公开(公告)号：US6114085A

公开(公告)日：2000-09-05

申请号：US195057

申请日：1998-11-18

申请人： Munirathna Padmanaban ,  Ralph R. Dammel ,  Stanley A. Ficner ,  Joseph E. Oberlander ,  John P. Sagan

发明人： Munirathna Padmanaban ,  Ralph R. Dammel ,  Stanley A. Ficner ,  Joseph E. Oberlander ,  John P. Sagan

IPC分类号： G03F7/11 ,  G03F7/09 ,  H01L21/027 ,  G03F7/004

CPC分类号： G03F7/091

摘要： The present invention relates to a novel antireflecting coating composition, where the composition comprises a polymer, thermal acid generator and a solvent composition. The invention further comprises processes for the use of such a composition in photolithography. The composition strongly absorbs radiation ranging from about 130 nm (nanometer) to about 250 nm.

摘要翻译： 本发明涉及新型抗反射涂料组合物，其中组合物包含聚合物，热酸产生剂和溶剂组合物。 本发明还包括在光刻中使用这种组合物的方法。 该组合物强烈地吸收约130nm（纳米）至约250nm的辐射。

公开(公告)号：US06372414B1

公开(公告)日：2002-04-16

申请号：US09268438

申请日：1999-03-12

申请人： Randy D. Redd ,  Ralph R. Dammel ,  John P. Sagan ,  Mark A. Spak

发明人： Randy D. Redd ,  Ralph R. Dammel ,  John P. Sagan ,  Mark A. Spak

IPC分类号： G03F726

CPC分类号： G03F7/322 ,  G03F7/168 ,  G03F7/38

摘要： The present invention relates to a process for providing a pattern on a substrate for use in a metal lift-off process, the process comprising: 1) coating a substrate with a liquid positive photoresist; 2) soft baking the coated substrate; 3) contacting the substrate with an aqueous alkaline developer containing from about 0.005 volume percent to about 0.05 volume percent of an alkylene glycol alkyl ether; 4) placing a patterned mask over the substrate; 5) exposing the substrate through the mask; 6) post exposure baking the substrate; 7) optionally, flood exposing the substrate; and 8) developing the substrate with an aqueous alkaline developer. The invention also relates to a novel developer solution of an ammonium hydroxide containing from about 0.005 volume percent to about 0.5 volume percent of an alkylene glycol alkyl ether and to a process for producing such a novel developer solution.

摘要翻译： 本发明涉及在用于金属剥离工艺的基板上提供图案的方法，该方法包括：1）用液体正性光致抗蚀剂涂覆基材; 2）软化涂层基材; 3）使底物与含有约0.005体积％至约0.05体积％的亚烷基二醇烷基醚的含水碱性显影剂接触; 4）将图案化掩模放置在衬底上; 5）使基板通过掩模曝光; 6）曝光后烘烤基材; 7）任选地，泛化暴露基板; 和8）用含水碱性显影剂显影底物。 本发明还涉及含有约0.005体积％至约0.5体积％的亚烷基二醇烷基醚的氢氧化铵的新显影剂溶液以及用于制备这种新型显影剂溶液的方法。