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公开(公告)号:US20190206489A1
公开(公告)日:2019-07-04
申请号:US15857188
申请日:2017-12-28
Applicant: Micron Technology, Inc.
Inventor: Hongmei Wang , Luca Crespi , Debayan Mahalanabis , Fabio Pellizzer
IPC: G11C13/00
CPC classification number: G11C13/0069 , G11C13/0004 , G11C13/0026 , G11C13/0028 , G11C13/0038 , G11C13/004 , G11C2013/0073 , G11C2013/0076
Abstract: Methods, systems, and devices for polarity-conditioned memory cell write operations are described. A memory cell may be written with a logic state by performing a write operation that includes applying a first write voltage across the memory cell with a first polarity, and applying a second write voltage across the memory cell after applying the first write voltage of the write operation, the second write voltage of the write operation having a second polarity that is different than the first polarity. In some examples, performing a write operation on a memory cell having different voltage polarities across the memory call may allow such a write operation to be completed in a shorter time than a write operation having a voltage of a single polarity.
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公开(公告)号:US10748615B2
公开(公告)日:2020-08-18
申请号:US16419831
申请日:2019-05-22
Applicant: Micron Technology, Inc.
Inventor: Hongmei Wang , Luca Crespi , Debayan Mahalanabis , Fabio Pellizzer
IPC: G11C13/00
Abstract: Methods, systems, and devices for polarity-conditioned memory cell write operations are described. A memory cell may be written with a logic state by performing a write operation that includes applying a first write voltage across the memory cell with a first polarity, and applying a second write voltage across the memory cell after applying the first write voltage of the write operation, the second write voltage of the write operation having a second polarity that is different than the first polarity. In some examples, performing a write operation on a memory cell having different voltage polarities across the memory call may allow such a write operation to be completed in a shorter time than a write operation having a voltage of a single polarity.
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公开(公告)号:US20190311768A1
公开(公告)日:2019-10-10
申请号:US16419831
申请日:2019-05-22
Applicant: Micron Technology, Inc.
Inventor: Hongmei Wang , Luca Crespi , Debayan Mahalanabis , Fabio Pellizzer
IPC: G11C13/00
Abstract: Methods, systems, and devices for polarity-conditioned memory cell write operations are described. A memory cell may be written with a logic state by performing a write operation that includes applying a first write voltage across the memory cell with a first polarity, and applying a second write voltage across the memory cell after applying the first write voltage of the write operation, the second write voltage of the write operation having a second polarity that is different than the first polarity. In some examples, performing a write operation on a memory cell having different voltage polarities across the memory call may allow such a write operation to be completed in a shorter time than a write operation having a voltage of a single polarity.
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公开(公告)号:US10354729B1
公开(公告)日:2019-07-16
申请号:US15857188
申请日:2017-12-28
Applicant: Micron Technology, Inc.
Inventor: Hongmei Wang , Luca Crespi , Debayan Mahalanabis , Fabio Pellizzer
IPC: G11C13/00
Abstract: Methods, systems, and devices for polarity-conditioned memory cell write operations are described. A memory cell may be written with a logic state by performing a write operation that includes applying a first write voltage across the memory cell with a first polarity, and applying a second write voltage across the memory cell after applying the first write voltage of the write operation, the second write voltage of the write operation having a second polarity that is different than the first polarity. In some examples, performing a write operation on a memory cell having different voltage polarities across the memory call may allow such a write operation to be completed in a shorter time than a write operation having a voltage of a single polarity.
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