SEMICONDUCTOR LASER ELEMENT, METHOD FOR MANUFACTURING SAME, AND SEMICONDUCTOR LASER DEVICE

    公开(公告)号:US20220344893A1

    公开(公告)日:2022-10-27

    申请号:US17641164

    申请日:2019-12-04

    摘要: Provided here are: semiconductor layers comprised of an n-type cladding layer formed on a surface of an n-type GaAs substrate, active layers formed on surfaces of the n-type cladding layer, p-type cladding layers formed on surfaces of the active layers, and p-type contact layers formed on surfaces of the p-type cladding layers, the p-type cladding layers and the p-type contact layers being formed to have a ridges; insulating films covering surfaces of the semiconductor layers but having openings on surfaces of the p-type contact layer; and conductive layers connected to the p-type contact layers through the openings, the conductive layers being formed on surfaces of the insulating films to cover planar portions provided in the semiconductor layers adjacently to the ridges; wherein, together with the conductive layers, convex sidewalls are provided to be placed over portions of the planar portions at their sides nearer to the ridges.

    SEMICONDUCTOR LASER DEVICE
    2.
    发明申请

    公开(公告)号:US20220037851A1

    公开(公告)日:2022-02-03

    申请号:US17280360

    申请日:2019-01-10

    摘要: A semiconductor laser device is configured so that, on at least one of the respective opposing surfaces of a semiconductor laser chip and a sub-mount and the respective opposing surfaces of the sub-mount and a heatsink, one or more treatment regions are provided where adhesion of a bonding material or bonding material used for their bonding is reduced, wherein the one or more treatment regions are placed to define, in a traveling direction of light, different coverages depending on a position in an array direction of multiple light emitting regions.