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    METHOD AND APPARATUS FOR ETCHING THE SILICON OXIDE LAYER OF A SEMICONDUCTOR SUBSTRATE
    3.
    发明申请
    METHOD AND APPARATUS FOR ETCHING THE SILICON OXIDE LAYER OF A SEMICONDUCTOR SUBSTRATE 有权
    用于蚀刻半导体衬底的氧化硅层的方法和装置

    公开(公告)号：US20120196445A1

    公开(公告)日：2012-08-02

    申请号：US13024782

    申请日：2011-02-10

    申请人： Kwon-Taek LIM

    发明人： Kwon-Taek LIM

    IPC分类号： H01L21/306

    CPC分类号： H01L21/31111 ,  B81C1/00928 ,  B81C2201/117

    摘要： An aspect of the invention is to provide a method and apparatus for etching the silicon oxide layer of a semiconductor substrate, whereby the processing time for cleaning or rinsing, as well as any undesired aftereffects by residual hydrofluoric acid, may be reduced, in using the dry etching method involving the use of dense carbon dioxide that contains hydrofluoric acid, during the manufacturing process of a micro-electronic device.

    摘要翻译： 本发明的一个方面是提供一种用于蚀刻半导体衬底的氧化硅层的方法和装置，从而可以减少用于清洗或冲洗的处理时间以及由残留的氢氟酸引起的任何不期望的后果， 在微电子器件的制造过程中涉及使用含有氢氟酸的致密二氧化碳的干蚀刻方法。

    METHOD AND SYSTEM FOR ETCHING A SILICON DIOXIDE FILM USING DENSIFIED CARBON DIOXIDE
    5.
    发明申请
    METHOD AND SYSTEM FOR ETCHING A SILICON DIOXIDE FILM USING DENSIFIED CARBON DIOXIDE 审中-公开
    使用二氧化碳浸渍二氧化硅薄膜的方法和系统

    公开(公告)号：US20110117752A1

    公开(公告)日：2011-05-19

    申请号：US12621140

    申请日：2009-11-18

    申请人： Kwon Taek Lim ,  Jae Hyeon Bae

    发明人： Kwon Taek Lim ,  Jae Hyeon Bae

    IPC分类号： H01L21/306

    CPC分类号： H01L21/31111 ,  H01L21/31116

    摘要： The present invention relates to a method and system for removing a sacrificial layer from an MEMS structure or from any other semiconductor substrate that includes a sacrificial layer. The above etching method and system use densified carbon dioxide, fluorine compounds, and co-solvents as the processing fluid and are capable of removing the sacrificial layer in a short period of time without incurring damage on the structural layer or incurring stiction between structures. In addition, the above etching method and system do not create etching residue and thus do not require a separate cleaning process.

    摘要翻译： 本发明涉及从MEMS结构或包括牺牲层的任何其它半导体衬底去除牺牲层的方法和系统。 上述蚀刻方法和系统使用致密化的二氧化碳，氟化合物和助溶剂作为处理流体，并且能够在短时间内去除牺牲层，而不会对结构层造成损害或引起结构之间的粘连。 此外，上述蚀刻方法和系统不产生蚀刻残留物，因此不需要单独的清洁工艺。

    ULTRASONIC CLEANING SYSTEM FOR REMOVING HIGH DOSE ION IMPLANTED PHOTORESIST IN SUPERCRITICAL CARBON DIOXIDE
    7.
    发明申请
    ULTRASONIC CLEANING SYSTEM FOR REMOVING HIGH DOSE ION IMPLANTED PHOTORESIST IN SUPERCRITICAL CARBON DIOXIDE 审中-公开
    超声波二氧化碳除去高剂量离子注入光电离子超声波清洗系统

    公开(公告)号：US20090288689A1

    公开(公告)日：2009-11-26

    申请号：US12467532

    申请日：2009-05-18

    申请人： Kwon Taek Lim ,  Min Young Lee ,  Seung Ho Kim

    发明人： Kwon Taek Lim ,  Min Young Lee ,  Seung Ho Kim

    IPC分类号： B08B3/12

    CPC分类号： B08B7/0021 ,  B08B3/12 ,  B08B5/023 ,  G03F7/423 ,  G03F7/428 ,  H01L21/31133 ,  H01L21/67051

    摘要： Disclosed is an ultrasonic cleaning system for removing a high dose ion-implanted photoresist in supercritical carbon dioxide. Specifically, the ultrasonic cleaning system includes one or more ultrasonic horns mounted inside a high pressure reactor to be operated in supercritical carbon dioxide and having a cross-section enabling uniform processing of an overall surface of a wafer, so that ultrasonic waves can be superposed in the high pressure reactor and uniformly distributed over the surface of a support provided as a cleaning target in a cleaning bath, thereby minimizing damage to a fine pattern on the surface of the support while effectively removing a high dose ion-implanted photoresist.

    摘要翻译： 公开了一种用于去除超临界二氧化碳中高剂量离子注入光刻胶的超声波清洗系统。 具体地说，超声波清洗系统包括一个或多个安装在高压反应器内部以在超临界二氧化碳中操作的超声波喇叭，并具有允许对晶片的整个表面进行均匀加工的横截面，从而超声波能叠加在 高压反应器并均匀地分布在作为清洁对象物的清洁目标的支撑体的表面上，从而最小化对支撑体表面上的精细图案的损害，同时有效地去除高剂量离子注入的光致抗蚀剂。

    Method and apparatus for etching the silicon oxide layer of a semiconductor substrate
    8.
    发明授权
    Method and apparatus for etching the silicon oxide layer of a semiconductor substrate 有权
    用于蚀刻半导体衬底的氧化硅层的方法和装置

    公开(公告)号：US08889563B2

    公开(公告)日：2014-11-18

    申请号：US13024782

    申请日：2011-02-10

    申请人： Kwon-Taek Lim

    发明人： Kwon-Taek Lim

    IPC分类号： H01L21/306 ,  B81C1/00 ,  H01L21/311

    CPC分类号： H01L21/31111 ,  B81C1/00928 ,  B81C2201/117

    摘要： An aspect of the invention is to provide a method and apparatus for etching the silicon oxide layer of a semiconductor substrate, whereby the processing time for cleaning or rinsing, as well as any undesired aftereffects by residual hydrofluoric acid, may be reduced, in using the dry etching method involving the use of dense carbon dioxide that contains hydrofluoric acid, during the manufacturing process of a micro-electronic device.

    摘要翻译： 本发明的一个方面是提供一种用于蚀刻半导体衬底的氧化硅层的方法和装置，从而可以减少用于清洗或冲洗的处理时间以及由残留的氢氟酸引起的任何不期望的后果， 在微电子器件的制造过程中涉及使用含有氢氟酸的致密二氧化碳的干蚀刻方法。