利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

12 条记录 (耗时 0.047 秒)

    LOW POWER OPTICAL NETWORK TERMINAL AND METHOD OF OPERATING LOW POWER OPTICAL NETWORK TERMINAL
    6.
    发明申请
    LOW POWER OPTICAL NETWORK TERMINAL AND METHOD OF OPERATING LOW POWER OPTICAL NETWORK TERMINAL 审中-公开
    低功率光网络终端和操作低功率光网络终端的方法

    公开(公告)号：US20130156426A1

    公开(公告)日：2013-06-20

    申请号：US13596330

    申请日：2012-08-28

    申请人： Geun Yong KIM ,  Sung Chang Kim ,  Mun Seob Lee ,  Hark Yoo ,  Young Suk Lee ,  Dong Soo Lee

    发明人： Geun Yong KIM ,  Sung Chang Kim ,  Mun Seob Lee ,  Hark Yoo ,  Young Suk Lee ,  Dong Soo Lee

    IPC分类号： H04B10/20

    CPC分类号： H04B10/272 ,  H04Q11/0067 ,  H04Q11/0071 ,  H04Q2011/0064 ,  H04Q2011/0079

    摘要： Disclosed is a low power optical network terminal (ONT) and a method of operating the low power ONT. The low power ONT may include a network media access control (MAC) processing unit to transmit and receive traffic to and from an optical line terminal (OLT), a switching unit to receive the traffic transmitted from the network MAC processing unit and transmit the traffic to a subscriber terminal and to receive the traffic from the subscriber terminal and transmit the traffic to the OLT, and a control unit to control traffic transmission from the network MAC processing unit when a power mode is a low power mode.

    摘要翻译： 公开了一种低功率光网络终端（ONT）和低功率ONT的操作方法。 低功率ONT可以包括用于向和从光线路终端（OLT）发送和接收业务的网络媒体接入控制（MAC）处理单元，用于接收从网络MAC处理单元发送的业务并发送业务的交换单元 向用户终端接收来自用户终端的业务，并将业务发送到OLT，以及控制单元，用于在电力模式为低功率模式时控制来自网络MAC处理单元的业务传输。

    Plasma enhanced chemical vapor deposition apparatus
    10.
    发明授权
    Plasma enhanced chemical vapor deposition apparatus 有权
    等离子体增强化学气相沉积装置

    公开(公告)号：US06772710B2

    公开(公告)日：2004-08-10

    申请号：US10227785

    申请日：2002-08-26

    申请人： Young Suk Lee

    发明人： Young Suk Lee

    IPC分类号： C23C1600

    CPC分类号： C23C16/45563 ,  C23C16/30 ,  C23C16/45589 ,  C23C16/509

    摘要： In a PECVD (plasma enhanced chemical vapor deposition) apparatus including a reaction chamber; plural susceptors installed inside the reaction chamber and horizontally mounted with a wafer respectively; a heating means for heating the susceptors; a power supply unit installed outside of the reaction chamber; a plasma electrode receiving RF power from the power supply unit, generating and maintaining plasma inside the reaction chamber; and a rotation jet spray having two spray injectors horizontally rotating and supplying gas inside the reaction chamber, a thin film is deposited by supplying BTMSM vapor and oxygen retaining gas through the spray injector, supplying hydrogen retaining gas through the other spray injector and horizontally rotating the spray injectors in the supply. Herein, a pressure in the reaction chamber is in the range of 0.1 Torr˜1 Torr, the wafer is heated at 25° C.˜400° C., and RF power in the range of 100 W˜2000 W is applied.

    摘要翻译： 在包括反应室的PECVD（等离子体增强化学气相沉积）装置中; 多个感受体安装在反应室内，分别水平安装在晶片上; 用于加热感受体的加热装置; 设置在反应室外部的电源单元; 从所述电源单元接收RF功率的等离子体电极，产生并保持所述反应室内的等离子体; 以及具有水平旋转并且在反应室内供应气体的两个喷射喷射器的旋转喷射喷射器，通过经由喷射喷射器提供BTMSM蒸汽和氧气保持气体来沉积薄膜，通过另一个喷射喷射器供应氢气保留气体并水平旋转 喷油器供应。 这里，反应室内的压力为0.1Torr〜1Torr，将晶片加热至25℃〜400℃，施加100W〜2000W范围内的RF功率。