公开(公告)号：US12255128B2

公开(公告)日：2025-03-18

申请号：US17676037

申请日：2022-02-18

Applicant: Micron Technology, Inc.

Inventor： Aibin Yu ,  Yee Chon Chin

IPC: H01L23/498 ,  H01L21/48 ,  H01L21/56 ,  H01L23/31 ,  H01L25/00 ,  H01L25/065 ,  H01L23/00

Abstract: A semiconductor device assembly is provided. The semiconductor device assembly includes a package substrate and a silicon spacer disposed on an upper surface of the substrate, the silicon spacer having a plurality of trenches extending into the silicon spacer from a top surface thereof. The semiconductor device assembly further includes one or more semiconductor devices disposed over the silicon spacer. Moreover, the semiconductor device assembly includes an encapsulant material at least partially encapsulating the one or more semiconductor devices and the package substrate, the encapsulant material at least partially filling the plurality of trenches of the silicon spacer.

公开(公告)号：US20230268263A1

公开(公告)日：2023-08-24

申请号：US17676037

申请日：2022-02-18

Applicant: Micron Technology, Inc.

Inventor： Aibin Yu ,  Yee Chon Chin

IPC: H01L23/498 ,  H01L21/56 ,  H01L25/065 ,  H01L23/31 ,  H01L21/48 ,  H01L25/00

CPC classification number: H01L23/49838 ,  H01L21/565 ,  H01L25/0652 ,  H01L23/3121 ,  H01L23/3142 ,  H01L21/4857 ,  H01L25/50 ,  H01L2224/48225 ,  H01L24/48

Abstract: A semiconductor device assembly is provided. The semiconductor device assembly includes a package substrate and a silicon spacer disposed on an upper surface of the substrate, the silicon spacer having a plurality of trenches extending into the silicon spacer from a top surface thereof. The semiconductor device assembly further includes one or more semiconductor devices disposed over the silicon spacer. Moreover, the semiconductor device assembly includes an encapsulant material at least partially encapsulating the one or more semiconductor devices and the package substrate, the encapsulant material at least partially filling the plurality of trenches of the silicon spacer.