公开(公告)号：US11636911B2

公开(公告)日：2023-04-25

申请号：US17387290

申请日：2021-07-28

Applicant: Micron Technology, Inc.

Inventor： Amitava Majumdar ,  Radhakrishna Kotti ,  Patrick Daniel White ,  Pavan Reddy K Aella ,  Rajesh Kamana

IPC: G11C29/38 ,  G11C5/06 ,  G11C29/44 ,  H01L21/66 ,  H04B17/354 ,  H04B1/525 ,  G06F3/06

Abstract: Methods, systems, and devices for leakage source detection are described. In some cases, a testing device may scan a first set of access lines of a memory die that have a first length and a second set of access lines of the memory die that have a second length different than the first length. The testing device may determine a first error rate associated with the first set of access lines and a second error rate associated with the second set of access lines. The testing device may categorize a performance of the memory die based on the first and second error rates. In some cases, the testing device may determine a third error rate associated with a type of error based on the first and second error rates and may categorize the performance of the memory die based on the third error rate.

公开(公告)号：US11081203B2

公开(公告)日：2021-08-03

申请号：US16684533

申请日：2019-11-14

Applicant: Micron Technology, Inc.

Inventor： Amitava Majumdar ,  Radhakrishna Kotti ,  Patrick Daniel White ,  Pavan Reddy K Aella ,  Rajesh Kamana

IPC: G11C29/38 ,  H01L21/66 ,  G11C29/44 ,  H04B17/354 ,  H04B1/525 ,  G11C5/06 ,  G06F3/06

Abstract: Methods, systems, and devices for leakage source detection are described. In some cases, a testing device may scan a first set of access lines of a memory die that have a first length and a second set of access lines of the memory die that have a second length different than the first length. The testing device may determine a first error rate associated with the first set of access lines and a second error rate associated with the second set of access lines. The testing device may categorize a performance of the memory die based on the first and second error rates. In some cases, the testing device may determine a third error rate associated with a type of error based on the first and second error rates and may categorize the performance of the memory die based on the third error rate.