公开(公告)号：US07470593B2

公开(公告)日：2008-12-30

申请号：US11150026

申请日：2005-06-10

申请人： Kyoung Bong Rouh ,  Seung Woo Jin ,  Min Young Lee

发明人： Kyoung Bong Rouh ,  Seung Woo Jin ,  Min Young Lee

IPC分类号： H01L21/336

CPC分类号： H01L29/66575 ,  H01L27/10873 ,  H01L29/66492

摘要： Disclosed is a method for manufacturing a cell transistor of a semiconductor memory device. The method comprises the steps of: forming device isolation films and a well on a semiconductor substrate; forming a threshold voltage adjust region by ion-implanting a first conductive impurity dopant into the well of the semiconductor substrate; performing a first thermal annealing on the semiconductor substrate where the threshold voltage adjust region is formed; forming a gate insulating film and gate electrodes on top of the semiconductor substrate between the device isolation films; forming a halo ion implantation region by ion-implanting a first conductive impurity dopant into the semiconductor substrate corresponding to a drain region exposed by the gate electrodes; performing a second thermal annealing on the semiconductor substrate where the halo ion implantation region is formed; and forming source/drain regions by ion-implanting a second conductive impurity dopant into the semiconductor substrate exposed by the gate electrodes. This method can reduce the turn-off leakage current of the cell transistor since the dopant dose of the threshold voltage adjust region can be reduced while maintaining the threshold voltage by increasing the dopant diffusion of the threshold voltage adjust region.

摘要翻译： 公开了半导体存储器件的单元晶体管的制造方法。 该方法包括以下步骤：在半导体衬底上形成器件隔离膜和阱; 通过将第一导电杂质掺杂剂离子注入到所述半导体衬底的阱中来形成阈值电压调整区域; 在形成有阈值电压调整区域的半导体衬底上进行第一热退火; 在半导体衬底的顶部在器件隔离膜之间形成栅极绝缘膜和栅电极; 通过将第一导电杂质掺杂剂离子注入对应于由栅电极暴露的漏区的半导体衬底中形成晕圈离子注入区; 在形成有所述卤素离子注入区域的所述半导体衬底上进行第二热退火; 以及通过将第二导电杂质掺杂剂离子注入到由所述栅电极暴露的所述半导体衬底中来形成源/漏区。 该方法可以减小单元晶体管的截止漏电流，因为阈值电压调整区域的掺杂剂剂量可以通过增加阈值电压调整区域的掺杂剂扩散来维持阈值电压而降低。

公开(公告)号：US20100112684A1

公开(公告)日：2010-05-06

申请号：US12594982

申请日：2008-04-08

申请人： Min Young Lee ,  Ho Jae Han

发明人： Min Young Lee ,  Ho Jae Han

IPC分类号： C12M1/22

CPC分类号： C12M21/06 ,  C12M23/10 ,  C12M25/06

摘要： The present invention relates to a cell culture dish for the erabryoid body formation from embryonic stem cells, which facilitates efficient and stable differentiation of embryonic stem cells by forming embryoid body in grooves on the bottom of a support adhered on the back of the lid for the culture dish by hanging drop culture.

摘要翻译： 本发明涉及一种用于从胚胎干细胞形成臼齿体的细胞培养皿，其通过在附着在盖背上的支撑体底部的凹槽中形成胚状体来促进胚胎干细胞的有效和稳定的分化 文化菜悬挂文化。

公开(公告)号：US07680504B2

公开(公告)日：2010-03-16

申请号：US11506863

申请日：2006-08-21

申请人： Min Young Lee

发明人： Min Young Lee

IPC分类号： H04W4/00

CPC分类号： H04L51/14 ,  H04L51/38 ,  H04W4/12

摘要： A method for transmitting a message including inputting, at a transmitting terminal, a message body and an activation condition indicating when the message body is to be activated on a receiving terminal, and transmitting message data to the receiving terminal. The message data includes the message body and the activation condition. Further, the activation condition is compared to a current status of the receiving terminal to determine when the message body is to be activated.

摘要翻译： 一种用于发送消息的方法，包括在发送终端处输入消息体，以及指示消息体将何时在接收终端被激活的激活条件，以及向接收终端发送消息数据。 消息数据包括消息体和激活条件。 此外，将激活条件与接收终端的当前状态进行比较，以确定消息体何时被激活。

公开(公告)号：US20090288689A1

公开(公告)日：2009-11-26

申请号：US12467532

申请日：2009-05-18

申请人： Kwon Taek Lim ,  Min Young Lee ,  Seung Ho Kim

发明人： Kwon Taek Lim ,  Min Young Lee ,  Seung Ho Kim

IPC分类号： B08B3/12

CPC分类号： B08B7/0021 ,  B08B3/12 ,  B08B5/023 ,  G03F7/423 ,  G03F7/428 ,  H01L21/31133 ,  H01L21/67051

摘要： Disclosed is an ultrasonic cleaning system for removing a high dose ion-implanted photoresist in supercritical carbon dioxide. Specifically, the ultrasonic cleaning system includes one or more ultrasonic horns mounted inside a high pressure reactor to be operated in supercritical carbon dioxide and having a cross-section enabling uniform processing of an overall surface of a wafer, so that ultrasonic waves can be superposed in the high pressure reactor and uniformly distributed over the surface of a support provided as a cleaning target in a cleaning bath, thereby minimizing damage to a fine pattern on the surface of the support while effectively removing a high dose ion-implanted photoresist.

摘要翻译： 公开了一种用于去除超临界二氧化碳中高剂量离子注入光刻胶的超声波清洗系统。 具体地说，超声波清洗系统包括一个或多个安装在高压反应器内部以在超临界二氧化碳中操作的超声波喇叭，并具有允许对晶片的整个表面进行均匀加工的横截面，从而超声波能叠加在 高压反应器并均匀地分布在作为清洁对象物的清洁目标的支撑体的表面上，从而最小化对支撑体表面上的精细图案的损害，同时有效地去除高剂量离子注入的光致抗蚀剂。