公开(公告)号：US20210066175A1

公开(公告)日：2021-03-04

申请号：US16844199

申请日：2020-04-09

Applicant: Mitsubishi Electric Corporation

Inventor： Satoshi KONDO ,  Hidetoshi ISHIBASHI ,  Hiroshi YOSHIDA ,  Nobuhiro ASAJI ,  Junji FUJINO ,  Yusuke ISHIYAMA ,  Hodaka ROKUBUICHI

IPC: H01L23/498 ,  H01L23/28 ,  H01L23/18 ,  H05K3/10 ,  H05K3/34 ,  H05K3/30 ,  H01L23/00

Abstract: A semiconductor module includes: an insulated circuit board; a semiconductor device mounted on the insulated circuit board; a printed wiring board arranged above the insulated circuit board and the semiconductor device and having a through-hole; a metal pile having a lower end bonded to an upper surface of the semiconductor device and a cylindrical portion penetrating through the through-hole and bonded to the printed wiring board; a case surrounding the insulated circuit board, the semiconductor device, the printed wiring board and the metal pile; and a sealing material sealing an inside of the case.

公开(公告)号：US20230070214A1

公开(公告)日：2023-03-09

申请号：US17795536

申请日：2020-03-13

Applicant: Mitsubishi Electric Corporation

Inventor： Hodaka ROKUBUICHI ,  Kei YAMAMOTO ,  Ken SAKAMOTO

IPC: H01L23/495 ,  H01L23/31 ,  H01L23/00

Abstract: A semiconductor device includes: a semiconductor element, a first lead frame, a second lead frame, and a thermally conductive member; and a sealing member sealing them. The first lead frame includes: a first portion exposed from a first side surface of the sealing member; and a second portion located closer to a lower surface of the sealing member than the first portion in a second direction crossing the lower surface. The semiconductor device further includes an intermediate frame which is located between the second portion and the fifth portion at least in the second direction. A distance, in the first direction, between the second portion and the intermediate frame is shorter than a distance, in the second direction, between an upper surface of the first portion and the upper surface of the second portion.

公开(公告)号：US20200020622A1

公开(公告)日：2020-01-16

申请号：US16489776

申请日：2017-12-06

Applicant: Mitsubishi Electric Corporation

Inventor： Yusuke KAJI ,  Hodaka ROKUBUICHI ,  Satoshi KONDO

IPC: H01L23/498 ,  H01L23/31 ,  H01L21/56 ,  H01L23/00 ,  H01L25/07 ,  H02M7/5387 ,  H02M7/00

Abstract: A semiconductor device includes an insulating substrate, a semiconductor element, a conductor substrate, and a case member. The semiconductor element is connected above the insulating substrate, and the conductor substrate is connected above the semiconductor element. The case member surrounds a region overlapping with the insulating substrate, the semiconductor element, and the conductor substrate in plan view to avoid the region. A plurality of metal patterns are arranged on a main surface of an insulating layer. A groove is formed between a pair of adjacent metal patterns of the plurality of metal patterns. A through hole is formed in the conductor substrate at a position overlapping with the groove in plan view.

公开(公告)号：US20220020672A1

公开(公告)日：2022-01-20

申请号：US17294685

申请日：2019-02-01

Applicant: Mitsubishi Electric Corporation

Inventor： Kei YAMAMOTO ,  Hodaka ROKUBUICHI

IPC: H01L23/495 ,  H01L23/367 ,  H01L23/31

Abstract: A semiconductor device includes a heat sink, an insulating layer, a lead frame, a power semiconductor element, a sealing resin, and fins. The heat sink has a first main surface and a second main surface opposed to each other. A lead frame including a lead terminal is disposed on the first main surface of the heat sink with the insulating layer interposed. The power semiconductor element is mounted on the lead frame. The sealing resin is formed to cover an inside region located inside of an outer peripheral region located around the entire periphery along the outer periphery of the first main surface of the heat sink. A first depression is formed along the sealing resin in the outer peripheral region of the first main surface.

公开(公告)号：US20200176361A1

公开(公告)日：2020-06-04

申请号：US16623402

申请日：2018-01-23

Applicant: Mitsubishi Electric Corporation

Inventor： Hodaka ROKUBUICHI ,  Kuniyuki SATO ,  Kiyofumi KITAI ,  Yasuyuki SANDA

IPC: H01L23/495 ,  H01L23/31 ,  H01L21/56

Abstract: A semiconductor device and a semiconductor module which can be reduced in size while ensuing insulation are provided. In the semiconductor device, a lead frame on which a circuit pattern is formed is provided on an insulation substrate; the circuit pattern of the lead frame is joined to the back-side electrode of a semiconductor chip via a solder layer, and the lead frame is electrically connected with the top-side electrode of the semiconductor chip via a wire; the lead frame 1 includes a terminal inside a mold-sealing resin and a terminal exposed to a space outside the mold-sealing resin, and the terminal is connected to a terminal block via a solder layer; and the lead frame, the insulation substrate, the semiconductor chip and the terminal block are integrally molded and sealed by the mold-sealing resin.

公开(公告)号：US20180261520A1

公开(公告)日：2018-09-13

申请号：US15758381

申请日：2016-09-20

Applicant: Mitsubishi Electric Corporation

Inventor： Kei YAMAMOTO ,  Hodaka ROKUBUICHI ,  Dai NAKAJIMA ,  Kiyofumi KITAI ,  Yoichi GOTO

IPC: H01L23/367 ,  H01L23/00 ,  H01L23/31 ,  H01L23/373 ,  H01L21/48 ,  H01L21/56 ,  H01L25/00 ,  H01L25/07

CPC classification number: H01L23/3672 ,  H01L21/4882 ,  H01L21/56 ,  H01L21/565 ,  H01L23/3121 ,  H01L23/3735 ,  H01L23/3736 ,  H01L23/4334 ,  H01L24/32 ,  H01L24/48 ,  H01L24/73 ,  H01L24/83 ,  H01L25/072 ,  H01L25/50 ,  H01L2224/32245 ,  H01L2224/48245 ,  H01L2224/73265 ,  H01L2924/1203 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/3511 ,  H01L2924/3512 ,  H01L2924/00012

Abstract: A semiconductor device that reduces the deformation of a metal base due to pressure during transfer molding, to thereby suppress the occurrence of cracks in an insulating layer to achieve high electrical reliability. The semiconductor device includes: a metal member provided, on its lower surface, with a projection and a depression, and a projecting peripheral portion surrounding the projection and the depression and having a height greater than or equal to a height of the projection of the projection and the depression; an insulating layer formed on an upper surface of the metal member; a metal layer formed on an upper surface of the insulating layer; a semiconductor element joined to an upper surface of the metal layer; and a sealing resin to seal the semiconductor element, the metal layer, the insulating layer and the metal member.

公开(公告)号：US20240222233A1

公开(公告)日：2024-07-04

申请号：US18288999

申请日：2021-05-11

Applicant: Mitsubishi Electric Corporation

Inventor： Hodaka ROKUBUICHI ,  Yasuyuki SANDA ,  Kei YAMAMOTO

IPC: H01L23/495 ,  H01L23/31 ,  H01L23/32

CPC classification number: H01L23/49562 ,  H01L23/3121 ,  H01L23/32 ,  H01L23/49531

Abstract: A semiconductor device (100) includes a lead frame (20) having a mount surface (20a), a semiconductor element (30) disposed on the mount surface, a circuit board (50) disposed apart from the mount surface in a thickness direction of the semiconductor device and electrically connected to the lead frame, a sealing resin (70) that seals the lead frame, the semiconductor element, and the circuit board, and a connector (80). The lead frame has a lead (22) exposed from the sealing resin. The circuit board has at least one exposed portion (52) exposed from the sealing resin. A connector is electrically connected to one of the at least one exposed portion.

公开(公告)号：US20240072026A1

公开(公告)日：2024-02-29

申请号：US18271849

申请日：2021-01-15

Applicant: Mitsubishi Electric Corporation

Inventor： Kazutake KADOWAKI ,  Kozo HARADA ,  Hodaka ROKUBUICHI

IPC: H01L25/16 ,  H01L23/00 ,  H01L23/29 ,  H01L23/31 ,  H01L23/498

CPC classification number: H01L25/165 ,  H01L23/293 ,  H01L23/3142 ,  H01L23/49811 ,  H01L24/32 ,  H01L24/48 ,  H01L24/73 ,  H01L2224/32245 ,  H01L2224/48249 ,  H01L2224/73265 ,  H01L2924/13091

Abstract: A semiconductor device according to the present disclosure includes: a semiconductor element; a plurality of conductive members each electrically connected to the semiconductor element and each extending upward; a sealing resin to seal the semiconductor element and the conductive member and to form a protrusion that covers a perimeter of a tip portion of each of the plurality of conductive members; a control substrate provided with a through hole into which the protrusion is inserted, the control substrate having a control electrode; and a flexible wiring to connect the control electrode and the tip portion of the conductive member to each other, the flexible wiring having flexibility. With such a configuration, a trouble due to external force or stress applied to the semiconductor device or the semiconductor package can be prevented and the semiconductor device or the semiconductor package having an excellent durability can be obtained.

公开(公告)号：US20200335411A1

公开(公告)日：2020-10-22

申请号：US16960756

申请日：2018-12-03

Applicant: Mitsubishi Electric Corporation

Inventor： Hodaka ROKUBUICHI ,  Seiki HIRAMATSU ,  Shota MORISAKI ,  Shinya YANO

IPC: H01L23/31 ,  H01L23/495 ,  H01L23/498 ,  H01L25/07 ,  H01L25/18 ,  H01L23/00 ,  H02M7/5387

Abstract: A semiconductor device includes: a circuit member including a planar portion; a terminal portion formed above the front surface of the planar portion of the circuit member and parallel to the planar portion; a semiconductor element which has an upper surface located below an upper surface of the terminal portion and is formed on the front surface of the planar portion of the circuit member; a resin layer arranged on the semiconductor element and having first openings through which the semiconductor element is exposed; a conductive layer arranged on the resin layer, including an upper surface located above the upper surface of the terminal portion, and joined to the semiconductor element through the first openings; and a sealing member including an upper surface parallel to the planar portion and integrally sealing the circuit member, the semiconductor element, the resin layer, the conductive layer, and part of the terminal portion.

公开(公告)号：US20240274489A1

公开(公告)日：2024-08-15

申请号：US18566882

申请日：2022-06-14

Applicant: Mitsubishi Electric Corporation

Inventor： Haruna TADA ,  Masaki GOTO ,  Hodaka ROKUBUICHI ,  Hayato TERADA ,  Yasuyuki SANDA

IPC: H01L23/367 ,  H01L21/48 ,  H01L23/00 ,  H01L23/31 ,  H01L25/07 ,  H02M7/48

CPC classification number: H01L23/3672 ,  H01L21/4878 ,  H01L21/4882 ,  H01L23/3142 ,  H02M7/48 ,  H01L24/32 ,  H01L25/072 ,  H01L2224/32225 ,  H01L2924/1815

Abstract: A power semiconductor device includes a power module part and a heat sink. An uneven part is formed in a module base in the power module part. The uneven part includes a recess and a buffer recess. The buffer recess is formed in a direction that crosses a direction in which the recess extends. An uneven part is formed on a heat sink base part in the heat sink. The uneven part and the uneven part are fitted together by a crimping process to integrate the module base of the power module part and a heat radiation diffusion part of the heat sink. The buffer recess is left as a space.