Nano-tip fabrication by spatially controlled etching
    1.
    发明授权
    Nano-tip fabrication by spatially controlled etching 有权
    通过空间控制蚀刻的纳米尖端制造

    公开(公告)号:US07431856B2

    公开(公告)日:2008-10-07

    申请号:US11383909

    申请日:2006-05-17

    IPC分类号: B44C1/22

    摘要: A method of fabricating nano-tips involves placing a precursor nanotip with an apex and shank in a vacuum chamber; optionally applying an electric field to the precursor nanotip to remove oxide and other contaminant species; subsequently admitting an etchant gas to the vacuum chamber to perform field assisted etching by preferential adsorption of the etchant gas on the shank; and gradually reducing the applied electric field to confine the adsorption of the etchant gas to the shank as etching progresses.

    摘要翻译: 制造纳米尖端的方法包括将具有顶点和柄的前体纳米尖端放置在真空室中; 任选地将电场施加到所述前体纳米尖端以除去氧化物和其它污染物质; 随后通过蚀刻剂气体优先吸附在柄上,将真空室中的蚀刻剂气体允许进行现场辅助蚀刻; 并且随着蚀刻进行,逐渐减小所施加的电场以限制蚀刻剂气体对柄的吸附。

    NANO-TIP FABRICATION BY SPATIALLY CONTROLLED ETCHING
    2.
    发明申请
    NANO-TIP FABRICATION BY SPATIALLY CONTROLLED ETCHING 有权
    通过空间控制蚀刻的纳米技术制造

    公开(公告)号:US20070025907A1

    公开(公告)日:2007-02-01

    申请号:US11383909

    申请日:2006-05-17

    IPC分类号: D01F9/12 D01C5/00

    摘要: A method of fabricating nano-tips involves placing a precursor nanotip with an apex and shank in a vacuum chamber; optionally applying an electric field to the precursor nanotip to remove oxide and other contaminant species; subsequently admitting an etchant gas to the vacuum chamber to perform field assisted etching by preferential adsorption of the etchant gas on the shank; and gradually reducing the applied electric field to confine the adsorption of the etchant gas to the shank as etching progresses.

    摘要翻译: 制造纳米尖端的方法包括将具有顶点和柄的前体纳米尖端放置在真空室中; 任选地将电场施加到所述前体纳米尖端以除去氧化物和其它污染物质; 随后通过蚀刻剂气体优先吸附在柄上,将真空室中的蚀刻剂气体允许进行现场辅助蚀刻; 并且随着蚀刻进行,逐渐减小所施加的电场以限制蚀刻剂气体对柄的吸附。