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1.发明授权Semiconductor manufacturing device and method for manufacturing semiconductor devices 有权半导体制造装置及半导体装置的制造方法公开(公告)号：US08197638B2
公开(公告)日：2012-06-12
申请号：US10589490
申请日：2005-03-04
CPC分类号： H01L21/67103 , H01J37/32082 , H01J37/32532 , H01L21/67069 , H01L21/6833 , Y10T279/23
摘要： Wafer contamination is prevented, while preventing damage to a high-frequency electrode and a susceptor. A main body 41 of the susceptor 40 of an MMT apparatus is composed of a heater arranging plate 42, an electrode arranging plate 48, and a supporting plate 56 all made from quartz. A circular electrode arranging hole 49 with a fixed depth is concentrically formed on the upper surface of the electrode arranging plate 48, and quadrangular pillars 50 are formed protruding in a matrix on the bottom of the electrode arranging hole 49. Multiple insertion holes 52 are formed in a disk-shaped high-frequency electrode 51, and the high-frequency electrode 51 is installed in the electrode arranging hole 49 by inserting each pillar 50 into each insertion hole 52. The gaps Sa and Sb are provided between the high-frequency electrode 51 and the electrode arranging plate 48. The pillar 50 boosts the strength of the electrode arranging plate 48. Damage to the high-frequency electrode is prevented even if the thermal expansion coefficient of the high-frequency electrode is larger than that of the electrode arranging plate, since the gaps absorb the thermal expansion differential.
摘要翻译： 防止晶片污染，同时防止损坏高频电极和基座。 MMT装置的基座40的主体41由加热器布置板42，电极布置板48和全部由石英制成的支撑板56组成。 在电极配置板48的上表面同心地形成有固定深度的圆形电极布置孔49，并且在电极布置孔49的底部以矩阵形式形成四边形柱50，形成多个插入孔52 在盘形高频电极51中，并且通过将每个支柱50插入每个插入孔52中而将高频电极51安装在电极布置孔49中。间隙Sa和Sb设置在高频电极 51和电极配置板48.支柱50提高电极排列板48的强度。即使高频电极的热膨胀系数大于电极排列的热膨胀系数，也防止了高频电极的损坏 因为间隙吸收热膨胀差。
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2.发明授权公开(公告)号：US08906161B2
公开(公告)日：2014-12-09
申请号：US12458096
申请日：2009-06-30
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306 , H01J37/32 , H01L21/67
CPC分类号： H01L21/67103 , H01J37/32082 , H01J2237/2001 , Y10T279/23
摘要： A tubular electrode (215) and a tubular magnet (216) are installed on an external section of a processing furnace (202) for an MMT device. A susceptor (217) for holding a wafer (200) is installed inside a processing chamber (201) of the processing furnace. A gate valve (244) for conveying the wafer into and out of the processing chamber; and a shower head (236) for spraying processing gas in a shower onto the wafer, are installed inside the processing furnace. A high frequency electrode (2) and a heater (3) are installed inside the susceptor (217) with a clearance between them and the walls forming the space. The clearances formed between the walls forming the space in the susceptor and the high frequency electrode and the heater prevent damage to the high frequency electrode and the heater even if a thermal expansion differential occurs between the high frequency electrode, the heater and the susceptor.
摘要翻译： 管状电极（215）和管状磁体（216）安装在用于MMT装置的加工炉（202）的外部。 用于保持晶片（200）的感受器（217）安装在处理炉的处理室（201）内。 用于将晶片输入和离开处理室的闸阀（244）; 和用于将淋浴中的处理气体喷射到晶片上的喷头（236）安装在处理炉内。 高频电极（2）和加热器（3）安装在基座（217）的内部，它们之间的间隙和形成空间的壁之间。 即使在高频电极，加热器和基座之间发生热膨胀差，在形成基座和高频电极和加热器之间的空间的壁之间形成的间隙也防止对高频电极和加热器的损坏。
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3.发明申请公开(公告)号：US20080223524A1
公开(公告)日：2008-09-18
申请号：US12153101
申请日：2008-05-14
IPC分类号： H01L21/3065 , C23C16/452 , B01J19/12
CPC分类号： H01L21/67103 , H01J37/32082 , H01J2237/2001 , Y10T279/23
摘要： A tubular electrode (215) and a tubular magnet (216) are installed on an external section of a processing furnace (202) for an MMT device. A susceptor (217) for holding a wafer (200) is installed inside a processing chamber (201) of the processing furnace. A gate valve (244) for conveying the wafer into and out of the processing chamber; and a shower head (236) for spraying processing gas in a shower onto the wafer, are installed inside the processing furnace. A high frequency electrode (2) and a heater (3) are installed inside the susceptor (217) with a clearance between them and the walls forming the space. The clearances formed between the walls forming the space in the susceptor and the high frequency electrode and the heater prevent damage to the high frequency electrode and the heater even if a thermal expansion differential occurs between the high frequency electrode, the heater and the susceptor.
摘要翻译： 管状电极（215）和管状磁体（216）安装在用于MMT装置的加工炉（202）的外部。 用于保持晶片（200）的感受器（217）安装在处理炉的处理室（201）内部。 用于将晶片输入和离开处理室的闸阀（244）; 和用于将淋浴中的处理气体喷射到晶片上的喷头（236）安装在处理炉内。 高频电极（2）和加热器（3）安装在基座（217）的内部，它们之间的间隙和形成空间的壁之间。 即使在高频电极，加热器和基座之间发生热膨胀差，在形成基座和高频电极和加热器之间的空间的壁之间形成的间隙也防止对高频电极和加热器的损坏。
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4.发明授权公开(公告)号：US07842160B2
公开(公告)日：2010-11-30
申请号：US12153101
申请日：2008-05-14
CPC分类号： H01L21/67103 , H01J37/32082 , H01J2237/2001 , Y10T279/23
摘要： A tubular electrode (215) and a tubular magnet (216) are installed on an external section of a processing furnace (202) for an MMT device. A susceptor (217) for holding a wafer (200) is installed inside a processing chamber (201) of the processing furnace. A gate valve (244) for conveying the wafer into and out of the processing chamber; and a shower head (236) for spraying processing gas in a shower onto the wafer, are installed inside the processing furnace. A high frequency electrode (2) and a heater (3) are installed inside the susceptor (217) with a clearance between them and the walls forming the space. The clearances formed between the walls forming the space in the susceptor and the high frequency electrode and the heater prevent damage to the high frequency electrode and the heater even if a thermal expansion differential occurs between the high frequency electrode, the heater and the susceptor.
摘要翻译： 管状电极（215）和管状磁体（216）安装在用于MMT装置的加工炉（202）的外部。 用于保持晶片（200）的感受器（217）安装在处理炉的处理室（201）内。 用于将晶片输入和离开处理室的闸阀（244）; 和用于将淋浴中的处理气体喷射到晶片上的喷头（236）安装在处理炉内。 高频电极（2）和加热器（3）安装在基座（217）的内部，它们之间的间隙和形成空间的壁之间。 即使在高频电极，加热器和基座之间发生热膨胀差，在形成基座和高频电极和加热器之间的空间的壁之间形成的间隙也防止对高频电极和加热器的损坏。
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5.发明申请公开(公告)号：US20080017111A1
公开(公告)日：2008-01-24
申请号：US10589490
申请日：2005-03-04
CPC分类号： H01L21/67103 , H01J37/32082 , H01J37/32532 , H01L21/67069 , H01L21/6833 , Y10T279/23
摘要： Wafer contamination is prevented, while preventing damage to a high-frequency electrode and a susceptor. A main body 41 of the susceptor 40 of an MMT apparatus is composed of a heater arranging plate 42, an electrode arranging plate 48, and a supporting plate 56 all made from quartz. A circular electrode arranging hole 49 with a fixed depth is concentrically formed on the upper surface of the electrode arranging plate 48, and quadrangular pillars 50 are formed protruding in a matrix on the bottom of the electrode arranging hole 49. Multiple insertion holes 52 are formed in a disk-shaped high-frequency electrode 51, and the high-frequency electrode 51 is installed in the electrode arranging hole 49 by inserting each pillar 50 into each insertion hole 52. The gaps Sa and Sb are provided between the high-frequency electrode 51 and the electrode arranging plate 48. The pillar 50 boosts the strength of the electrode arranging plate 48. Damage to the high-frequency electrode is prevented even if the thermal expansion coefficient of the high-frequency electrode is larger than that of the electrode arranging plate, since the gaps absorb the thermal expansion differential.
摘要翻译： 防止晶片污染，同时防止损坏高频电极和基座。 MMT装置的基座40的主体41由加热器布置板42，电极布置板48和全部由石英制成的支撑板56组成。 在电极配置板48的上表面同心地形成有固定深度的圆形电极布置孔49，并且在电极布置孔49的底部以矩阵形式形成四边形柱50，形成多个插入孔52 在盘形高频电极51中，并且通过将每个支柱50插入每个插入孔52中而将高频电极51安装在电极布置孔49中。间隙Sa和Sb设置在高频电极 51和电极配置板48.支柱50提高电极排列板48的强度。即使高频电极的热膨胀系数大于电极排列的热膨胀系数，也防止了高频电极的损坏 因为间隙吸收热膨胀差。
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公开(公告)号：US20060151117A1
公开(公告)日：2006-07-13
申请号：US10544937
申请日：2004-03-30
IPC分类号： C23F1/00 , H01L21/302
CPC分类号： H01L21/67103 , H01J37/32082 , H01J2237/2001 , Y10T279/23
摘要： A tubular electrode (215) and a tubular magnet (216) are installed on an external section of a processing furnace (202) for an MMT device. A susceptor (217) for holding a wafer (200) is installed inside a processing chamber (201) of the processing furnace. A gate valve (244) for conveying the wafer into and out of the processing chamber; and a shower head (236) for spraying processing gas in a shower onto the wafer, are installed inside the processing furnace. A high frequency electrode (2) and a heater (3) are installed inside the susceptor (217) with a clearance between them and the walls forming the space. The clearances formed between the walls forming the space in the susceptor and the high frequency electrode and the heater prevent damage to the high frequency electrode and the heater even if a thermal expansion differential occurs between the high frequency electrode, the heater and the susceptor.
摘要翻译： 管状电极（215）和管状磁体（216）安装在用于MMT装置的加工炉（202）的外部。 用于保持晶片（200）的感受器（217）安装在处理炉的处理室（201）内。 用于将晶片输入和离开处理室的闸阀（244）; 和用于将淋浴中的处理气体喷射到晶片上的喷头（236）安装在处理炉内。 高频电极（2）和加热器（3）安装在基座（217）的内部，它们之间的间隙和形成空间的壁之间。 即使在高频电极，加热器和基座之间发生热膨胀差，在形成基座和高频电极和加热器之间的空间的壁之间形成的间隙也防止对高频电极和加热器的损坏。
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7.发明授权Substrate stage of substrate processing apparatus and substrate processing apparatus 有权基板处理装置和基板处理装置的基板台公开(公告)号：US09142435B2
公开(公告)日：2015-09-22
申请号：US12410261
申请日：2009-03-24
申请人： Mitsunori Ishisaka
发明人： Mitsunori Ishisaka
CPC分类号： H01L21/67109 , H01L21/67103
摘要： Provided is a substrate processing apparatus including a partitioned susceptor and configured to heat a substrate uniformly for improving process quality and yield. The substrate stage comprises a plurality of susceptor segments embedded with heating units, a substrate stage unit comprising the plurality of susceptor segments arranged in a flat configuration to define a substrate placement surface, and a uniform heating part mounted at the substrate placement surface.
摘要翻译： 提供了一种基板处理装置，其包括分隔的基座并且被配置为均匀地加热基板，以提高工艺质量和产量。 衬底台包括嵌入加热单元的多个基座段，包括以扁平构造布置以限定衬底放置表面的多个基座段的衬底台单元和安装在衬底放置表面上的均匀加热部件。
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