公开(公告)号：US09881858B2

公开(公告)日：2018-01-30

申请号：US14798261

申请日：2015-07-13

Applicant: Micron Technology, Inc.

Inventor： Jaspreet Gandhi ,  Dale Arnold

IPC: H05K1/11 ,  H01L23/498 ,  H01L21/48

CPC classification number: H01L23/49811 ,  H01L21/4846 ,  H01L21/4853 ,  H01L23/49894

Abstract: Apparatuses and methods for formation of a bond site including an opening with a discontinuous profile are disclosed herein. An example apparatus may at least include a substrate, a contact on the substrate, and a mask layer formed on the substrate and at least a portion of the contact. The mask layer may also include an opening formed therein, with the opening having a discontinuous profile from a top surface of the mask layer to the contact.

公开(公告)号：US20170018489A1

公开(公告)日：2017-01-19

申请号：US14798261

申请日：2015-07-13

Applicant: Micron Technology, Inc.

Inventor： Jaspreet Gandhi ,  Dale Arnold

IPC: H01L23/498 ,  H05K1/09 ,  H05K3/06 ,  H01L21/48

CPC classification number: H01L23/49811 ,  H01L21/4846 ,  H01L21/4853 ,  H01L23/49894

Abstract: Apparatuses and methods for formation of a bond site including an opening with a discontinuous profile are disclosed herein. An example apparatus may at least include a substrate, a contact on the substrate, and a mask layer formed on the substrate and at least a portion of the contact. The mask layer may also include an opening formed therein, with the opening having a discontinuous profile from a top surface of the mask layer to the contact.

Abstract translation: 本文公开了用于形成包括具有不连续轮廓的开口的键合位置的装置和方法。 一个示例性装置可以至少包括衬底，在衬底上的接触，以及形成在衬底上的掩模层和接触件的至少一部分。 掩模层还可以包括其中形成的开口，其中开口具有从掩模层的顶表面到触点的不连续的轮廓。

公开(公告)号：US20130299868A1

公开(公告)日：2013-11-14

申请号：US13944399

申请日：2013-07-17

Applicant: Micron Technology, Inc.

Inventor： Owen Fay ,  Xiao Li ,  Josh Woodland ,  Shijian Luo ,  Jaspreet Gandhi ,  Te-Sung Wu

IPC: H01L33/62

CPC classification number: H01L33/62 ,  H01L24/29 ,  H01L24/83 ,  H01L24/94 ,  H01L33/0079 ,  H01L33/0095 ,  H01L2224/83193 ,  H01L2224/8381 ,  H01L2224/83825 ,  H01L2224/94 ,  H01L2924/01006 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01327 ,  H01L2924/14 ,  H01L2224/83 ,  H01L2924/00

Abstract: Methods of forming devices, including LED devices, are described. The devices may include fluorinated compound layers. The methods described may utilize a plasma treatment to form the fluorinated compound layers. The methods described may operate to produce an intermetallic layer that bonds two substrates such as semiconductor wafers together in a relatively efficient and inexpensive manner.

Abstract translation: 描述了包括LED器件在内的器件形成方法。 装置可以包括氟化化合物层。 所述的方法可以利用等离子体处理来形成氟化化合物层。 所描述的方法可以操作以产生金属间化合物层，其以相对有效和廉价的方式将诸如半导体晶片的两个基板结合在一起。