公开(公告)号：US20040088157A1

公开(公告)日：2004-05-06

申请号：US10283652

申请日：2002-10-30

Applicant: Motorola, Inc.

Inventor： Lawrence E. Lach ,  Thomas Michael Tirpak ,  Maria B. Thompson

IPC: G06F017/27

CPC classification number: G06F17/2785

Abstract: Textual documents are readily classified and/or characterized with respect to other documents by determining a corresponding level of semantic distance between such documents. For example, particular parts of speech are identified, and those words in the documents that correspond to such parts of speech are identified and extracted. Matches of such wording between the documents permit identification of a given corresponding semantic distance value. When no matches occur (or when otherwise desired), synonyms for such words can be used to ascertain more distant semantic relationships. The process can be repeated in an iterative fashion using ever-deepening tiers of synonyms.

Abstract translation: 文本文件通过确定这些文档之间的相应级别的语义距离，可以容易地对其他文档进行分类和/或表征。 例如，识别特定的语音部分，并且识别和提取对应于这些语音部分的文档中的那些单词。 文件之间的这种措辞的匹配允许识别给定的对应语义距离值。 当不发生任何匹配（或者如果不需要）时，可以使用这样的单词的同义词来确定更远的语义关系。 该过程可以使用不断深化的同义词层次以迭代方式重复。

公开(公告)号：US20030141524A1

公开(公告)日：2003-07-31

申请号：US10057367

申请日：2002-01-25

Applicant: Motorola Inc.

Inventor： Steven M. Scheifers ,  Daniel R. Gamota ,  Paul W. Brazis JR. ,  Jie Zhang ,  Lawrence E. Lach

IPC: H01L029/76 ,  H01L029/94 ,  H01L031/062 ,  H01L031/113 ,  H01L031/119

CPC classification number: H01L51/0545 ,  H01L21/31683 ,  H01L51/0021 ,  H01L51/0512

Abstract: A semiconductor device comprising a flexible or rigid substrate (11) having a gate electrode (21), a source electrode (61 and 101), and a drain electrode (62 and 102) formed thereon and organic semiconductor material (51, 81, and 91) disposed at least partially thereover. The gate electrode (21) has a thin dielectric layer 41 formed thereabout through oxidation. In many of the embodiments, any of the above elements can be formed through contact or non-contact printing. Sizing of the resultant device can be readily scaled to suit various needs.

Abstract translation: 一种半导体器件，包括具有栅电极（21），源电极（61和101）和形成在其上的漏电极（62和102）的柔性或刚性基板（11）和有机半导体材料（51,81和 91）至少部分地设置在其上。 栅电极（21）具有通过氧化形成在其周围的薄介电层41。 在许多实施例中，可以通过接触或非接触印刷形成任何上述元件。 可以容易地缩放所得到的装置的尺寸以适应各种需要。

公开(公告)号：US20030122119A1

公开(公告)日：2003-07-03

申请号：US10034337

申请日：2001-12-28

Applicant: Motorola, Inc.

Inventor： Lawrence E. Lach ,  Steven M. Scheifers ,  Jie Zhang ,  Daniel R. Gamota ,  Paul W. Brazis JR.

IPC: H01L035/24

CPC classification number: H01L51/0508 ,  H01L51/0004 ,  H01L51/0005 ,  H01L51/0021

Abstract: A semiconductor device comprising a flexible or rigid substrate (10) having a gate electrode (11), a source electrode (12), and a drain electrode (13) formed thereon and organic semiconductor material (14) disposed at least partially thereover. With appropriate selection of material, the gate electrode (11) will form a Schottky junction and an ohmic contact will form between the organic semiconductor material (14) and each of the source electrode (12) and drain electrode (13). In many of the embodiments, any of the above elements can be formed through contact or non-contact printing. Sizing of the resultant device can be readily scaled to suit various needs.

Abstract translation: 一种半导体器件，包括具有形成在其上的栅电极（11），源电极（12）和漏电极（13）的柔性或刚性衬底（10）和其上至少部分设置的有机半导体材料（14）。 通过适当选择材料，栅电极（11）将形成肖特基结，在有机半导体材料（14）与源电极（12）和漏电极（13）之间形成欧姆接触。 在许多实施例中，可以通过接触或非接触印刷形成任何上述元件。 可以容易地缩放所得到的装置的尺寸以适应各种需要。