HIGH-VOLTAGE AC LED STRUCTURE
    2.
    发明申请
    HIGH-VOLTAGE AC LED STRUCTURE 有权
    高压交流LED结构

    公开(公告)号:US20130127352A1

    公开(公告)日:2013-05-23

    申请号:US13407398

    申请日:2012-02-28

    IPC分类号: H05B37/00

    摘要: The present invention provides a high-voltage alternating current light-emitting diode (AC LED) structure. The high-voltage AC LED structure includes a circuit substrate and a plurality of AC LED chips. The AC LED chips each include an insulated substrate, an LED set, a first metal layer and a second metal layer. The AC LED chips manufactured by a wafer level process are coupled to the low-cost circuit substrate to produce the downsized high-voltage AC LED structure.

    摘要翻译: 本发明提供一种高压交流发光二极管(AC LED)结构。 高压AC LED结构包括电路基板和多个AC LED芯片。 AC LED芯片各自包括绝缘基板,LED组,第一金属层和第二金属层。 通过晶片级工艺制造的AC LED芯片耦合到低成本电路基板,以产生小型化的高压AC LED结构。

    HIGH-VOLTAGE AC LIGHT-EMITTING DIODE STRUCTURE
    3.
    发明申请
    HIGH-VOLTAGE AC LIGHT-EMITTING DIODE STRUCTURE 有权
    高电压交流发光二极管结构

    公开(公告)号:US20130126914A1

    公开(公告)日:2013-05-23

    申请号:US13407028

    申请日:2012-02-28

    IPC分类号: H01L27/15

    摘要: A high-voltage alternating current (AC) light-emitting diode (LED) structure is provided. The high-voltage AC LED structure includes a circuit substrate and a plurality of high-voltage LED (HV LED) chips. Each one of the HV LED chips includes a first substrate, an adhering layer, first ohmic contact layers, epi-layers, a first insulating layer, at least two first electrically conducting plates, at least two second electrically conducting plates, and a second substrate. The HV LED chips manufactured by a wafer-level process are coupled to the low-cost circuit substrate to produce the downsized high-voltage AC LED structure.

    摘要翻译: 提供了高压交流(AC)发光二极管(LED)结构。 高压AC LED结构包括电路基板和多个高压LED(HV LED)芯片。 每个HV LED芯片包括第一基板,粘合层,第一欧姆接触层,外延层,第一绝缘层,至少两个第一导电板,至少两个第二导电板和第二基板 。 通过晶片级工艺制造的HV LED芯片耦合到低成本电路基板以产生小型化的高压AC LED结构。