公开(公告)号：US06444566B1

公开(公告)日：2002-09-03

申请号：US09845481

申请日：2001-04-30

申请人： Ming Huan Tsai ,  Jyh Huei Chen ,  Chu Yun Fu ,  Hun Jan Tao

发明人： Ming Huan Tsai ,  Jyh Huei Chen ,  Chu Yun Fu ,  Hun Jan Tao

IPC分类号： H01L214763

CPC分类号： H01L21/76897 ,  H01L21/76802 ,  H01L21/76832 ,  H01L21/76834

摘要： Borderless contacts are used in integrated circuits in order to conserve chip real estate. As part of the process for manufacturing borderless contacts, an etch-stopping layer of silicon nitride is first laid over the area that is to be contacted. Investigation has now shown that this can lead to damage to the silicon at the edges of the via. The present invention eliminates this damage by introducing a buffer layer between the silicon surface and said sidon nitride layer. Suitable materials for the buffer layer that have been found to be infective include silicon oxide and silicon oxynitride with the latter offering some ditional advantages over the former. Experimental data confirming the effectiveness of the buffer layer are provided, together with a process for its manufacture.

摘要翻译： 无边界接触用于集成电路，以节省芯片的不动产。 作为制造无边界接触的工艺的一部分，首先将氮化硅的蚀刻停止层铺设在要接触的区域上。 现在调查显示，这可能导致在通孔边缘的硅损坏。 本发明通过在硅表面和所述侧氮化物层之间引入缓冲层来消除这种损害。 已经发现感染的缓冲层的合适材料包括氧化硅和氮氧化硅，后者提供了比前者更多的优点。 提供确认缓冲层有效性的实验数据及其制造方法。

公开(公告)号：US06630398B2

公开(公告)日：2003-10-07

申请号：US10213588

申请日：2002-08-07

申请人： Ming Huan Tsai ,  Jyh Huei Chen ,  Chu Yun Fu ,  Hun Jan Tao

发明人： Ming Huan Tsai ,  Jyh Huei Chen ,  Chu Yun Fu ,  Hun Jan Tao

IPC分类号： H01L214763

CPC分类号： H01L21/76897 ,  H01L21/76802 ,  H01L21/76832 ,  H01L21/76834

摘要： Borderless contacts are used in integrated circuits in order to conserve chip real estate. As part of the process for manufacturing borderless contacts, an etch-stopping layer of silicon nitride is first laid over the area that is to be contacted Investigation has now shown that this can lead to damage to the silicon at the edges of the via. The present invention eliminates this damage by introducing a buffer layer between the silicon surface and said silicon nitride layer. Suitable materials for the buffer layer that have been found to be effective include silicon oxide and silicon oxynitride with the latter offering some additional advantages over the former. Experimental data confirming the effectiveness of the buffer layer are provided, together with a process for its manufacture.