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1.发明申请公开(公告)号：US20070128781A1
公开(公告)日：2007-06-07
申请号：US11502948
申请日：2006-08-11
IPC分类号： H01L21/338
CPC分类号： H01L29/458 , H01L29/517 , H01L29/66643
摘要： Provided are a Schottky barrier tunnel transistor and a method of manufacturing the same. The method includes the steps of: preparing a substrate; forming an active silicon layer on the substrate; forming a gate insulating layer on a region of the silicon layer; forming a gate electrode on the gate insulating layer; implanting ions into the silicon layer on which the gate insulating layer is not formed; and annealing the ion-implanted silicon layer. Accordingly, it is possible to manufacture the Schottky barrier tunnel transistor having stable characteristics and high performance by implanting the ions into the silicon layer using an ion implantation method and then annealing the silicon layer to form metal-silicide.
摘要翻译： 提供了一种肖特基势垒隧道晶体管及其制造方法。 该方法包括以下步骤：制备衬底; 在衬底上形成有源硅层; 在所述硅层的区域上形成栅极绝缘层; 在栅极绝缘层上形成栅电极; 将离子注入未形成栅极绝缘层的硅层中; 并对离子注入的硅层退火。 因此，通过使用离子注入法将离子注入硅层，然后使硅层退火以形成金属硅化物，可以制造具有稳定特性和高性能的肖特基势垒隧道晶体管。
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2.发明申请SB-MOSFET (Schottky barrier metal-oxide-semiconductor field effect transistor) with low barrier height and fabricating method thereof 审中-公开具有低势垒高度的SB-MOSFET（肖特基势垒金属氧化物半导体场效应晶体管）及其制造方法公开(公告)号：US20070187758A1
公开(公告)日：2007-08-16
申请号：US11635179
申请日：2006-12-07
IPC分类号： H01L27/12
CPC分类号： H01L29/458 , H01L29/045 , H01L29/66772 , H01L29/7839 , H01L29/78696
摘要： Provided is a high-performance n-type Schottky barrier tunneling transistor with low Schottky barrier for electrons due to a Schottky junction formed on a Si (111) surface created through anisotropic etching. The Schottky barrier tunneling transistor includes: a silicon on insulator (SOI) substrate; a source and a drain formed on the SOI substrate; a channel formed between the source and the drain; a gate insulating layer and a gate electrode sequentially formed on the channel; and a sidewall insulating layer formed on both sidewalls of the gate insulating layer and the gate electrode, wherein an interface between the source/drain and the channel is on a Si (111) in the channel, and the source and drain consists of metal silicide through silicidation with a predetermined metal and forms a Schottky junction with the silicon channel.
摘要翻译： 提供了由于通过各向异性蚀刻形成的Si（111）表面上形成的肖特基结，具有用于电子的肖特基势垒低的高性能n型肖特基势垒隧道晶体管。 肖特基势垒隧道晶体管包括：绝缘体上硅（SOI）衬底; 在SOI衬底上形成的源极和漏极; 在源极和漏极之间形成的沟道; 顺序地形成在沟道上的栅极绝缘层和栅电极; 以及形成在栅极绝缘层和栅极电极的两个侧壁上的侧壁绝缘层，其中源极/漏极和沟道之间的界面在通道中的Si（111）上，并且源极和漏极由金属硅化物 通过与预定金属的硅化，并与硅通道形成肖特基结。
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3.发明申请公开(公告)号：US20070034951A1
公开(公告)日：2007-02-15
申请号：US11485837
申请日：2006-07-13
IPC分类号： H01L27/12 , H01L27/01 , H01L31/0392
CPC分类号： H01L29/47 , H01L29/458 , H01L29/4908 , H01L29/66545 , H01L29/66772 , H01L29/7839
摘要： Provided are a Schottky barrier tunnel transistor and a method of manufacturing the same that are capable of minimizing leakage current caused by damage to a gate sidewall of the Schottky barrier tunnel transistor using a Schottky tunnel barrier naturally formed at a semiconductor-metal junction as a tunnel barrier. The method includes the steps of: forming a semiconductor channel layer on an insulating substrate; forming a dummy gate on the semiconductor channel layer; forming a source and a drain at both sides of the dummy gate on the insulating substrate; removing the dummy gate; forming an insulating layer on a sidewall from which the dummy gate is removed; and forming an actual gate in a space from which the dummy gate is removed. In manufacturing the Schottky barrier tunnel transistor using the dummy gate, it is possible to form a high-k dielectric gate insulating layer and a metal gate, and stable characteristics in silicidation of the metal layer having very strong reactivity can be obtained.
摘要翻译： 提供了一种肖特基势垒隧道晶体管及其制造方法，该晶体管能够使用在半导体 - 金属结上自然形成的肖特基隧道势垒作为隧道来最小化对肖特基势垒隧道晶体管的栅极侧壁的损坏所造成的漏电流 屏障。 该方法包括以下步骤：在绝缘基板上形成半导体沟道层; 在半导体沟道层上形成虚拟栅极; 在绝缘基板上的虚拟栅极的两侧形成源极和漏极; 去除虚拟门; 在去除所述伪栅极的侧壁上形成绝缘层; 并且在从其中去除虚拟栅极的空间中形成实际栅极。 在使用伪栅极制造肖特基势垒隧道晶体管时，可以形成高k电介质栅极绝缘层和金属栅极，并且可以获得具有非常强反应性的金属层的硅化物的稳定特性。
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