公开(公告)号：US11728813B2

公开(公告)日：2023-08-15

申请号：US17359982

申请日：2021-06-28

Applicant: Micron Technology, Inc.

Inventor： Timothy P Finkbeiner ,  Troy D. Larsen

IPC: H03K19/1776 ,  G06F3/06 ,  G11C16/26

CPC classification number: H03K19/1776 ,  G06F3/0625 ,  G06F3/0688 ,  G11C16/26

Abstract: An example apparatus includes a memory device comprising a plurality of banks of memory cells. A particular bank of memory cells among the plurality of banks includes a system processor resident on a particular bank of the plurality of banks.

公开(公告)号：US11050425B2

公开(公告)日：2021-06-29

申请号：US16553443

申请日：2019-08-28

Applicant: Micron Technology, Inc.

Inventor： Timothy P Finkbeiner ,  Troy D. Larsen

IPC: H03K19/1776 ,  G06F3/06 ,  G11C16/26

Abstract: An example apparatus includes a memory device comprising a plurality of banks of memory cells. A particular bank of memory cells among the plurality of banks includes a system processor resident on a particular bank of the plurality of banks.

公开(公告)号：US11175915B2

公开(公告)日：2021-11-16

申请号：US16156808

申请日：2018-10-10

Applicant: Micron Technology, Inc.

Inventor： Timothy P Finkbeiner ,  Troy D. Larsen

IPC: G06F9/30 ,  G06F12/02

Abstract: Systems and methods related to implementing vector registers in memory. A memory system for implementing vector registers in memory can include an array of memory cells, where a plurality of rows in the array serve as a plurality of vector registers as defined by an instruction set architecture. The memory system for implementing vector registers in memory can also include a processing resource configured to, responsive to receiving a command to perform a particular vector operation on a particular vector register, access a particular row of the array serving as the particular register to perform the vector operation.

公开(公告)号：US10483978B1

公开(公告)日：2019-11-19

申请号：US16161825

申请日：2018-10-16

Applicant: Micron Technology, Inc.

Inventor： Timothy P Finkbeiner ,  Troy D. Larsen

IPC: G11C16/26 ,  H03K19/177 ,  G06F3/06

Abstract: An example apparatus includes a memory device comprising a plurality of banks of memory cells. A particular bank of memory cells among the plurality of banks includes a system processor resident on a particular bank of the plurality of banks.

公开(公告)号：US20210328590A1

公开(公告)日：2021-10-21

申请号：US17359982

申请日：2021-06-28

Applicant: Micron Technology, Inc.

Inventor： Timothy P Finkbeiner ,  Troy D. Larsen

IPC: H03K19/1776 ,  G06F3/06 ,  G11C16/26

Abstract: An example apparatus includes a memory device comprising a plurality of banks of memory cells. A particular bank of memory cells among the plurality of banks includes a system processor resident on a particular bank of the plurality of banks.

公开(公告)号：US10581434B1

公开(公告)日：2020-03-03

申请号：US16432236

申请日：2019-06-05

Applicant: Micron Technology, Inc.

Inventor： Timothy P Finkbeiner ,  Troy D. Larsen

IPC: H03K19/177 ,  H03K19/1776 ,  G06F3/06 ,  G11C16/26

Abstract: An example apparatus includes a memory device comprising a plurality of banks of memory cells. A particular bank of memory cells among the plurality of banks includes a system processor resident on a particular bank of the plurality of banks.

公开(公告)号：US10536149B1

公开(公告)日：2020-01-14

申请号：US16432236

申请日：2019-06-05

Applicant: Micron Technology, Inc.

Inventor： Timothy P Finkbeiner ,  Troy D. Larsen

IPC: H03K19/177 ,  G06F3/06 ,  G11C16/26

Abstract: An example apparatus includes a memory device comprising a plurality of banks of memory cells. A particular bank of memory cells among the plurality of banks includes a system processor resident on a particular bank of the plurality of banks.