公开(公告)号：US20210125919A1

公开(公告)日：2021-04-29

申请号：US16663683

申请日：2019-10-25

Applicant: Micron Technology, Inc.

Inventor： Vladimir Machkaoutsan ,  Pieter Blomme ,  Emilio Camerlenghi ,  Justin B. Dorhout ,  Jian Li ,  Ryan L. Meyer ,  Paolo Tessariol

IPC: H01L23/522 ,  H01L23/528 ,  H01L27/11524 ,  H01L27/11556 ,  H01L27/1157 ,  H01L27/11582

Abstract: A memory array comprising strings of memory cells comprises laterally-spaced memory blocks individually comprising a vertical stack comprising alternating insulative tiers and conductive tiers. Operative channel-material strings of memory cells extend through the insulative tiers and the conductive tiers. First dummy pillars in the memory blocks extend through at least a majority of the insulative tiers and the conductive tiers through which the channel-material strings extend. Second dummy pillars are laterally-between and longitudinally-spaced-along immediately-laterally-adjacent of the memory blocks. The second dummy pillars extend through at least a majority of the insulative tiers and the conductive tiers through which the operative channel-material strings extend laterally-between the immediately-laterally-adjacent memory blocks. Other embodiments, including method, are disclosed.

公开(公告)号：US20210343640A1

公开(公告)日：2021-11-04

申请号：US17374634

申请日：2021-07-13

Applicant: Micron Technology, Inc.

Inventor： Vladimir Machkaoutsan ,  Pieter Blomme ,  Emilio Camerlenghi ,  Justin B. Dorhout ,  Jian Li ,  Ryan L. Meyer ,  Paolo Tessariol

IPC: H01L23/522 ,  H01L23/528 ,  H01L27/11582 ,  H01L27/11556 ,  H01L27/1157 ,  H01L27/11524 ,  H01L21/311

Abstract: A memory array comprising strings of memory cells comprises laterally-spaced memory blocks individually comprising a vertical stack comprising alternating insulative tiers and conductive tiers. Operative channel-material strings of memory cells extend through the insulative tiers and the conductive tiers. First dummy pillars in the memory blocks extend through at least a majority of the insulative tiers and the conductive tiers through which the channel-material strings extend. Second dummy pillars are laterally-between and longitudinally-spaced-along immediately-laterally-adjacent of the memory blocks. The second dummy pillars extend through at least a majority of the insulative tiers and the conductive tiers through which the operative channel-material strings extend laterally-between the immediately-laterally-adjacent memory blocks. Other embodiments, including method, are disclosed.

公开(公告)号：US11094627B2

公开(公告)日：2021-08-17

申请号：US16663683

申请日：2019-10-25

Applicant: Micron Technology, Inc.

Inventor： Vladimir Machkaoutsan ,  Pieter Blomme ,  Emilio Camerlenghi ,  Justin B. Dorhout ,  Jian Li ,  Ryan L. Meyer ,  Paolo Tessariol

IPC: H01L27/11582 ,  H01L27/11556 ,  H01L27/1157 ,  H01L27/11524 ,  H01L21/311 ,  H01L23/522 ,  H01L23/528

Abstract: A memory array comprising strings of memory cells comprises laterally-spaced memory blocks individually comprising a vertical stack comprising alternating insulative tiers and conductive tiers. Operative channel-material strings of memory cells extend through the insulative tiers and the conductive tiers. First dummy pillars in the memory blocks extend through at least a majority of the insulative tiers and the conductive tiers through which the channel-material strings extend. Second dummy pillars are laterally-between and longitudinally-spaced-along immediately-laterally-adjacent of the memory blocks. The second dummy pillars extend through at least a majority of the insulative tiers and the conductive tiers through which the operative channel-material strings extend laterally-between the immediately-laterally-adjacent memory blocks. Other embodiments, including method, are disclosed.