PARTICLE SOURCES AND METHODS FOR MANUFACTURING THE SAME
    7.
    发明申请
    PARTICLE SOURCES AND METHODS FOR MANUFACTURING THE SAME 有权
    颗粒源及其制造方法

    公开(公告)号:US20140077684A1

    公开(公告)日:2014-03-20

    申请号:US13512396

    申请日:2012-05-04

    申请人: Huarong Liu Ping Chen

    发明人: Huarong Liu Ping Chen

    IPC分类号: H01J37/04 H01J9/02

    摘要: The present disclosure provides a method for manufacturing a particle source comprising: placing a metal wire in vacuum, introducing active gas, adjusting a temperature of the metal wire and applying a positive high voltage V to the metal wire to generate at a side of the head of the metal wire an etching zone in which field induced chemical etching (FICE) is performed; increasing by the FICE a surface electric field at the top of the metal wire head to be greater than a field evaporation electric field of material for the metal wire, so that metal atoms at the top of the metal wire are evaporated off; after the field evaporation is activated by the FICE, causing mutual adjustment between the FICE and the field evaporation, until the head of the metal wire has a shape of combination of a base and a tip on the base; and stopping the FICE and the field evaporation when the head of the metal wire takes a predetermine shape.

    摘要翻译: 本公开提供了一种制造颗粒源的方法,包括:将金属丝放置在真空中,引入活性气体,调节金属丝的温度并向金属丝施加正高电压V以在头的一侧产生 的金属线,其中执行场诱导化学蚀刻(FICE)的蚀刻区域; 通过FICE增加金属线头顶部的表面电场比金属线材料的场蒸发电场大,金属线顶部的金属原子被蒸发掉; 在通过FICE激活场蒸发之后,引起FICE和场蒸发之间的相互调节,直到金属丝的头部具有基部和底部的尖端的组合的形状; 并且当金属丝的头部具有预定形状时,停止FICE和场蒸发。

    Nano-tip fabrication by spatially controlled etching
    10.
    发明授权
    Nano-tip fabrication by spatially controlled etching 有权
    通过空间控制蚀刻的纳米尖端制造

    公开(公告)号:US07431856B2

    公开(公告)日:2008-10-07

    申请号:US11383909

    申请日:2006-05-17

    IPC分类号: B44C1/22

    摘要: A method of fabricating nano-tips involves placing a precursor nanotip with an apex and shank in a vacuum chamber; optionally applying an electric field to the precursor nanotip to remove oxide and other contaminant species; subsequently admitting an etchant gas to the vacuum chamber to perform field assisted etching by preferential adsorption of the etchant gas on the shank; and gradually reducing the applied electric field to confine the adsorption of the etchant gas to the shank as etching progresses.

    摘要翻译: 制造纳米尖端的方法包括将具有顶点和柄的前体纳米尖端放置在真空室中; 任选地将电场施加到所述前体纳米尖端以除去氧化物和其它污染物质; 随后通过蚀刻剂气体优先吸附在柄上,将真空室中的蚀刻剂气体允许进行现场辅助蚀刻; 并且随着蚀刻进行,逐渐减小所施加的电场以限制蚀刻剂气体对柄的吸附。