公开(公告)号：US20240046990A1

公开(公告)日：2024-02-08

申请号：US17817288

申请日：2022-08-03

Applicant: Micron Technology, Inc.

Inventor： Yu-Chung LIEN ,  Juane LI ,  Sead ZILDZIC, JR. ,  Zhenming ZHOU

IPC: G11C16/10 ,  G11C16/04 ,  G11C16/34

CPC classification number: G11C16/10 ,  G11C16/0483 ,  G11C16/3459

Abstract: Implementations described herein relate to a memory device with a fast write mode to mitigate power loss. In some implementations, the memory device may detect a condition associated with power supplied to the memory device. The memory device may detect one or more pending write operations to be performed to cause data to be written to memory cells of the memory device. The memory device may switch from a first voltage pattern, previously used by the memory device to write data to one or more memory cells of the memory device, to a second voltage pattern based on detecting the condition and based on detecting the one or more pending write operations. The memory device may perform at least one write operation, of the one or more pending write operations, using the second voltage pattern.