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    Method of producing porous silicon nitride ceramics having high strength and low thermal conductivity
    4.
    发明授权
    Method of producing porous silicon nitride ceramics having high strength and low thermal conductivity 失效
    制造高强度，低导热性的多孔氮化硅陶瓷的制造方法

    公开(公告)号：US5968426A

    公开(公告)日：1999-10-19

    申请号：US787019

    申请日：1997-01-29

    申请人： Kiyoshi Hirao ,  Manuel E. Brito ,  Motohiro Toriyama ,  Syuzo Kanzaki ,  Hisayuki Imamura ,  Takene Hirai ,  Yasuhiro Shigegaki

    发明人： Kiyoshi Hirao ,  Manuel E. Brito ,  Motohiro Toriyama ,  Syuzo Kanzaki ,  Hisayuki Imamura ,  Takene Hirai ,  Yasuhiro Shigegaki

    IPC分类号： F02B39/00 ,  C04B35/626 ,  C04B38/00 ,  C04B34/584

    CPC分类号： C04B38/00

    摘要： The present invention relates to a method for producing a porous silicon nitride sintered body having high strength and low thermal conductivity, which comprises of adding more than 10 volume % of rodlike beta-silicon nitride single crystals with a larger mean diameter than that of a silicon nitride raw powder into a mixture comprising the silicon nitride raw powder and a sintering additive, preparing a formed body with rodlike beta-silicon nitride single crystals oriented parallel to the casting plane according to a forming technique such as sheet casting and extrusion forming, sintering said formed body to develop elongated silicon nitride grains from the added rodlike beta-silicon nitride single crystals as nuclei and obtain the sintered body with the elongated grains being dispersed in a complicated state.

    摘要翻译： 本发明涉及一种具有高强度和低导热性的多孔氮化硅烧结体的制造方法，该方法包括加入大于10体积％的具有比硅的更大的平均直径的棒状β-氮化硅单晶 氮化物原料粉末混合成包含氮化硅原料粉末和烧结添加剂的混合物，根据成型技术如片材流延和挤出成型制备具有平行于铸造平面取向的棒状β-氮化硅单晶的成形体，烧结所述 从加成的棒状β-氮化硅单晶作为核形成长长的氮化硅晶粒，并获得具有细长晶粒的复合状态的烧结体。

    Porous silicon nitride with rodlike grains oriented
    5.
    发明授权
    Porous silicon nitride with rodlike grains oriented 失效
    多孔氮化硅，棒状晶粒取向

    公开(公告)号：US5935888A

    公开(公告)日：1999-08-10

    申请号：US848224

    申请日：1997-04-29

    申请人： Motohiro Toriyama ,  Kiyoshi Hirao ,  Manuel E. Brito ,  Syuzo Kanzaki ,  Yasuhiro Shigegaki

    发明人： Motohiro Toriyama ,  Kiyoshi Hirao ,  Manuel E. Brito ,  Syuzo Kanzaki ,  Yasuhiro Shigegaki

    IPC分类号： B28B3/02 ,  C04B30/02 ,  C04B35/622 ,  C04B35/626 ,  C04B35/64 ,  C04B38/00 ,  C04B35/584

    CPC分类号： C04B38/00 ,  C04B30/02 ,  C04B38/0051

    摘要： An object of the present invention is to provide a high-porosity, high-strength porous silicon nitride having great tolerance with respect to strain and stress, and a method for producing the same, and the present invention relates to a high-porosity, high-strength porous silicon nitride having great tolerance with respect to strain and stress, characterized in that rodlike grains of silicon nitride with a minor diameter of 0.5 to 10 .mu.m and an aspect ratio of 10 to 100 are oriented in a single direction, and the rest of the structure other than the rodlike grains consists solely of pores with a porosity of 5 to 30%, and further the above-mentioned porous silicon nitride is produced by mixing rodlike particles of silicon nitride with a minor diameter of 0.5 to 10 .mu.m and an aspect ratio of 10 to 100 as the silicon nitride with an auxiliary that serves to bind the rodlike particles, forming a tape in which the silicon nitride rodlike particles are oriented in a single direction by sheet forming, extrusion forming, or another such forming process, and sintering this product in a nitrogen atmosphere after lamination and degreasing of it.

    摘要翻译： 本发明的目的是提供一种相对于应变和应力具有很大公差的高孔隙率高强度多孔氮化硅及其制造方法，本发明涉及高孔隙率，高 - 相对于应变和应力具有很大公差的强度多孔氮化硅，其特征在于，小直径为0.5至10μm，长宽比为10至100的氮化硅棒状晶粒沿单一方向取向，并且 杆状颗粒以外的结构的其余部分仅由孔隙率为5〜30％的孔组成，进一步通过将氮化硅的棒状颗粒与0.5〜10μm的小直径混合而制成上述多孔氮化硅 长宽比为10〜100，作为氮化硅与辅助材料，用于粘合棒状颗粒，形成其中氮化硅棒状颗粒沿着单一方向取向的带 等等，形成，挤出成型或另一种这样的成型方法，并在层压和脱脂之后在氮气气氛中烧结该产品。