公开(公告)号：US20240274489A1

公开(公告)日：2024-08-15

申请号：US18566882

申请日：2022-06-14

Applicant: Mitsubishi Electric Corporation

Inventor： Haruna TADA ,  Masaki GOTO ,  Hodaka ROKUBUICHI ,  Hayato TERADA ,  Yasuyuki SANDA

IPC: H01L23/367 ,  H01L21/48 ,  H01L23/00 ,  H01L23/31 ,  H01L25/07 ,  H02M7/48

CPC classification number: H01L23/3672 ,  H01L21/4878 ,  H01L21/4882 ,  H01L23/3142 ,  H02M7/48 ,  H01L24/32 ,  H01L25/072 ,  H01L2224/32225 ,  H01L2924/1815

Abstract: A power semiconductor device includes a power module part and a heat sink. An uneven part is formed in a module base in the power module part. The uneven part includes a recess and a buffer recess. The buffer recess is formed in a direction that crosses a direction in which the recess extends. An uneven part is formed on a heat sink base part in the heat sink. The uneven part and the uneven part are fitted together by a crimping process to integrate the module base of the power module part and a heat radiation diffusion part of the heat sink. The buffer recess is left as a space.

公开(公告)号：US20240074122A1

公开(公告)日：2024-02-29

申请号：US18258037

申请日：2022-01-14

Applicant: Mitsubishi Electric Corporation

Inventor： Yasuyuki SANDA ,  Masaki GOTO ,  Hayato TERADA ,  Hodaka ROKUBUICHI ,  Haruna TADA

IPC: H05K7/20 ,  H01L21/48 ,  H01L21/56 ,  H01L23/31 ,  H01L23/367

CPC classification number: H05K7/209 ,  H01L21/4878 ,  H01L21/4882 ,  H01L21/565 ,  H01L23/3142 ,  H01L23/367 ,  H05K7/20418

Abstract: A power semiconductor device includes a power module unit and a heat sink. An uneven portion is formed in a module base in the power module unit. The uneven portion includes a depression portion and a buffer depression portion. An uneven portion is formed in a heat sink base unit in the heat sink. The uneven portion and the uneven portion are fitted together by crimping so that the module base of the power module unit and a heat dissipation spreader of the heat sink are integrated. The buffer depression portion is left as a space.