公开(公告)号：US20140021437A1

公开(公告)日：2014-01-23

申请号：US14035232

申请日：2013-09-24

Applicant: Micron Technology, Inc.

Inventor： Eugene P Marsh ,  Timothy A Quick

IPC: H01L45/00

CPC classification number: H01L45/1608 ,  H01L27/101 ,  H01L27/2463 ,  H01L45/04 ,  H01L45/06 ,  H01L45/085 ,  H01L45/124 ,  H01L45/141 ,  H01L45/142 ,  H01L45/143 ,  H01L45/144 ,  H01L45/146 ,  H01L45/148 ,  H01L45/1616 ,  H01L45/1691

Abstract: Resistance variable memory cell structures and methods are described herein. One or more resistance variable memory cell structures include a first electrode common to a first and a second resistance variable memory cell, a first vertically oriented resistance variable material having an arcuate top surface in contact with a second electrode and a non-arcuate bottom surface in contact with the first electrode; and a second vertically oriented resistance variable material having an arcuate top surface in contact with a third electrode and a non-arcuate bottom surface in contact with the first electrode.

Abstract translation: 本文描述了电阻变量存储单元结构和方法。 一个或多个电阻可变存储单元结构包括与第一和第二电阻可变存储单元共用的第一电极，第一垂直取向的电阻变化材料，其具有与第二电极接触的弓形顶表面和非弧形底表面 与第一电极接触; 以及第二垂直取向的电阻变化材料，其具有与第三电极接触的弓形顶表面和与第一电极接触的非弧形底表面。