公开(公告)号：US20030013219A1

公开(公告)日：2003-01-16

申请号：US09903743

申请日：2001-07-13

申请人： MOTOROLA, INC.

发明人： Aroon V. Tungare ,  George T. Valliath ,  Daniel R. Gamota

IPC分类号： H01L021/00 ,  H01L027/15 ,  H01L031/062 ,  H01L033/00 ,  H01L031/12

CPC分类号： H01S5/0261 ,  H01L27/15 ,  H01S5/026 ,  H01S5/0265 ,  H01S5/06243 ,  H01S5/183

摘要： High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. An accommodating buffer layer comprises a layer of monocrystalline oxide spaced apart from a silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline material layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer. Electro-optic structures may be integrally provided with such semiconductor structures, which semiconductor structures may also include light-emitting devices and control circuitry.

摘要翻译： 通过形成用于生长单晶层的柔性衬底，可以将单晶材料的高质量外延层生长在覆盖单晶衬底（例如大硅晶片）上。 容纳缓冲层包括通过硅氧化物的非晶界面层与硅晶片间隔开的单晶氧化物层。 非晶界面层消耗应变并允许高质量单晶氧化物容纳缓冲层的生长。 容纳缓冲层与下面的硅晶片和上覆的单晶材料层晶格匹配。 通过非晶界面层处理容纳缓冲层和底层硅衬底之间的任何晶格失配。 电光结构可以与这种半导体结构一体地设置，该半导体结构还可以包括发光器件和控制电路。

公开(公告)号：US20030122120A1

公开(公告)日：2003-07-03

申请号：US10034645

申请日：2001-12-28

申请人： Motorola, Inc.

发明人： Paul W. Brazis JR. ,  Jie Zhang ,  Daniel R. Gamota ,  Krishna Kalyansundaram

IPC分类号： H01L035/24 ,  H01L051/00

CPC分类号： H01L51/0541 ,  H01L51/0545

摘要： A semiconductor device comprising a flexible or rigid substrate (10) having a gate electrode (11) formed thereon with a source electrode (14) and a drain electrode (15) overlying the gate electrode (11) and organic semiconductor material (16) disposed at least partially thereover. The source electrode (14) and the drain electrode (15) each have a non-linear boundary segment that effectively extends the channel width between these two electrodes to thereby increase the current handling capability of the resultant device. In many of the embodiments, any of the above elements can be formed through contact or non-contact printing. Sizing of the resultant device can be readily scaled to suit various needs.

摘要翻译： 一种半导体器件，包括其上形成有栅电极（11）的柔性或刚性衬底（10），其上设置有源电极（14）和覆盖栅电极（11）的漏极电极（15）和设置有机半导体材料 至少部分在那里。 源电极（14）和漏电极（15）各自具有有效地延伸这两个电极之间的沟道宽度的非线性边界段，从而增加所得器件的电流处理能力。 在许多实施例中，可以通过接触或非接触印刷形成任何上述元件。 可以容易地缩放所得到的装置的尺寸以适应各种需要。

公开(公告)号：US20030141524A1

公开(公告)日：2003-07-31

申请号：US10057367

申请日：2002-01-25

申请人： Motorola Inc.

发明人： Steven M. Scheifers ,  Daniel R. Gamota ,  Paul W. Brazis JR. ,  Jie Zhang ,  Lawrence E. Lach

IPC分类号： H01L029/76 ,  H01L029/94 ,  H01L031/062 ,  H01L031/113 ,  H01L031/119

CPC分类号： H01L51/0545 ,  H01L21/31683 ,  H01L51/0021 ,  H01L51/0512

摘要： A semiconductor device comprising a flexible or rigid substrate (11) having a gate electrode (21), a source electrode (61 and 101), and a drain electrode (62 and 102) formed thereon and organic semiconductor material (51, 81, and 91) disposed at least partially thereover. The gate electrode (21) has a thin dielectric layer 41 formed thereabout through oxidation. In many of the embodiments, any of the above elements can be formed through contact or non-contact printing. Sizing of the resultant device can be readily scaled to suit various needs.

摘要翻译： 一种半导体器件，包括具有栅电极（21），源电极（61和101）和形成在其上的漏电极（62和102）的柔性或刚性基板（11）和有机半导体材料（51,81和 91）至少部分地设置在其上。 栅电极（21）具有通过氧化形成在其周围的薄介电层41。 在许多实施例中，可以通过接触或非接触印刷形成任何上述元件。 可以容易地缩放所得到的装置的尺寸以适应各种需要。

公开(公告)号：US20030122119A1

公开(公告)日：2003-07-03

申请号：US10034337

申请日：2001-12-28

申请人： Motorola, Inc.

发明人： Lawrence E. Lach ,  Steven M. Scheifers ,  Jie Zhang ,  Daniel R. Gamota ,  Paul W. Brazis JR.

IPC分类号： H01L035/24

CPC分类号： H01L51/0508 ,  H01L51/0004 ,  H01L51/0005 ,  H01L51/0021

摘要： A semiconductor device comprising a flexible or rigid substrate (10) having a gate electrode (11), a source electrode (12), and a drain electrode (13) formed thereon and organic semiconductor material (14) disposed at least partially thereover. With appropriate selection of material, the gate electrode (11) will form a Schottky junction and an ohmic contact will form between the organic semiconductor material (14) and each of the source electrode (12) and drain electrode (13). In many of the embodiments, any of the above elements can be formed through contact or non-contact printing. Sizing of the resultant device can be readily scaled to suit various needs.

摘要翻译： 一种半导体器件，包括具有形成在其上的栅电极（11），源电极（12）和漏电极（13）的柔性或刚性衬底（10）和其上至少部分设置的有机半导体材料（14）。 通过适当选择材料，栅电极（11）将形成肖特基结，在有机半导体材料（14）与源电极（12）和漏电极（13）之间形成欧姆接触。 在许多实施例中，可以通过接触或非接触印刷形成任何上述元件。 可以容易地缩放所得到的装置的尺寸以适应各种需要。

公开(公告)号：US20030006417A1

公开(公告)日：2003-01-09

申请号：US09897059

申请日：2001-07-03

申请人： MOTOROLA, INC.

发明人： Tomasz L. Klosowiak ,  Daniel R. Gamota ,  Robert B. Lempkowski

IPC分类号： H01L027/15 ,  H01L031/12 ,  H01L033/00

CPC分类号： G02B26/0858 ,  H01L41/319

摘要： High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. An accommodating buffer layer comprises a layer of monocrystalline oxide spaced apart from a silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline material layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer. In addition, formation of a compliant substrate may include utilizing surfactant enhanced epitaxy, epitaxial growth of single crystal silicon onto single crystal oxide, and epitaxial growth of Zintl phase materials. Further, various shaped piezoelectric structures having optical surfaces may be disposed on the overlying monocrystalline layer for optical switching and controlled manipulation of light signals.

摘要翻译： 通过形成用于生长单晶层的柔性衬底，可以将单晶材料的高质量外延层生长在覆盖单晶衬底（例如大硅晶片）上。 容纳缓冲层包括通过硅氧化物的非晶界面层与硅晶片间隔开的单晶氧化物层。 非晶界面层消耗应变并允许高质量单晶氧化物容纳缓冲层的生长。 容纳缓冲层与下面的硅晶片和上覆的单晶材料层晶格匹配。 通过非晶界面层处理容纳缓冲层和底层硅衬底之间的任何晶格失配。 此外，顺应性衬底的形成可以包括利用表面活性剂增强的外延，将单晶硅外延生长到单晶氧化物上，以及Zintl相材料的外延生长。 此外，具有光学表面的各种成形的压电结构可以设置在上覆的单晶层上，用于光信号的光学切换和受控操纵。