SLC PAGE READ
    1.
    发明申请
    SLC PAGE READ 审中-公开

    公开(公告)号:US20190130983A1

    公开(公告)日:2019-05-02

    申请号:US15799655

    申请日:2017-10-31

    Abstract: NAND memory devices, are described that utilize higher read-margin cell types to provide a more granular read disturb indicator without utilizing dummy cells. For example, a NAND architecture may have some cells that are configured as SLC or MLC cells. SLC or MLC cells have more read disturb margin—that is these cells can withstand more read disturb current leakage into the cell before a bit error occurs than TLC or QLC cells. These higher margin cells may serve as the read disturb indicator for a group of cells that have a comparatively lower read disturb margin. Since there are more pages of these higher margin cells than there are pages of dummy cells, these indicators may serve a smaller group of pages than the dummy pages. This reduces the time needed to complete a read disturb scan as fewer pages need to be scanned.

    SLC page read
    2.
    发明授权

    公开(公告)号:US10755793B2

    公开(公告)日:2020-08-25

    申请号:US15799655

    申请日:2017-10-31

    Abstract: NAND memory devices are described that utilize higher read-margin cell types to provide a more granular read disturb indicator without utilizing dummy cells. For example, a NAND architecture may have some cells that are configured as SLC or MLC cells. SLC or MLC cells have more read disturb margin—that is these cells can withstand more read disturb current leakage into the cell before a bit error occurs than TLC or QLC cells. These higher margin cells may serve as the read disturb indicator for a group of cells that have a comparatively lower read disturb margin. Since there are more pages of these higher margin cells than there are pages of dummy cells, these indicators may serve a smaller group of pages than the dummy pages. This reduces the time needed to complete a read disturb scan as fewer pages need to be scanned.

Patent Agency Ranking