公开(公告)号：US20130299868A1

公开(公告)日：2013-11-14

申请号：US13944399

申请日：2013-07-17

Applicant: Micron Technology, Inc.

Inventor： Owen Fay ,  Xiao Li ,  Josh Woodland ,  Shijian Luo ,  Jaspreet Gandhi ,  Te-Sung Wu

IPC: H01L33/62

CPC classification number: H01L33/62 ,  H01L24/29 ,  H01L24/83 ,  H01L24/94 ,  H01L33/0079 ,  H01L33/0095 ,  H01L2224/83193 ,  H01L2224/8381 ,  H01L2224/83825 ,  H01L2224/94 ,  H01L2924/01006 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01327 ,  H01L2924/14 ,  H01L2224/83 ,  H01L2924/00

Abstract: Methods of forming devices, including LED devices, are described. The devices may include fluorinated compound layers. The methods described may utilize a plasma treatment to form the fluorinated compound layers. The methods described may operate to produce an intermetallic layer that bonds two substrates such as semiconductor wafers together in a relatively efficient and inexpensive manner.

Abstract translation: 描述了包括LED器件在内的器件形成方法。 装置可以包括氟化化合物层。 所述的方法可以利用等离子体处理来形成氟化化合物层。 所描述的方法可以操作以产生金属间化合物层，其以相对有效和廉价的方式将诸如半导体晶片的两个基板结合在一起。