公开(公告)号：US20110284929A1

公开(公告)日：2011-11-24

申请号：US13198240

申请日：2011-08-04

申请人： Mitsuyoshi MORI ,  Kazuo Fujiwara ,  Toru Okino ,  Yusuke Otake ,  Hitomi Fujiwara

发明人： Mitsuyoshi MORI ,  Kazuo Fujiwara ,  Toru Okino ,  Yusuke Otake ,  Hitomi Fujiwara

IPC分类号： H01L27/148

CPC分类号： H01L27/1463 ,  H01L27/14654

摘要： In each of pixels 10 arranged in an array pattern, an insulating isolation part 22 electrically isolates adjacent photoelectric conversion elements 11, and the photoelectric conversion element 11 and an amplifier transistor 14. The insulating isolation part 22 constitutes a first region A between the photoelectric conversion elements 11 where the amplifier transistor 14 is not arranged, and a second region B between the photoelectric conversion elements 11 where the amplifier transistor 14 is arranged. A low concentration first isolation diffusion layer 23 is formed below the insulating isolation part 22 constituting the first region A, and a high concentration second isolation diffusion layer 24 and a low concentration first isolation diffusion layer 23 are formed below the insulating isolation part 22 constituting the second region B. A source/drain region of the amplifier transistor 14 in the second region B is formed in a well region 25 formed simultaneously with the second isolation diffusion layer 24.

摘要翻译： 在排列成阵列图形的像素10的每一个中，绝缘隔离部分22电隔离相邻的光电转换元件11和光电转换元件11和放大器晶体管14.绝缘隔离部分22构成光电转换 未布置放大器晶体管14的元件11和布置放大器晶体管14的光电转换元件11之间的第二区域B. 在构成第一区域A的绝缘隔离部分22的下方形成低浓度第一隔离扩散层23，在绝缘隔离部分22的下方形成高浓度第二隔离扩散层24和低浓度第一隔离扩散层23 第二区域B中的放大器晶体管14的源极/漏极区域形成在与第二隔离扩散层24同时形成的阱区域25中。

公开(公告)号：US08592874B2

公开(公告)日：2013-11-26

申请号：US13198240

申请日：2011-08-04

申请人： Mitsuyoshi Mori ,  Toru Okino ,  Yusuke Otake ,  Hitomi Fujiwara

发明人： Mitsuyoshi Mori ,  Kazuo Fujiwara ,  Toru Okino ,  Yusuke Otake

IPC分类号： H01L27/148 ,  H01L29/768

CPC分类号： H01L27/1463 ,  H01L27/14654

摘要： In each of pixels 10 arranged in an array pattern, an insulating isolation part 22 electrically isolates adjacent photoelectric conversion elements 11, and the photoelectric conversion element 11 and an amplifier transistor 14. The insulating isolation part 22 constitutes a first region A between the photoelectric conversion elements 11 where the amplifier transistor 14 is not arranged, and a second region B between the photoelectric conversion elements 11 where the amplifier transistor 14 is arranged. A low concentration first isolation diffusion layer 23 is formed below the insulating isolation part 22 constituting the first region A, and a high concentration second isolation diffusion layer 24 and a low concentration first isolation diffusion layer 23 are formed below the insulating isolation part 22 constituting the second region B. A source/drain region of the amplifier transistor 14 in the second region B is formed in a well region 25 formed simultaneously with the second isolation diffusion layer 24.

摘要翻译： 在排列成阵列图形的像素10的每一个中，绝缘隔离部分22电隔离相邻的光电转换元件11和光电转换元件11和放大器晶体管14.绝缘隔离部分22构成光电转换 未布置放大器晶体管14的元件11和布置放大器晶体管14的光电转换元件11之间的第二区域B. 在构成第一区域A的绝缘隔离部分22的下方形成低浓度第一隔离扩散层23，在绝缘隔离部分22的下方形成高浓度第二隔离扩散层24和低浓度第一隔离扩散层23 第二区域B中的放大器晶体管14的源极/漏极区域形成在与第二隔离扩散层24同时形成的阱区域25中。

公开(公告)号：US08471351B2

公开(公告)日：2013-06-25

申请号：US13198451

申请日：2011-08-04

申请人： Mitsuyoshi Mori ,  Toru Okino ,  Yusuke Otake ,  Hitomi Fujiwara

发明人： Mitsuyoshi Mori ,  Toru Okino ,  Yusuke Otake ,  Kazuo Fujiwara

IPC分类号： H01L27/148 ,  H01L27/146 ,  H01L21/00

CPC分类号： H01L27/1463 ,  H01L21/266 ,  H01L27/14609 ,  H01L27/14689

摘要： Each of pixels 10 arranged in an array pattern includes a photoelectric conversion element 11, a transfer transistor 13 for transferring charges to a floating diffusion layer 12, and an amplifier transistor 14 for outputting the transferred charges to an output line. An insulating isolation part 22 isolates the adjacent photoelectric conversion elements 11, and isolates the photoelectric conversion element 11 and the amplifier transistor 14. The insulating isolation part 22 constitutes a first region A between the photoelectric conversion elements 11 where the amplifier transistor 14 is not arranged, and a second region B between the photoelectric conversion elements 11 where the amplifier transistor 14 is arranged. First and second isolation diffusion layers 23 and 24 are formed below the insulating isolation part 22, and the second isolation diffusion layer 24 is wider than the first isolation diffusion layer 23 in the first region A.

摘要翻译： 排列成阵列图案的像素10中的每一个包括光电转换元件11，用于将电荷转移到浮动扩散层12的转移晶体管13和用于将转移的电荷输出到输出线的放大器晶体管14。 绝缘隔离部分22隔离相邻的光电转换元件11，并隔离光电转换元件11和放大晶体管14.隔离隔离部分22构成放大晶体管14未布置的光电转换元件11之间的第一区域A 以及布置有放大晶体管14的光电转换元件11之间的第二区域B. 第一和第二隔离扩散层23和24形成在绝缘隔离部22的下方，第二隔离扩散层24比第一区域A中的第一隔离扩散层23宽。

公开(公告)号：US20110291162A1

公开(公告)日：2011-12-01

申请号：US13198451

申请日：2011-08-04

申请人： Mitsuyoshi MORI ,  Toru Okino ,  Yusuke Otake ,  Kazuo Fujiwara ,  Hitomi Fujiwara

发明人： Mitsuyoshi MORI ,  Toru Okino ,  Yusuke Otake ,  Kazuo Fujiwara ,  Hitomi Fujiwara

IPC分类号： H01L27/148

CPC分类号： H01L27/1463 ,  H01L21/266 ,  H01L27/14609 ,  H01L27/14689

摘要： Each of pixels 10 arranged in an array pattern includes a photoelectric conversion element 11, a transfer transistor 13 for transferring charges to a floating diffusion layer 12, and an amplifier transistor 14 for outputting the transferred charges to an output line. An insulating isolation part 22 isolates the adjacent photoelectric conversion elements 11, and isolates the photoelectric conversion element 11 and the amplifier transistor 14. The insulating isolation part 22 constitutes a first region A between the photoelectric conversion elements 11 where the amplifier transistor 14 is not arranged, and a second region B between the photoelectric conversion elements 11 where the amplifier transistor 14 is arranged. First and second isolation diffusion layers 23 and 24 are formed below the insulating isolation part 22, and the second isolation diffusion layer 24 is wider than the first isolation diffusion layer 23 in the first region A.

摘要翻译： 排列成阵列图案的像素10中的每一个包括光电转换元件11，用于将电荷转移到浮动扩散层12的转移晶体管13和用于将转移的电荷输出到输出线的放大器晶体管14。 绝缘隔离部分22隔离相邻的光电转换元件11，并隔离光电转换元件11和放大晶体管14.隔离隔离部分22构成放大晶体管14未布置的光电转换元件11之间的第一区域A 以及布置有放大晶体管14的光电转换元件11之间的第二区域B. 第一和第二隔离扩散层23和24形成在绝缘隔离部22的下方，第二隔离扩散层24比第一区域A中的第一隔离扩散层23宽。

公开(公告)号：US20110115955A1

公开(公告)日：2011-05-19

申请号：US13006936

申请日：2011-01-14

申请人： Tomoo Okutani ,  Kazuo Fujiwara ,  Hitomi Fujiwara

发明人： Tomoo Okutani ,  Kazuo Fujiwara ,  Hitomi Fujiwara

IPC分类号： H04N5/335 ,  H01L31/0224

CPC分类号： H01L27/14618 ,  H01L23/3677 ,  H01L27/14627 ,  H01L27/14636 ,  H01L27/14683 ,  H01L2924/0002 ,  H01L2924/00

摘要： An object of the present invention is to provide a solid-state image device that can effectively dissipate heat. In order to attain the object, the solid-state image device of the present invention includes non-through heat dissipation portions (7) provided on a semiconductor substrate (2). The non-through heat dissipation portion (7) is made up of a non-through hole and a metal embedded in the non-through hole. The non-through hole has one open end on one of the surfaces of the semiconductor substrate (2), extends from the one surface toward the other surface of the semiconductor substrate (2), and has the other end between the surfaces of the semiconductor substrate (2). The non-through heat dissipation portions (7) act as heat dissipation paths.

摘要翻译： 本发明的目的是提供一种可以有效散热的固态图像装置。 为了实现该目的，本发明的固态成像装置包括设置在半导体基板（2）上的非贯穿散热部（7）。 非通过散热部（7）由非通孔和嵌入在非贯通孔中的金属构成。 非贯通孔在半导体衬底（2）的一个表面上具有一个开口端，从半导体衬底（2）的一个表面向另一个表面延伸，另一端位于半导体衬底 基板（2）。 非通过散热部（7）作为散热路径。

公开(公告)号：US07800144B2

公开(公告)日：2010-09-21

申请号：US12233080

申请日：2008-09-18

申请人： Mitsuyoshi Mori ,  Mikiya Uchida ,  Kazuo Fujiwara ,  Takumi Yamaguchi

发明人： Mitsuyoshi Mori ,  Mikiya Uchida ,  Kazuo Fujiwara ,  Takumi Yamaguchi

IPC分类号： H01L31/062 ,  H01L31/113

CPC分类号： H01L27/14636 ,  H01L27/14609 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14625 ,  H01L27/14685 ,  H01L27/14689 ,  H01L31/02164

摘要： A semiconductor device of the present invention includes a substrate; an imaging region which is formed at part of the substrate and in which photoelectric conversion cells including photoelectric conversion sections are arranged in the form of an array; a control-circuit region which is formed at part of the substrate and in which the imaging region is controlled and a signal from the imaging region is outputted; and a copper-containing interconnect layer formed above the substrate and made of a material containing copper. Furthermore, a first anti-diffusion layer and a second anti-diffusion layer are formed, as anti-diffusion layers for preventing the copper from diffusing into each photoelectric conversion section, on the photoelectric conversion section and the copper-containing interconnect layer, respectively.

摘要翻译： 本发明的半导体器件包括：衬底; 在基板的一部分形成的成像区域，其中包含光电转换部分的光电转换单元以阵列的形式排列; 形成在基板的一部分并且成像区域被控制并且来自成像区域的信号被输出的控制电路区域; 以及形成在基板上方并由含有铜的材料制成的含铜互连层。 此外，分别在光电转换部和含铜互连层上形成第一防扩散层和第二防扩散层，作为用于防止铜扩散到每个光电转换部中的防扩散层。

公开(公告)号：US20090014759A1

公开(公告)日：2009-01-15

申请号：US12233080

申请日：2008-09-18

申请人： Mitsuyoshi MORI ,  Mikiya Uchida ,  Kazuo Fujiwara ,  Takumi Yamaguchi

发明人： Mitsuyoshi MORI ,  Mikiya Uchida ,  Kazuo Fujiwara ,  Takumi Yamaguchi

IPC分类号： H01L31/113

CPC分类号： H01L27/14636 ,  H01L27/14609 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14625 ,  H01L27/14685 ,  H01L27/14689 ,  H01L31/02164

摘要： A semiconductor device of the present invention includes a substrate; an imaging region which is formed at part of the substrate and in which photoelectric conversion cells including photoelectric conversion sections are arranged in the form of an array; a control-circuit region which is formed at part of the substrate and in which the imaging region is controlled and a signal from the imaging region is outputted; and a copper-containing interconnect layer formed above the substrate and made of a material containing copper. Furthermore, a first anti-diffusion layer and a second anti-diffusion layer are formed, as anti-diffusion layers for preventing the copper from diffusing into each photoelectric conversion section, on the photoelectric conversion section and the copper-containing interconnect layer, respectively.

摘要翻译： 本发明的半导体器件包括：衬底; 在基板的一部分形成的成像区域，其中包含光电转换部分的光电转换单元以阵列的形式排列; 形成在基板的一部分并且成像区域被控制并且来自成像区域的信号被输出的控制电路区域; 以及形成在基板上方并由含有铜的材料制成的含铜互连层。 此外，分别在光电转换部和含铜互连层上形成第一防扩散层和第二防扩散层，作为用于防止铜扩散到每个光电转换部中的防扩散层。

公开(公告)号：US20090021626A1

公开(公告)日：2009-01-22

申请号：US12233068

申请日：2008-09-18

申请人： Mitsuyoshi MORI ,  Mikiya Uchida ,  Kazuo Fujiwara ,  Takumi Yamaguchi

发明人： Mitsuyoshi MORI ,  Mikiya Uchida ,  Kazuo Fujiwara ,  Takumi Yamaguchi

IPC分类号： H04N5/335

CPC分类号： H01L27/14636 ,  H01L27/14609 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14625 ,  H01L27/14685 ,  H01L27/14689 ,  H01L31/02164

摘要： A semiconductor device of the present invention includes a substrate; an imaging region which is formed at part of the substrate and in which photoelectric conversion cells including photoelectric conversion sections are arranged in the form of an array; a control-circuit region which is formed at part of the substrate and in which the imaging region is controlled and a signal from the imaging region is outputted; and a copper-containing interconnect layer formed above the substrate and made of a material containing copper. Furthermore, a first anti-diffusion layer and a second anti-diffusion layer are formed, as anti-diffusion layers for preventing the copper from diffusing into each photoelectric conversion section, on the photoelectric conversion section and the copper-containing interconnect layer, respectively.

摘要翻译： 本发明的半导体器件包括：衬底; 在基板的一部分形成的成像区域，其中包含光电转换部分的光电转换单元以阵列的形式排列; 形成在基板的一部分并且成像区域被控制并且来自成像区域的信号被输出的控制电路区域; 以及形成在基板上方并由含有铜的材料制成的含铜互连层。 此外，分别在光电转换部和含铜互连层上形成第一防扩散层和第二防扩散层，作为用于防止铜扩散到每个光电转换部中的防扩散层。

公开(公告)号：US07436012B2

公开(公告)日：2008-10-14

申请号：US11335533

申请日：2006-01-20

申请人： Mitsuyoshi Mori ,  Mikiya Uchida ,  Kazuo Fujiwara ,  Takumi Yamaguchi

发明人： Mitsuyoshi Mori ,  Mikiya Uchida ,  Kazuo Fujiwara ,  Takumi Yamaguchi

IPC分类号： H01L31/062 ,  H01L31/113

CPC分类号： H01L27/14636 ,  H01L27/14609 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14625 ,  H01L27/14685 ,  H01L27/14689 ,  H01L31/02164

摘要： A semiconductor device of the present invention includes a substrate; an imaging region which is formed at part of the substrate and in which photoelectric conversion cells including photoelectric conversion sections are arranged in the form of an array; a control-circuit region which is formed at part of the substrate and in which the imaging region is controlled and a signal from the imaging region is outputted; and a copper-containing interconnect layer formed above the substrate and made of a material containing copper. Furthermore, a first anti-diffusion layer and a second anti-diffusion layer are formed, as anti-diffusion layers for preventing the copper from diffusing into each photoelectric conversion section, on the photoelectric conversion section and the copper-containing interconnect layer, respectively.

摘要翻译： 本发明的半导体器件包括：衬底; 在基板的一部分形成的成像区域，其中包含光电转换部分的光电转换单元以阵列的形式排列; 形成在基板的一部分并且成像区域被控制并且来自成像区域的信号被输出的控制电路区域; 以及形成在基板上方并由含有铜的材料制成的含铜互连层。 此外，分别在光电转换部和含铜互连层上形成第一防扩散层和第二防扩散层，作为用于防止铜扩散到每个光电转换部中的防扩散层。

公开(公告)号：US20060163628A1

公开(公告)日：2006-07-27

申请号：US11335533

申请日：2006-01-20

申请人： Mitsuyoshi Mori ,  Mikiya Uchida ,  Kazuo Fujiwara ,  Takumi Yamaguchi

发明人： Mitsuyoshi Mori ,  Mikiya Uchida ,  Kazuo Fujiwara ,  Takumi Yamaguchi

IPC分类号： H01L31/113 ,  H01L21/00

CPC分类号： H01L27/14636 ,  H01L27/14609 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14625 ,  H01L27/14685 ,  H01L27/14689 ,  H01L31/02164

摘要： A semiconductor device of the present invention includes a substrate; an imaging region which is formed at part of the substrate and in which photoelectric conversion cells including photoelectric conversion sections are arranged in the form of an array; a control-circuit region which is formed at part of the substrate and in which the imaging region is controlled and a signal from the imaging region is outputted; and a copper-containing interconnect layer formed above the substrate and made of a material containing copper. Furthermore, a first anti-diffusion layer and a second anti-diffusion layer are formed, as anti-diffusion layers for preventing the copper from diffusing into each photoelectric conversion section, on the photoelectric conversion section and the copper-containing interconnect layer, respectively.

摘要翻译： 本发明的半导体器件包括：衬底; 在基板的一部分形成的成像区域，其中包含光电转换部分的光电转换单元以阵列的形式排列; 形成在基板的一部分并且成像区域被控制并且来自成像区域的信号被输出的控制电路区域; 以及形成在基板上方并由含有铜的材料制成的含铜互连层。 此外，分别在光电转换部和含铜互连层上形成第一防扩散层和第二防扩散层，作为用于防止铜扩散到每个光电转换部中的防扩散层。