公开(公告)号：US20120104339A1

公开(公告)日：2012-05-03

申请号：US12913117

申请日：2010-10-27

申请人： Ming-Huei SHEN ,  Tsun Kai TSAO ,  Shih-Chang LIU ,  Chia-Shiung TSAI

发明人： Ming-Huei SHEN ,  Tsun Kai TSAO ,  Shih-Chang LIU ,  Chia-Shiung TSAI

IPC分类号： H01L45/00 ,  H01L21/02 ,  H01L21/10

CPC分类号： H01L45/1253 ,  H01L27/2463 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/144 ,  H01L45/148 ,  H01L45/1666

摘要： On a first structure having a first dielectric layer, a second dielectric layer, and a third dielectric layer a crown is formed through the third dielectric layer and the second dielectric layer. A fourth dielectric layer is deposited over the first structure and thereby is over the crown. A portion of the fourth dielectric layer is removed to form a first spacer having a remaining portion of the fourth dielectric layer. A portion of the third electric layer is also removed during the removal of the portion the fourth dielectric layer, resulting in a second spacer having a remaining portion of the third dielectric layer. A second structure is thereby formed. A phase change material layer is deposited over the second structure. An electrode layer is deposited over the phase change layer. Portions of the electrode layer and the phase change layer are removed by a chemical-mechanical-polishing process to form a phase change region having a remaining portion of the phase change layer and to form an electrode region having a remaining portion of the electrode layer.

摘要翻译： 在具有第一电介质层，第二电介质层和第三电介质层的第一结构上，通过第三电介质层和第二电介质层形成表冠。 在第一结构上沉积第四电介质层，从而在冠部上方。 去除第四电介质层的一部分以形成具有第四电介质层的剩余部分的第一间隔物。 在去除第四介电层的部分期间，第三电层的一部分也被去除，导致具有第三介电层的剩余部分的第二间隔物。 由此形成第二结构。 相变材料层沉积在第二结构上。 电极层沉积在相变层上。 通过化学机械抛光工艺除去电极层和相变层的一部分，形成具有相变层的剩余部分的相变区域，并形成具有电极层的剩余部分的电极区域。