公开(公告)号：US20240215268A1

公开(公告)日：2024-06-27

申请号：US18391122

申请日：2023-12-20

Applicant: Micron Technology, Inc.

Inventor： Zhao Zhao ,  Trevor J. Plaisted ,  Stephen W. Russell ,  Farrell M. Good ,  Sangeetha P. Komanduri ,  Sandra L. Tagg ,  Nathan A. Wilkerson

IPC: H10B63/00 ,  H10B63/10

CPC classification number: H10B63/845 ,  H10B63/10

Abstract: Methods, systems, and devices for a single plug flow for a memory device are described. In some examples, the memory device may include one or more plugs formed above respective bit line plates. The plugs may include a liner and one or more sacrificial materials that are removed during a subsequent etching operation. Accordingly, pillars may be formed above the plugs, and may be generally aligned with the respective bit line plates.