公开(公告)号：US20100112213A1

公开(公告)日：2010-05-06

申请号：US12610708

申请日：2009-11-02

申请人： Motonori NAKAMURA ,  Yoshinobu MORI ,  Takeshi MASUDA ,  Hidenori KOBAYASHI ,  Kazuhiro NARAHARA

发明人： Motonori NAKAMURA ,  Yoshinobu MORI ,  Takeshi MASUDA ,  Hidenori KOBAYASHI ,  Kazuhiro NARAHARA

IPC分类号： C23C16/46 ,  C23C16/458 ,  C23C16/00

CPC分类号： C23C16/4586 ,  C23C16/46 ,  C30B25/10 ,  C30B25/12

摘要： In a manufacturing apparatus for manufacturing an epitaxial wafer with a wafer being mounted substantially concentrically with a susceptor, a center rod is provided to extend in an up-and-down direction on a side of a non-mounting surface of the susceptor so that its upper end is adjacent to the center of the susceptor. With this arrangement, part of radiation light irradiated toward the susceptor is diffusely reflected by the center rod before reaching the central portion of the susceptor, thereby reducing the amount of the radiation light irradiated to the central portion of the susceptor as well as lowering the temperature of the portion. Since the center rod and the susceptor are not in surface contact, the center rod does not take the heat from the susceptor, thereby suppressing the temperature from decreasing locally at the central portion of the susceptor.

摘要翻译： 在用于制造具有与基座大致同心地安装的晶片的外延晶片的制造装置中，设置中心杆，以在基座的非安装表面的一侧沿上下方向延伸， 上端邻近基座的中心。 利用这种布置，朝向基座照射的一部分辐射光在到达基座的中心部分之前被中心棒漫反射，从而减少了照射到基座的中心部分的辐射光的量以及降低温度 的部分。 由于中心杆和基座不与表面接触，所以中心杆不会从基座受热，从而抑制温度在基座的中心部分局部减小。

公开(公告)号：US20140116340A1

公开(公告)日：2014-05-01

申请号：US13762176

申请日：2013-02-07

申请人： Yoshinobu MORI ,  Akira OKABE

发明人： Yoshinobu MORI ,  Akira OKABE

IPC分类号： C23C16/46

CPC分类号： C23C16/46 ,  C23C16/45502 ,  C23C16/4585 ,  C23C16/481 ,  C30B25/14 ,  C30B29/06

摘要： An epitaxial growth device comprises a reaction chamber defined by a substrate setting portion, a ceiling board and a sidewall portion, a heating member and reactant gas-introduction member. The ceiling board is fixed to a ring-like support portion having a through-hole as viewed from above. A diameter of the through-hole becomes reduced gradually toward a substrate-side. The ceiling board is fixed to an end portion of the substrate-side of the through-hole.

摘要翻译： 外延生长装置包括由基板设置部分，顶板和侧壁部分限定的反应室，加热部件和反应气体导入部件。 天花板固定到具有从上方观察的通孔的环状支撑部分。 通孔的直径朝向基板侧逐渐减小。 顶板固定在通孔的基板侧的端部。