公开(公告)号：US11011521B2

公开(公告)日：2021-05-18

申请号：US16423684

申请日：2019-05-28

Applicant: Micron Technology, Inc.

Inventor： Sevim Korkmaz ,  Devesh Dadhich Shreeram ,  Srinivasan Balakrishnan ,  Dewali Ray ,  Sanjeev Sapra ,  Paul A. Paduano

IPC: H01L27/108 ,  H01L49/02

Abstract: Methods, apparatuses, and systems related to removing a hard mask are described. An example method includes patterning a silicon hard mask on a semiconductor structure having a first silicate material on a working surface. The method further includes forming a first nitride material on the first silicate material. The method further includes forming a second silicate material on the first nitride material. The method further includes forming a second nitride material on the second silicate material. The method further includes an opening through the semiconductor structure using the patterned hard mask to form a pillar support. The method further includes forming a silicon liner material on the semiconductor structure. The method further includes removing the silicon liner material using a wet etch process.

公开(公告)号：US20200381437A1

公开(公告)日：2020-12-03

申请号：US16423684

申请日：2019-05-28

Applicant: Micron Technology, Inc.

Inventor： Sevim Korkmaz ,  Devesh Dadhich Shreeram ,  Srinivasan Balakrishnan ,  Dewali Ray ,  Sanjeev Sapra ,  Paul A. Paduano

IPC: H01L27/108 ,  H01L49/02

Abstract: Methods, apparatuses, and systems related to removing a hard mask are described. An example method includes patterning a silicon hard mask on a semiconductor structure having a first silicate material on a working surface. The method further includes forming a first nitride material on the first silicate material. The method further includes forming a second silicate material on the first nitride material. The method further includes forming a second nitride material on the second silicate material. The method further includes an opening through the semiconductor structure using the patterned hard mask to form a pillar support. The method further includes forming a silicon liner material on the semiconductor structure. The method further includes removing the silicon liner material using a wet etch process.