公开(公告)号：US20230335582A1

公开(公告)日：2023-10-19

申请号：US17720122

申请日：2022-04-13

Applicant: Micron Technology, Inc.

Inventor： Shivani Srivastava ,  Toshihiko Miyashita ,  Dan Mihai Mocuta ,  Bingwu Liu ,  Stephen David Snyder

IPC: H01L29/06 ,  H01L29/78 ,  H01L27/088 ,  H01L29/66

CPC classification number: H01L29/0642 ,  H01L29/785 ,  H01L27/0886 ,  H01L29/66795

Abstract: Apparatus and methods are disclosed, including memory devices and systems. Example memory devices, systems and methods include semiconductor devices having two or more fins, the fins separated by one or more inter-fin trenches. An isolation structure is included adjacent to the two or more fins, the isolation structure having a depth greater than the inter-fin trench depth.