公开(公告)号：US20030122120A1

公开(公告)日：2003-07-03

申请号：US10034645

申请日：2001-12-28

Applicant: Motorola, Inc.

Inventor： Paul W. Brazis JR. ,  Jie Zhang ,  Daniel R. Gamota ,  Krishna Kalyansundaram

IPC: H01L035/24 ,  H01L051/00

CPC classification number: H01L51/0541 ,  H01L51/0545

Abstract: A semiconductor device comprising a flexible or rigid substrate (10) having a gate electrode (11) formed thereon with a source electrode (14) and a drain electrode (15) overlying the gate electrode (11) and organic semiconductor material (16) disposed at least partially thereover. The source electrode (14) and the drain electrode (15) each have a non-linear boundary segment that effectively extends the channel width between these two electrodes to thereby increase the current handling capability of the resultant device. In many of the embodiments, any of the above elements can be formed through contact or non-contact printing. Sizing of the resultant device can be readily scaled to suit various needs.

Abstract translation: 一种半导体器件，包括其上形成有栅电极（11）的柔性或刚性衬底（10），其上设置有源电极（14）和覆盖栅电极（11）的漏极电极（15）和设置有机半导体材料 至少部分在那里。 源电极（14）和漏电极（15）各自具有有效地延伸这两个电极之间的沟道宽度的非线性边界段，从而增加所得器件的电流处理能力。 在许多实施例中，可以通过接触或非接触印刷形成任何上述元件。 可以容易地缩放所得到的装置的尺寸以适应各种需要。

公开(公告)号：US20030141524A1

公开(公告)日：2003-07-31

申请号：US10057367

申请日：2002-01-25

Applicant: Motorola Inc.

Inventor： Steven M. Scheifers ,  Daniel R. Gamota ,  Paul W. Brazis JR. ,  Jie Zhang ,  Lawrence E. Lach

IPC: H01L029/76 ,  H01L029/94 ,  H01L031/062 ,  H01L031/113 ,  H01L031/119

CPC classification number: H01L51/0545 ,  H01L21/31683 ,  H01L51/0021 ,  H01L51/0512

Abstract: A semiconductor device comprising a flexible or rigid substrate (11) having a gate electrode (21), a source electrode (61 and 101), and a drain electrode (62 and 102) formed thereon and organic semiconductor material (51, 81, and 91) disposed at least partially thereover. The gate electrode (21) has a thin dielectric layer 41 formed thereabout through oxidation. In many of the embodiments, any of the above elements can be formed through contact or non-contact printing. Sizing of the resultant device can be readily scaled to suit various needs.

Abstract translation: 一种半导体器件，包括具有栅电极（21），源电极（61和101）和形成在其上的漏电极（62和102）的柔性或刚性基板（11）和有机半导体材料（51,81和 91）至少部分地设置在其上。 栅电极（21）具有通过氧化形成在其周围的薄介电层41。 在许多实施例中，可以通过接触或非接触印刷形成任何上述元件。 可以容易地缩放所得到的装置的尺寸以适应各种需要。

公开(公告)号：US20030122119A1

公开(公告)日：2003-07-03

申请号：US10034337

申请日：2001-12-28

Applicant: Motorola, Inc.

Inventor： Lawrence E. Lach ,  Steven M. Scheifers ,  Jie Zhang ,  Daniel R. Gamota ,  Paul W. Brazis JR.

IPC: H01L035/24

CPC classification number: H01L51/0508 ,  H01L51/0004 ,  H01L51/0005 ,  H01L51/0021

Abstract: A semiconductor device comprising a flexible or rigid substrate (10) having a gate electrode (11), a source electrode (12), and a drain electrode (13) formed thereon and organic semiconductor material (14) disposed at least partially thereover. With appropriate selection of material, the gate electrode (11) will form a Schottky junction and an ohmic contact will form between the organic semiconductor material (14) and each of the source electrode (12) and drain electrode (13). In many of the embodiments, any of the above elements can be formed through contact or non-contact printing. Sizing of the resultant device can be readily scaled to suit various needs.

Abstract translation: 一种半导体器件，包括具有形成在其上的栅电极（11），源电极（12）和漏电极（13）的柔性或刚性衬底（10）和其上至少部分设置的有机半导体材料（14）。 通过适当选择材料，栅电极（11）将形成肖特基结，在有机半导体材料（14）与源电极（12）和漏电极（13）之间形成欧姆接触。 在许多实施例中，可以通过接触或非接触印刷形成任何上述元件。 可以容易地缩放所得到的装置的尺寸以适应各种需要。