公开(公告)号：US20030153155A1

公开(公告)日：2003-08-14

申请号：US10073723

申请日：2002-02-11

Applicant: Micron Technology Inc.

Inventor： Zhongze Wang ,  Chih-Chen Cho ,  Er-Xuan Ping

IPC: H01L021/8238 ,  H01L021/336

CPC classification number: H01L29/66651 ,  H01L21/76264 ,  H01L29/0653

Abstract: Field-effect transistors, and methods of their fabrication, having channel regions formed separately from their source/drain regions and having monocrystalline material interposed between the channel regions and the source/drain regions. The monocrystalline material includes monocrystalline silicon and silicon-germanium alloy.

Abstract translation: 场效应晶体管及其制造方法具有与其源/漏区分开形成的沟道区，并且具有介于沟道区和源/漏区之间的单晶材料。 单晶材料包括单晶硅和硅 - 锗合金。

公开(公告)号：US20040229414A1

公开(公告)日：2004-11-18

申请号：US10758059

申请日：2004-01-15

Applicant: Micron Technology, Inc.

Inventor： Zhongze Wang ,  Chih-Chen Cho ,  Er-Xuan Ping

IPC: H01L021/00

CPC classification number: H01L29/66651 ,  H01L21/76264 ,  H01L29/0653

Abstract: A field-effect transistor has a channel region in a bulk semiconductor substrate, a first source/drain region on a first side of the channel region, a second source/drain region on a second side of the channel region, and an extension of epitaxial monocrystalline material formed on the bulk semiconductor substrate so as to extend away from each side of the channel region.

Abstract translation: 场效应晶体管具有体半导体衬底中的沟道区，沟道区的第一侧上的第一源极/漏极区，沟道区的第二侧上的第二源极/漏极区和外延的延伸 形成在体半导体衬底上以便从沟道区的每一侧延伸的单晶材料。