公开(公告)号：US20140027913A1

公开(公告)日：2014-01-30

申请号：US14037633

申请日：2013-09-26

Applicant: Micron Technology, Inc.

Inventor： Terrence McDaniel ,  Sandra Tagg ,  Fred Fishburn

IPC: H01L23/48

CPC classification number: H01L23/48 ,  H01L21/02068 ,  H01L21/28052 ,  H01L21/2855 ,  H01L21/32134 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76895 ,  H01L21/76897 ,  H01L27/10888 ,  H01L27/10894 ,  H01L29/4933 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Semiconductor devices have conductive material lining a first opening in an insulative material and in contact with a metal silicide layer at the base of the opening overlying an active area within a silicon material and lining a second opening in the insulative material in direct contact with a polysilicon plug having substantially no metal silicide situated thereon.

Abstract translation: 半导体器件具有导电材料，其衬有绝缘材料中的第一开口，并且与位于开口底部的金属硅化物层接触，覆盖硅材料内的有源区域，并且在绝缘材料中衬里与多晶硅直接接触的第二开口 插塞基本上没有位于其上的金属硅化物。