公开(公告)号：US20110284929A1

公开(公告)日：2011-11-24

申请号：US13198240

申请日：2011-08-04

申请人： Mitsuyoshi MORI ,  Kazuo Fujiwara ,  Toru Okino ,  Yusuke Otake ,  Hitomi Fujiwara

发明人： Mitsuyoshi MORI ,  Kazuo Fujiwara ,  Toru Okino ,  Yusuke Otake ,  Hitomi Fujiwara

IPC分类号： H01L27/148

CPC分类号： H01L27/1463 ,  H01L27/14654

摘要： In each of pixels 10 arranged in an array pattern, an insulating isolation part 22 electrically isolates adjacent photoelectric conversion elements 11, and the photoelectric conversion element 11 and an amplifier transistor 14. The insulating isolation part 22 constitutes a first region A between the photoelectric conversion elements 11 where the amplifier transistor 14 is not arranged, and a second region B between the photoelectric conversion elements 11 where the amplifier transistor 14 is arranged. A low concentration first isolation diffusion layer 23 is formed below the insulating isolation part 22 constituting the first region A, and a high concentration second isolation diffusion layer 24 and a low concentration first isolation diffusion layer 23 are formed below the insulating isolation part 22 constituting the second region B. A source/drain region of the amplifier transistor 14 in the second region B is formed in a well region 25 formed simultaneously with the second isolation diffusion layer 24.

摘要翻译： 在排列成阵列图形的像素10的每一个中，绝缘隔离部分22电隔离相邻的光电转换元件11和光电转换元件11和放大器晶体管14.绝缘隔离部分22构成光电转换 未布置放大器晶体管14的元件11和布置放大器晶体管14的光电转换元件11之间的第二区域B. 在构成第一区域A的绝缘隔离部分22的下方形成低浓度第一隔离扩散层23，在绝缘隔离部分22的下方形成高浓度第二隔离扩散层24和低浓度第一隔离扩散层23 第二区域B中的放大器晶体管14的源极/漏极区域形成在与第二隔离扩散层24同时形成的阱区域25中。

公开(公告)号：US08471351B2

公开(公告)日：2013-06-25

申请号：US13198451

申请日：2011-08-04

申请人： Mitsuyoshi Mori ,  Toru Okino ,  Yusuke Otake ,  Hitomi Fujiwara

发明人： Mitsuyoshi Mori ,  Toru Okino ,  Yusuke Otake ,  Kazuo Fujiwara

IPC分类号： H01L27/148 ,  H01L27/146 ,  H01L21/00

CPC分类号： H01L27/1463 ,  H01L21/266 ,  H01L27/14609 ,  H01L27/14689

摘要： Each of pixels 10 arranged in an array pattern includes a photoelectric conversion element 11, a transfer transistor 13 for transferring charges to a floating diffusion layer 12, and an amplifier transistor 14 for outputting the transferred charges to an output line. An insulating isolation part 22 isolates the adjacent photoelectric conversion elements 11, and isolates the photoelectric conversion element 11 and the amplifier transistor 14. The insulating isolation part 22 constitutes a first region A between the photoelectric conversion elements 11 where the amplifier transistor 14 is not arranged, and a second region B between the photoelectric conversion elements 11 where the amplifier transistor 14 is arranged. First and second isolation diffusion layers 23 and 24 are formed below the insulating isolation part 22, and the second isolation diffusion layer 24 is wider than the first isolation diffusion layer 23 in the first region A.

摘要翻译： 排列成阵列图案的像素10中的每一个包括光电转换元件11，用于将电荷转移到浮动扩散层12的转移晶体管13和用于将转移的电荷输出到输出线的放大器晶体管14。 绝缘隔离部分22隔离相邻的光电转换元件11，并隔离光电转换元件11和放大晶体管14.隔离隔离部分22构成放大晶体管14未布置的光电转换元件11之间的第一区域A 以及布置有放大晶体管14的光电转换元件11之间的第二区域B. 第一和第二隔离扩散层23和24形成在绝缘隔离部22的下方，第二隔离扩散层24比第一区域A中的第一隔离扩散层23宽。

公开(公告)号：US20110291162A1

公开(公告)日：2011-12-01

申请号：US13198451

申请日：2011-08-04

申请人： Mitsuyoshi MORI ,  Toru Okino ,  Yusuke Otake ,  Kazuo Fujiwara ,  Hitomi Fujiwara

发明人： Mitsuyoshi MORI ,  Toru Okino ,  Yusuke Otake ,  Kazuo Fujiwara ,  Hitomi Fujiwara

IPC分类号： H01L27/148

CPC分类号： H01L27/1463 ,  H01L21/266 ,  H01L27/14609 ,  H01L27/14689

摘要： Each of pixels 10 arranged in an array pattern includes a photoelectric conversion element 11, a transfer transistor 13 for transferring charges to a floating diffusion layer 12, and an amplifier transistor 14 for outputting the transferred charges to an output line. An insulating isolation part 22 isolates the adjacent photoelectric conversion elements 11, and isolates the photoelectric conversion element 11 and the amplifier transistor 14. The insulating isolation part 22 constitutes a first region A between the photoelectric conversion elements 11 where the amplifier transistor 14 is not arranged, and a second region B between the photoelectric conversion elements 11 where the amplifier transistor 14 is arranged. First and second isolation diffusion layers 23 and 24 are formed below the insulating isolation part 22, and the second isolation diffusion layer 24 is wider than the first isolation diffusion layer 23 in the first region A.

摘要翻译： 排列成阵列图案的像素10中的每一个包括光电转换元件11，用于将电荷转移到浮动扩散层12的转移晶体管13和用于将转移的电荷输出到输出线的放大器晶体管14。 绝缘隔离部分22隔离相邻的光电转换元件11，并隔离光电转换元件11和放大晶体管14.隔离隔离部分22构成放大晶体管14未布置的光电转换元件11之间的第一区域A 以及布置有放大晶体管14的光电转换元件11之间的第二区域B. 第一和第二隔离扩散层23和24形成在绝缘隔离部22的下方，第二隔离扩散层24比第一区域A中的第一隔离扩散层23宽。

公开(公告)号：US08592874B2

公开(公告)日：2013-11-26

申请号：US13198240

申请日：2011-08-04

申请人： Mitsuyoshi Mori ,  Toru Okino ,  Yusuke Otake ,  Hitomi Fujiwara

发明人： Mitsuyoshi Mori ,  Kazuo Fujiwara ,  Toru Okino ,  Yusuke Otake

IPC分类号： H01L27/148 ,  H01L29/768

CPC分类号： H01L27/1463 ,  H01L27/14654

摘要： In each of pixels 10 arranged in an array pattern, an insulating isolation part 22 electrically isolates adjacent photoelectric conversion elements 11, and the photoelectric conversion element 11 and an amplifier transistor 14. The insulating isolation part 22 constitutes a first region A between the photoelectric conversion elements 11 where the amplifier transistor 14 is not arranged, and a second region B between the photoelectric conversion elements 11 where the amplifier transistor 14 is arranged. A low concentration first isolation diffusion layer 23 is formed below the insulating isolation part 22 constituting the first region A, and a high concentration second isolation diffusion layer 24 and a low concentration first isolation diffusion layer 23 are formed below the insulating isolation part 22 constituting the second region B. A source/drain region of the amplifier transistor 14 in the second region B is formed in a well region 25 formed simultaneously with the second isolation diffusion layer 24.

摘要翻译： 在排列成阵列图形的像素10的每一个中，绝缘隔离部分22电隔离相邻的光电转换元件11和光电转换元件11和放大器晶体管14.绝缘隔离部分22构成光电转换 未布置放大器晶体管14的元件11和布置放大器晶体管14的光电转换元件11之间的第二区域B. 在构成第一区域A的绝缘隔离部分22的下方形成低浓度第一隔离扩散层23，在绝缘隔离部分22的下方形成高浓度第二隔离扩散层24和低浓度第一隔离扩散层23 第二区域B中的放大器晶体管14的源极/漏极区域形成在与第二隔离扩散层24同时形成的阱区域25中。

公开(公告)号：US20100220228A1

公开(公告)日：2010-09-02

申请号：US12602747

申请日：2009-06-02

申请人： Yusuke Otake ,  Mitsuyoshi Mori ,  Shinzou Kouyama ,  Toru Okino

发明人： Yusuke Otake ,  Mitsuyoshi Mori ,  Shinzou Kouyama ,  Toru Okino

IPC分类号： H04N5/335

CPC分类号： H04N9/045 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14647 ,  H04N5/332

摘要： A solid-state image sensor includes: a semiconductor substrate 22; a plurality of pixels 23 arranged on the semiconductor substrate 22 and respectively including photoelectric conversion regions 24; and an isolation region 25 electrically isolating the pixels 23 from one another. The first pixel 31 includes a first photoelectric conversion region 32 and a first color filter 41 having a peak of its optical transmission in a first wavelength range. The second pixel 34 adjacent to the first pixel 31 includes a second photoelectric conversion region 35 and a second color filter 42 having peaks in its optical transmission in the first wavelength range and a second wavelength range including shorter wavelengths than the first wavelength range. A portion 33 of a deep portion of the first photoelectric conversion region 32 extends across the isolation region 25 to reach a portion under the second photoelectric conversion region 35.

摘要翻译： 固态图像传感器包括：半导体衬底22; 配置在半导体基板22上并分别包括光电转换区域24的多个像素23; 以及将像素23彼此电隔离的隔离区域25。 第一像素31包括在第一波长范围内具有其光传输峰值的第一光电转换区域32和第一滤色器41。 与第一像素31相邻的第二像素34包括在其第一波长范围的光传输中具有峰值的第二光电转换区域35和第二滤色器42以及包括比第一波长范围更短的波长的第二波长范围。 第一光电转换区域32的深部的一部分33延伸穿过隔离区域25，到达第二光电转换区域35的下方。

公开(公告)号：US08243176B2

公开(公告)日：2012-08-14

申请号：US12602747

申请日：2009-06-02

申请人： Yusuke Otake ,  Mitsuyoshi Mori ,  Shinzou Kouyama ,  Toru Okino

发明人： Yusuke Otake ,  Mitsuyoshi Mori ,  Shinzou Kouyama ,  Toru Okino

IPC分类号： H04N3/14 ,  H04N5/335

CPC分类号： H04N9/045 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14647 ,  H04N5/332

摘要： A solid-state image sensor includes: a semiconductor substrate 22; a plurality of pixels 23 arranged on the semiconductor substrate 22 and respectively including photoelectric conversion regions 24; and an isolation region 25 electrically isolating the pixels 23 from one another. The first pixel 31 includes a first photoelectric conversion region 32 and a first color filter 41 having a peak of its optical transmission in a first wavelength range. The second pixel 34 adjacent to the first pixel 31 includes a second photoelectric conversion region 35 and a second color filter 42 having peaks in its optical transmission in the first wavelength range and a second wavelength range including shorter wavelengths than the first wavelength range. A portion 33 of a deep portion of the first photoelectric conversion region 32 extends across the isolation region 25 to reach a portion under the second photoelectric conversion region 35.

摘要翻译： 固态图像传感器包括：半导体衬底22; 配置在半导体基板22上并分别包括光电转换区域24的多个像素23; 以及将像素23彼此电隔离的隔离区域25。 第一像素31包括在第一波长范围内具有其光传输峰值的第一光电转换区域32和第一滤色器41。 与第一像素31相邻的第二像素34包括在其第一波长范围的光传输中具有峰值的第二光电转换区域35和第二滤色器42以及包括比第一波长范围更短的波长的第二波长范围。 第一光电转换区域32的深部的一部分33延伸穿过隔离区域25，到达第二光电转换区域35的下方。