利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

798 条记录 (耗时 0.041 秒)

    MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
    5.
    发明申请
    MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE 有权
    半导体器件的制造方法

    公开(公告)号：US20090215247A1

    公开(公告)日：2009-08-27

    申请号：US12434637

    申请日：2009-05-02

    申请人： Takashi Sato ,  Junichi Takano ,  Takashi Sato ,  Tokuo Naitou

    发明人： Takashi Sato ,  Junichi Takano ,  Takashi Sato ,  Tokuo Naitou

    IPC分类号： H01L21/304

    CPC分类号： H01L21/67092 ,  H01L21/78 ,  H01L2224/06181 ,  H01L2224/32245 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2924/00

    摘要： Illumination devices (7a) and (7b) which irradiate light having a wavelength of 1.1 μm or less are arranged on a front surface and a rear surface of a cover (8) of a dicing device (1). After a wafer is placed on a dicing stage (3), when the wafer is diced by a blade (4a) attached to a spindle (5), light is irradiated on an entire surface of an upper surface (element forming surface) of the wafer by the illumination devices (7a) and (7b). At this time, an illuminance of light on the wafer is set at 70 lux or more and 2000 lux or less. By this means, during a dicing operation, an area to be a light-shielded area by the spindle (5) or the like is not present on the wafer.

    摘要翻译： 在扫描装置（1）的盖（8）的前表面和后表面上布置照射波长为1.1μm以下的光的照明装置（7a）和（7b）。 在将晶片放置在切割台（3）上之后，当通过安装在主轴（5）上的刀片（4a）切割晶片时，将光照射在上表面（元件形成表面）的整个表面上 晶片通过照明装置（7a）和（7b）。 此时，晶片上的光的照度设定为70勒克司以上且2000lux以下。 通过这种方式，在切割操作期间，晶片上不存在由主轴（5）等构成遮光区域的区域。

    Light illumination during wafer dicing to prevent aluminum corrosion
    6.
    发明授权
    Light illumination during wafer dicing to prevent aluminum corrosion 有权
    晶圆切割时的光照，防止铝腐蚀

    公开(公告)号：US07998793B2

    公开(公告)日：2011-08-16

    申请号：US12434637

    申请日：2009-05-02

    申请人： Takashi Sato ,  Junichi Takano ,  Takashi Sato ,  Tokuo Naitou

    发明人： Takashi Sato ,  Junichi Takano ,  Takashi Sato ,  Tokuo Naitou

    IPC分类号： H01L21/00

    CPC分类号： H01L21/67092 ,  H01L21/78 ,  H01L2224/06181 ,  H01L2224/32245 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2924/00

    摘要： Illumination devices (7a) and (7b) which irradiate light having a wavelength of 1.1 μm or less are arranged on a front surface and a rear surface of a cover (8) of a dicing device (1). After a wafer is placed on a dicing stage (3), when the wafer is diced by a blade (4a) attached to a spindle (5), light is irradiated on an entire surface of an upper surface (element forming surface) of the wafer by the illumination devices (7a) and (7b). At this time, an illuminance of light on the wafer is set at 70 lux or more and 2000 lux or less. By this means, during a dicing operation, an area to be a light-shielded area by the spindle (5) or the like is not present on the wafer.

    摘要翻译： 在切割装置（1）的盖（8）的前表面和后表面上布置照射波长为1.1μm以下的光的照明装置（7a）和（7b）。 在将晶片放置在切割台（3）上之后，当通过安装在主轴（5）上的刀片（4a）切割晶片时，将光照射在上表面（元件形成表面）的整个表面上 晶片通过照明装置（7a）和（7b）。 此时，晶片上的光的照度设定为70勒克司以上且2000lux以下。 通过这种方式，在切割操作期间，晶片上不存在由主轴（5）等构成遮光区域的区域。

    Manufacturing Method of Semiconductor Device
    7.
    发明申请
    Manufacturing Method of Semiconductor Device 审中-公开
    半导体器件的制造方法

    公开(公告)号：US20080138962A1

    公开(公告)日：2008-06-12

    申请号：US11632993

    申请日：2004-07-22

    申请人： Takashi Sato ,  Junichi Takano ,  Takashi Sato ,  Tokuo Naitou

    发明人： Takashi Sato ,  Junichi Takano ,  Takashi Sato ,  Tokuo Naitou

    IPC分类号： H01L21/304

    CPC分类号： H01L21/67092 ,  H01L21/78 ,  H01L2224/06181 ,  H01L2224/32245 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2924/00

    摘要： Illumination devices (7a) and (7b) which irradiate light having a wavelength of 1.1 μm or less are arranged on a front surface and a rear surface of a cover (8) of a dicing device (1). After a wafer is placed on a dicing stage (3), when the wafer is diced by a blade (4a) attached to a spindle (5), light is irradiated on an entire surface of an upper surface (element forming surface) of the wafer by the illumination devices (7a) and (7b). At this time, an illuminance of light on the wafer is set at 70 lux or more and 2000 lux or less. By this means, during a dicing operation, an area to be a light-shielded area by the spindle (5) or the like is not present on the wafer.

    摘要翻译： 在切割装置（1）的盖（8）的前表面和后表面上布置照射具有1.1μm或更小的波长的光的照明装置（7a）和（7b）。 在将晶片放置在切割台（3）上之后，当通过安装在主轴（5）上的刀片（4a）切割晶片时，将光照射在上表面（元件形成表面）的整个表面上 通过照明装置（7a）和（7b）的晶片。 此时，晶片上的光的照度设定为70勒克司以上且2000lux以下。 通过这种方式，在切割操作期间，晶片上不存在由主轴（5）等构成遮光区域的区域。

    Containment vessel and nuclear power plant
    9.
    发明授权
    Containment vessel and nuclear power plant 有权

    公开(公告)号：US09818495B2

    公开(公告)日：2017-11-14

    申请号：US13988966

    申请日：2011-09-14

    申请人： Takashi Sato

    发明人： Takashi Sato

    IPC分类号： G21C13/10 ,  G21C13/00 ,  G21C9/004 ,  G21C9/008 ,  G21C9/06 ,  G21C15/18 ,  G21F9/02

    CPC分类号： G21C13/00 ,  G21C9/004 ,  G21C9/008 ,  G21C9/06 ,  G21C13/10 ,  G21C15/18 ,  G21F9/02 ,  Y02E30/40

    摘要： A containment vessel has an inner shell covering a reactor pressure vessel and an outer shell forming an outer well which is a gas-tight space covering the horizontal outer periphery of the inner shell. The inner shell has a first cylindrical side wall surrounding the horizontal periphery of the reactor pressure vessel, a containment vessel head which covers the upper part of the reactor pressure vessel, and a first top slab connecting in a gas-tight manner the periphery of the containment vessel head and the upper end of the first cylindrical side wall. The outer shell has a second cylindrical side wall surrounding the outer periphery of the first cylindrical side wall, and also has a second to slab connecting in a gas-tight manner the vicinity of the upper end of the second cylindrical side wall and the first cylindrical side wall.

    Power supply circuit and apparatus including the circuit
    10.
    发明授权
    Power supply circuit and apparatus including the circuit 有权

    公开(公告)号：US09653994B2

    公开(公告)日：2017-05-16

    申请号：US13215035

    申请日：2011-08-22

    申请人： Katsumi Taguchi ,  Takashi Sato

    发明人： Katsumi Taguchi ,  Takashi Sato

    IPC分类号： G01R31/00 ,  H02M3/158 ,  H02M1/36

    CPC分类号： H02M3/158 ,  H02M1/36

    摘要： A power supply device supplying power to a device via a power line is provided, where the power supply device includes a first voltage generation unit configured to generate and supply a first direct voltage to the power line, a second voltage generation unit configured to generate and supply a second direct voltage lower than the first direct voltage to the power line, a measurement unit configured to measure a voltage of the power line, a control unit configured to control supply of the first direct voltage with the first voltage generation unit after starting supply of the second direct voltage with the second voltage generation unit, and a determination unit configured to determine a state of the power supply device based on the measured voltage and a first threshold value after starting the supply of the second direct voltage.