation to transfer data from the source block to the destination block.

    WRITE BOOSTER BUFFER FLUSH OPERATION
    5.
    发明公开

    公开(公告)号:US20230376206A1

    公开(公告)日:2023-11-23

    申请号:US17632099

    申请日:2021-03-19

    CPC classification number: G06F3/0613 G06F3/0656 G06F3/0679

    Abstract: Techniques are described herein for performing a flush operation for a write booster buffer of a memory system. The flush operation may include swapping valid blocks in the write booster buffer for invalid blocks in a storage space of the memory system. After swapping the blocks, the memory system may transfer the information from a first type of blocks that were formerly assigned to the write booster buffer to a second type of blocks in the storage space. In such a flush operation, space is made available in the write booster buffer with less latency than it would take to transfer information between blocks, thereby improving the performance of the write booster mode.

    DYNAMIC MEMORY MANAGEMENT OPERATION
    6.
    发明公开

    公开(公告)号:US20230350579A1

    公开(公告)日:2023-11-02

    申请号:US17637428

    申请日:2021-03-18

    CPC classification number: G06F3/0622 G06F3/064 G06F3/0679

    Abstract: Methods, systems, and devices for dynamic memory management operation are described. A memory system may store data in a first block that includes a first type of memory cells configured to store a single bit of information (e.g., single level cells (SLCs)). The memory system may set a flag associated with the data indicating whether the data includes secure information and is to remain in a block that includes SLCs after a memory management operation (e.g., a garbage collection operation). The memory system may store, as part of the memory management operation for the first block and based on the flag, valid data of the first block in a second block that includes SLCs or a third block that includes a second type of memory cells configured to store two or more bits of information.

    Write booster buffer flush operation

    公开(公告)号:US12216905B2

    公开(公告)日:2025-02-04

    申请号:US17632099

    申请日:2021-03-19

    Abstract: Techniques are described herein for performing a flush operation for a write booster buffer of a memory system. The flush operation may include swapping valid blocks in the write booster buffer for invalid blocks in a storage space of the memory system. After swapping the blocks, the memory system may transfer the information from a first type of blocks that were formerly assigned to the write booster buffer to a second type of blocks in the storage space. In such a flush operation, space is made available in the write booster buffer with less latency than it would take to transfer information between blocks, thereby improving the performance of the write booster mode.

    ADDRESS MAPPINGS FOR RANDOM ACCESS OPERATIONS

    公开(公告)号:US20240201860A1

    公开(公告)日:2024-06-20

    申请号:US18511814

    申请日:2023-11-16

    CPC classification number: G06F3/0613 G06F3/0656 G06F3/0679 G06F12/1009

    Abstract: Methods, systems, and devices for address mappings for random access operations are described. A portion of a L2P table may be loaded (e.g., to a buffer) upon receiving a write command (e.g., a random write command). In some instances, one or more entries (e.g., one or more mappings) included in the portion of the L2P table may be updated based on the write command. The portion of the L2P table may be maintained in the buffer during subsequent access operations, such as random read operations. The subsequent access operations may utilize the portion of the L2P table to access a memory device.

    Adaptive block mapping
    9.
    发明授权

    公开(公告)号:US11922069B2

    公开(公告)日:2024-03-05

    申请号:US17750131

    申请日:2022-05-20

    CPC classification number: G06F3/0659 G06F3/061 G06F3/0679

    Abstract: Methods, systems, and devices for adaptive block mapping are described. In some examples, a first superblock and a second superblock may be established across one or more dice of a memory device. The superblocks may each include one or more blocks from a plurality of planes of a memory die. In some examples, the second superblock may include at least one bad block (e.g., defective block) in addition to one or more good blocks (e.g., non-defective blocks). The memory device may receive a command for writing data in a first mode and may write a first subset of the data to the first superblock in the first mode, a second subset of the data to the second superblock in the first mode, and one or more blocks associated with the second superblock in a second mode. Additionally or alternatively, the memory device may receive a second command for writing data in the second mode and may write the data to the first superblock in the first mode.

    Virtual indexing in a memory device

    公开(公告)号:US12210448B2

    公开(公告)日:2025-01-28

    申请号:US18037631

    申请日:2022-09-01

    Abstract: A method includes writing, to a first data structure, indices corresponding to address locations of a logical-to-physical (L2P) data structure that maps a plurality of logical block addresses (LBAs) associated with the L2P data structure, initiating performance of a media management operation involving one or more memory blocks in which data associated with the LBAs is written, and refraining from rewriting particular entries in the L2P table that correspond to LBAs whose index in the first data structure is a particular value during performance of the media management operation.

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