公开(公告)号：US20220090285A1

公开(公告)日：2022-03-24

申请号：US17477548

申请日：2021-09-17

Applicant: Ming Chi University of Technology

Inventor： Kun-Cheng PENG ,  Chi-Ting CHUNG ,  Chun-Ying LEE ,  Ruei-You LIOU ,  Yi-Xian LI

IPC: C25D5/50 ,  C25D3/32 ,  C25D3/54 ,  C25D5/10

Abstract: The present disclosure provides a manufacturing method of indium tin oxide, including: providing a first electrolyte including choline chloride, urea, indium chloride, boric acid, and ascorbic acid; disposing a workpiece, wherein at least a part of the workpiece is in contact with the first electrolyte; heating the first electrolyte to 60° C.-95° C.; applying a first operating current to electroplate indium onto the workpiece; providing an second electrolyte including choline chloride, urea, tin chloride, boric acid, and ascorbic acid; disposing the indium-coated workpiece, wherein at least a part of the workpiece is in contact with the second electroplate; heating the second electroplate to 60° C.-95° C.; applying a second operating current to electroplate tin onto the workpiece; and annealing the indium and tin on the workpiece to form indium tin oxide in an oxygen environment.

公开(公告)号：US20220090282A1

公开(公告)日：2022-03-24

申请号：US17465877

申请日：2021-09-03

Applicant: Ming Chi University of Technology

Inventor： Kun-Cheng PENG ,  Chun-Ying LEE ,  Chi-Ting CHUNG

IPC: C25D3/44

Abstract: The present disclosure provides a manufacturing method of aluminum nitride, including: providing an electrolyte including choline chloride, urea, aluminum chloride, boric acid, and ascorbic acid; disposing a workpiece, wherein at least a part of the workpiece is in contact with the electroplating solution; heating the electrolyte to within 60° C.-95° C.; applying an operating current to electroplate aluminum onto the workpiece; and annealing the aluminum on the workpiece to form aluminum nitride.