公开(公告)号：US10475810B2

公开(公告)日：2019-11-12

申请号：US16023124

申请日：2018-06-29

Applicant: Micron Technology, Inc.

Inventor： Sudip Bandyopadhyay ,  Keen Wah Chow ,  Devesh Kumar Datta ,  Anurag Jindal ,  David Ross Economy ,  John Mark Meldrim

IPC: H01L27/11582 ,  H01L27/11556 ,  H01L27/11524 ,  H01L23/528 ,  H01L23/532

Abstract: Some embodiments include a memory assembly having memory cells proximate a conductive source. Channel material extends along the memory cells and is electrically coupled with the conductive source. The conductive source is over an insulative material and includes an adhesion material directly against the insulative material. The adhesion material comprises one or more of metal, silicon nitride, silicon oxynitride, silicon carbide, metal silicide, metal carbide, metal oxide, metal oxynitride and metal nitride. The conductive source includes metal-containing material over and directly against the adhesion material. The metal-containing material consists essentially of metal. The conductive source includes a metal-and-nitrogen-containing material over and directly against the metal-containing material, and includes a conductively-doped semiconductor material over the metal-and-nitrogen-containing material.

公开(公告)号：US20180308861A1

公开(公告)日：2018-10-25

申请号：US16023124

申请日：2018-06-29

Applicant: Micron Technology, Inc.

Inventor： Sudip Bandyopadhyay ,  Keen Wah Chow ,  Devesh Kumar Datta ,  Anurag Jindal ,  David Ross Economy ,  John Mark Meldrim

IPC: H01L27/11582 ,  H01L23/532 ,  H01L27/11524 ,  H01L27/11556 ,  H01L23/528

Abstract: Some embodiments include a memory assembly having memory cells proximate a conductive source. Channel material extends along the memory cells and is electrically coupled with the conductive source. The conductive source is over an insulative material and includes an adhesion material directly against the insulative material. The adhesion material comprises one or more of metal, silicon nitride, silicon oxynitride, silicon carbide, metal silicide, metal carbide, metal oxide, metal oxynitride and metal nitride. The conductive source includes metal-containing material over and directly against the adhesion material. The metal-containing material consists essentially of metal. The conductive source includes a metal-and-nitrogen-containing material over and directly against the metal-containing material, and includes a conductively-doped semiconductor material over the metal-and-nitrogen-containing material.

公开(公告)号：US10014319B1

公开(公告)日：2018-07-03

申请号：US15679499

申请日：2017-08-17

Applicant: Micron Technology, Inc.

Inventor： Sudip Bandyopadhyay ,  Keen Wah Chow ,  Devesh Kumar Datta ,  Anurag Jindal ,  David Ross Economy ,  John Mark Meldrim

IPC: H01L27/11582 ,  H01L23/532 ,  H01L27/11556 ,  H01L23/528

CPC classification number: H01L27/11582 ,  H01L23/528 ,  H01L23/53266 ,  H01L27/11524 ,  H01L27/11556

Abstract: Some embodiments include a memory assembly having memory cells proximate a conductive source. Channel material extends along the memory cells and is electrically coupled with the conductive source. The conductive source is over an insulative material and includes an adhesion material directly against the insulative material. The adhesion material comprises one or more of metal, silicon nitride, silicon oxynitride, silicon carbide, metal silicide, metal carbide, metal oxide, metal oxynitride and metal nitride. The conductive source includes metal-containing material over and directly against the adhesion material. The metal-containing material consists essentially of metal. The conductive source includes a metal-and-nitrogen-containing material over and directly against the metal-containing material, and includes a conductively-doped semiconductor material over the metal-and-nitrogen-containing material.

公开(公告)号：US09773807B1

公开(公告)日：2017-09-26

申请号：US15455859

申请日：2017-03-10

Applicant: Micron Technology, Inc.

Inventor： Sudip Bandyopadhyay ,  Keen Wah Chow ,  Devesh Kumar Datta ,  Anurag Jindal ,  David Ross Economy ,  John Mark Meldrim

IPC: H01L27/115 ,  H01L27/11582 ,  H01L27/11556 ,  H01L23/528 ,  H01L23/532

CPC classification number: H01L27/11582 ,  H01L23/528 ,  H01L23/53266 ,  H01L27/11524 ,  H01L27/11556

Abstract: Some embodiments include a memory assembly having memory cells proximate a conductive source. Channel material extends along the memory cells and is electrically coupled with the conductive source. The conductive source is over an insulative material and includes an adhesion material directly against the insulative material. The adhesion material comprises one or more of metal, silicon nitride, silicon oxynitride, silicon carbide, metal silicide, metal carbide, metal oxide, metal oxynitride and metal nitride. The conductive source includes metal-containing material over and directly against the adhesion material. The metal-containing material consists essentially of metal. The conductive source includes a metal-and-nitrogen-containing material over and directly against the metal-containing material, and includes a conductively-doped semiconductor material over the metal-and-nitrogen-containing material.