Polarity-conditioned memory cell write operations

    公开(公告)号:US10748615B2

    公开(公告)日:2020-08-18

    申请号:US16419831

    申请日:2019-05-22

    Abstract: Methods, systems, and devices for polarity-conditioned memory cell write operations are described. A memory cell may be written with a logic state by performing a write operation that includes applying a first write voltage across the memory cell with a first polarity, and applying a second write voltage across the memory cell after applying the first write voltage of the write operation, the second write voltage of the write operation having a second polarity that is different than the first polarity. In some examples, performing a write operation on a memory cell having different voltage polarities across the memory call may allow such a write operation to be completed in a shorter time than a write operation having a voltage of a single polarity.

    POLARITY-CONDITIONED MEMORY CELL WRITE OPERATIONS

    公开(公告)号:US20190311768A1

    公开(公告)日:2019-10-10

    申请号:US16419831

    申请日:2019-05-22

    Abstract: Methods, systems, and devices for polarity-conditioned memory cell write operations are described. A memory cell may be written with a logic state by performing a write operation that includes applying a first write voltage across the memory cell with a first polarity, and applying a second write voltage across the memory cell after applying the first write voltage of the write operation, the second write voltage of the write operation having a second polarity that is different than the first polarity. In some examples, performing a write operation on a memory cell having different voltage polarities across the memory call may allow such a write operation to be completed in a shorter time than a write operation having a voltage of a single polarity.

    Polarity-conditioned memory cell write operations

    公开(公告)号:US10354729B1

    公开(公告)日:2019-07-16

    申请号:US15857188

    申请日:2017-12-28

    Abstract: Methods, systems, and devices for polarity-conditioned memory cell write operations are described. A memory cell may be written with a logic state by performing a write operation that includes applying a first write voltage across the memory cell with a first polarity, and applying a second write voltage across the memory cell after applying the first write voltage of the write operation, the second write voltage of the write operation having a second polarity that is different than the first polarity. In some examples, performing a write operation on a memory cell having different voltage polarities across the memory call may allow such a write operation to be completed in a shorter time than a write operation having a voltage of a single polarity.

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