摘要:
A method for multi-threshold voltage CMOS process optimization. The method includes the steps of: providing a semiconductor substrate with a plurality of devices of different threshold voltages; establishing a plurality of types of timing models for a timing calculation; obtaining a static timing analysis report through the timing calculation; defining a large and a small setup time margin as a Tl and a Ts; changing the devices whose setup time margins are less than Ts to low threshold devices; changing the devices whose setup time margins are greater than Tl to high threshold devices; checking a setup time of each device; changing the devices whose setup time margin does not meet the enhanced static timing analysis report; performing a first pocket implant process for the normal threshold devices; performing a second pocket implant process for the low threshold devices and performing a third pocket implant process for the high threshold devices.
摘要:
Disclosed is an improved computer graphics memory architecture. The architecture includes an address translation table (ATT) and a buffer. The address translation table receives information about desired pixel data and determines the physical address of the desired data. The buffer is connected to the ATT and has a dual bank which stores the color value and the Z value of a 3-D pixel. A buffer addressing method is also provided in which the address of the desired pixel information and associated control circuits may be quickly determined through an appropriate data arrangement in the buffer and an address transfer table.
摘要:
An apparatus and method for controlling an asynchronous dual port FIFO memory is provided. The asynchronous FIFO may operate at frequencies satisfying 0.5f2