公开(公告)号：US20240215268A1

公开(公告)日：2024-06-27

申请号：US18391122

申请日：2023-12-20

Applicant: Micron Technology, Inc.

Inventor： Zhao Zhao ,  Trevor J. Plaisted ,  Stephen W. Russell ,  Farrell M. Good ,  Sangeetha P. Komanduri ,  Sandra L. Tagg ,  Nathan A. Wilkerson

IPC: H10B63/00 ,  H10B63/10

CPC classification number: H10B63/845 ,  H10B63/10

Abstract: Methods, systems, and devices for a single plug flow for a memory device are described. In some examples, the memory device may include one or more plugs formed above respective bit line plates. The plugs may include a liner and one or more sacrificial materials that are removed during a subsequent etching operation. Accordingly, pillars may be formed above the plugs, and may be generally aligned with the respective bit line plates.

公开(公告)号：US20230395525A1

公开(公告)日：2023-12-07

申请号：US17805009

申请日：2022-06-01

Applicant: Micron Technology, Inc.

Inventor： Yiping Wang ,  Sandra L. Tagg

IPC: H01L23/00 ,  H01L23/535 ,  H01L27/11556 ,  H01L27/11582

CPC classification number: H01L23/562 ,  H01L23/535 ,  H01L27/11556 ,  H01L27/11582

Abstract: Methods of forming a microelectronic device includes forming a preliminary stack structure including blocks separated by slots, each block including: tiers each including insulative material and sacrificial material; and live contact openings and support contact openings extending completely through the tiers. A first liner and a second liner are formed over surfaces of the preliminary stack structure. Portions of the second liner and the first liner within the support contact openings are removed without removing additional portions of the second liner and the first liner within the slots and the live contact openings. Fill material is formed within the slots, the live contact openings, and the support contact openings to form sacrificial slot structures, sacrificial contact structures, and support contact structures. The sacrificial contact structures are replaced with conductive contact structures. The sacrificial slot structures are removed, and the sacrificial material of the tiers is replaced with conductive material.