公开(公告)号：US20210091009A1

公开(公告)日：2021-03-25

申请号：US16579577

申请日：2019-09-23

Applicant: Micron Technology, Inc.

Inventor： Devesh Kumar Datta ,  David Daycock ,  Keen Wah Chow ,  Tom George ,  Justin B. Dorhout ,  Bingli Ma ,  Rita J. Klein ,  John Mark Meldrim

IPC: H01L23/532 ,  H01L23/522 ,  H01L23/528 ,  H01L27/11519 ,  H01L27/11524 ,  H01L27/11565 ,  H01L27/1157

Abstract: Some embodiments include a memory device having a conductive structure which includes silicon-containing material. A stack is over the conductive structure and includes alternating insulative levels and conductive levels. Channel material pillars extend through the stack and are electrically coupled with the conductive structure. Memory cells are along the channel material pillars. A conductive barrier material is under the silicon-containing material. The conductive barrier material includes one or more metals in combination with one or more nonmetals. An electrical contact is under the conductive barrier material. The electrical contact includes a region reactive with silicon. Silicon is precluded from reaching said region at least in part due to the conductive barrier material. Control circuitry is under the electrical contact and is electrically coupled with the conductive structure through at least the electrical contact and the conductive barrier material.

公开(公告)号：US10475810B2

公开(公告)日：2019-11-12

申请号：US16023124

申请日：2018-06-29

Applicant: Micron Technology, Inc.

Inventor： Sudip Bandyopadhyay ,  Keen Wah Chow ,  Devesh Kumar Datta ,  Anurag Jindal ,  David Ross Economy ,  John Mark Meldrim

IPC: H01L27/11582 ,  H01L27/11556 ,  H01L27/11524 ,  H01L23/528 ,  H01L23/532

Abstract: Some embodiments include a memory assembly having memory cells proximate a conductive source. Channel material extends along the memory cells and is electrically coupled with the conductive source. The conductive source is over an insulative material and includes an adhesion material directly against the insulative material. The adhesion material comprises one or more of metal, silicon nitride, silicon oxynitride, silicon carbide, metal silicide, metal carbide, metal oxide, metal oxynitride and metal nitride. The conductive source includes metal-containing material over and directly against the adhesion material. The metal-containing material consists essentially of metal. The conductive source includes a metal-and-nitrogen-containing material over and directly against the metal-containing material, and includes a conductively-doped semiconductor material over the metal-and-nitrogen-containing material.

公开(公告)号：US20180308861A1

公开(公告)日：2018-10-25

申请号：US16023124

申请日：2018-06-29

Applicant: Micron Technology, Inc.

Inventor： Sudip Bandyopadhyay ,  Keen Wah Chow ,  Devesh Kumar Datta ,  Anurag Jindal ,  David Ross Economy ,  John Mark Meldrim

IPC: H01L27/11582 ,  H01L23/532 ,  H01L27/11524 ,  H01L27/11556 ,  H01L23/528

Abstract: Some embodiments include a memory assembly having memory cells proximate a conductive source. Channel material extends along the memory cells and is electrically coupled with the conductive source. The conductive source is over an insulative material and includes an adhesion material directly against the insulative material. The adhesion material comprises one or more of metal, silicon nitride, silicon oxynitride, silicon carbide, metal silicide, metal carbide, metal oxide, metal oxynitride and metal nitride. The conductive source includes metal-containing material over and directly against the adhesion material. The metal-containing material consists essentially of metal. The conductive source includes a metal-and-nitrogen-containing material over and directly against the metal-containing material, and includes a conductively-doped semiconductor material over the metal-and-nitrogen-containing material.

公开(公告)号：US10014319B1

公开(公告)日：2018-07-03

申请号：US15679499

申请日：2017-08-17

Applicant: Micron Technology, Inc.

Inventor： Sudip Bandyopadhyay ,  Keen Wah Chow ,  Devesh Kumar Datta ,  Anurag Jindal ,  David Ross Economy ,  John Mark Meldrim

IPC: H01L27/11582 ,  H01L23/532 ,  H01L27/11556 ,  H01L23/528

CPC classification number: H01L27/11582 ,  H01L23/528 ,  H01L23/53266 ,  H01L27/11524 ,  H01L27/11556

Abstract: Some embodiments include a memory assembly having memory cells proximate a conductive source. Channel material extends along the memory cells and is electrically coupled with the conductive source. The conductive source is over an insulative material and includes an adhesion material directly against the insulative material. The adhesion material comprises one or more of metal, silicon nitride, silicon oxynitride, silicon carbide, metal silicide, metal carbide, metal oxide, metal oxynitride and metal nitride. The conductive source includes metal-containing material over and directly against the adhesion material. The metal-containing material consists essentially of metal. The conductive source includes a metal-and-nitrogen-containing material over and directly against the metal-containing material, and includes a conductively-doped semiconductor material over the metal-and-nitrogen-containing material.

公开(公告)号：US09773807B1

公开(公告)日：2017-09-26

申请号：US15455859

申请日：2017-03-10

Applicant: Micron Technology, Inc.

Inventor： Sudip Bandyopadhyay ,  Keen Wah Chow ,  Devesh Kumar Datta ,  Anurag Jindal ,  David Ross Economy ,  John Mark Meldrim

IPC: H01L27/115 ,  H01L27/11582 ,  H01L27/11556 ,  H01L23/528 ,  H01L23/532

CPC classification number: H01L27/11582 ,  H01L23/528 ,  H01L23/53266 ,  H01L27/11524 ,  H01L27/11556

Abstract: Some embodiments include a memory assembly having memory cells proximate a conductive source. Channel material extends along the memory cells and is electrically coupled with the conductive source. The conductive source is over an insulative material and includes an adhesion material directly against the insulative material. The adhesion material comprises one or more of metal, silicon nitride, silicon oxynitride, silicon carbide, metal silicide, metal carbide, metal oxide, metal oxynitride and metal nitride. The conductive source includes metal-containing material over and directly against the adhesion material. The metal-containing material consists essentially of metal. The conductive source includes a metal-and-nitrogen-containing material over and directly against the metal-containing material, and includes a conductively-doped semiconductor material over the metal-and-nitrogen-containing material.