公开(公告)号：US06372414B1

公开(公告)日：2002-04-16

申请号：US09268438

申请日：1999-03-12

申请人： Randy D. Redd ,  Ralph R. Dammel ,  John P. Sagan ,  Mark A. Spak

发明人： Randy D. Redd ,  Ralph R. Dammel ,  John P. Sagan ,  Mark A. Spak

IPC分类号： G03F726

CPC分类号： G03F7/322 ,  G03F7/168 ,  G03F7/38

摘要： The present invention relates to a process for providing a pattern on a substrate for use in a metal lift-off process, the process comprising: 1) coating a substrate with a liquid positive photoresist; 2) soft baking the coated substrate; 3) contacting the substrate with an aqueous alkaline developer containing from about 0.005 volume percent to about 0.05 volume percent of an alkylene glycol alkyl ether; 4) placing a patterned mask over the substrate; 5) exposing the substrate through the mask; 6) post exposure baking the substrate; 7) optionally, flood exposing the substrate; and 8) developing the substrate with an aqueous alkaline developer. The invention also relates to a novel developer solution of an ammonium hydroxide containing from about 0.005 volume percent to about 0.5 volume percent of an alkylene glycol alkyl ether and to a process for producing such a novel developer solution.

摘要翻译： 本发明涉及在用于金属剥离工艺的基板上提供图案的方法，该方法包括：1）用液体正性光致抗蚀剂涂覆基材; 2）软化涂层基材; 3）使底物与含有约0.005体积％至约0.05体积％的亚烷基二醇烷基醚的含水碱性显影剂接触; 4）将图案化掩模放置在衬底上; 5）使基板通过掩模曝光; 6）曝光后烘烤基材; 7）任选地，泛化暴露基板; 和8）用含水碱性显影剂显影底物。 本发明还涉及含有约0.005体积％至约0.5体积％的亚烷基二醇烷基醚的氢氧化铵的新显影剂溶液以及用于制备这种新型显影剂溶液的方法。

公开(公告)号：US06391800B1

公开(公告)日：2002-05-21

申请号：US09439177

申请日：1999-11-12

申请人： Randy D. Redd ,  Lawrence S. Klingbeil

发明人： Randy D. Redd ,  Lawrence S. Klingbeil

IPC分类号： H01L2131

CPC分类号： H01L21/0274 ,  G03F7/16 ,  G03F7/162 ,  H01L21/312

摘要： A method for patterning a substrate having a surface with high aspect ratio topography with a photoresist is described. Specifically the surface of a semiconductor substrate is pre-wetted with a solvent solution to form a liquid solvent film. An additional amount of the solvent solution is added to form a solvent puddle on the liquid solvent film. Photoresist is dispensed onto the solvent puddle for a sufficient time and in a sufficient amount to allow diffusion of the photoresist and the solvent puddle into the openings defined in the topography of the substrate. The solvent solution in and on the surface of the openings defined in the substrate from the pre-wetting step is replaced with the photoresist by facilitating diffusion of the photoresist into the topography openings. A photoresist layer is then cast in a predetermined thickness on the surface of the substrate.

摘要翻译： 描述了用光刻胶对具有高纵横比拓扑的表面进行图案化的方法。 具体地说，将半导体衬底的表面用溶剂溶液预润湿以形成液体溶剂膜。 加入额外量的溶剂溶液以在液体溶剂膜上形成溶剂池。 将光致抗蚀剂分配到溶剂池上足够的时间并且足够的量以使光致抗蚀剂和溶剂熔池扩散到限定在衬底的形貌中的开口中。 通过促进光致抗蚀剂扩散到形貌开口中，通过预润湿步骤限定在基底中的开口中和表面上的溶剂溶液被光致抗蚀剂代替。 然后将光致抗蚀剂层以预定厚度浇铸在基材的表面上。

公开(公告)号：US06780703B2

公开(公告)日：2004-08-24

申请号：US10228711

申请日：2002-08-27

申请人： Randy D. Redd

发明人： Randy D. Redd

IPC分类号： H01L218234

CPC分类号： H01L29/66522 ,  H01L21/30612 ,  H01L29/66878

摘要： An etch stop layer (12) is formed over a semiconductor substrate (10). An epitaxial layer (14) is formed overlying the etch stop layer (12). The combination of the epitaxial layer (14), etch stop layer (12), and semiconductor substrate (10) form a composite substrate (16). The composite substrate (16) is processed to fabricate a semiconductor device (21) over the epitaxial layer (14). Then the composite substrate (16) is mounted to a wafer carrier (32) to expose the semiconductor substrate (10) and the semiconductor substrate (10) is removed to substantially define a semiconductor device substrate (50) that comprises the epitaxial layer (14).

摘要翻译： 在半导体衬底（10）上形成蚀刻停止层（12）。 形成覆盖在蚀刻停止层（12）上的外延层（14）。 外延层（14），蚀刻停止层（12）和半导体衬底（10）的组合形成复合衬底（16）。 处理复合衬底（16）以在外延层（14）上制造半导体器件（21）。 然后将复合衬底（16）安装到晶片载体（32）以暴露半导体衬底（10），并且去除半导体衬底（10）以基本上限定包含外延层（14）的半导体器件衬底（50） ）。

公开(公告)号：US06939781B2

公开(公告)日：2005-09-06

申请号：US10609106

申请日：2003-06-27

申请人： Randy D. Redd ,  Paul A. Fisher ,  Olin L. Hartin ,  Lawrence S. Klingbeil ,  Ellen Lan ,  Hsin-Hua P. Li ,  Charles E. Weitzel

发明人： Randy D. Redd ,  Paul A. Fisher ,  Olin L. Hartin ,  Lawrence S. Klingbeil ,  Ellen Lan ,  Hsin-Hua P. Li ,  Charles E. Weitzel

IPC分类号： H01L21/338 ,  H01L29/812 ,  H01L21/76

CPC分类号： H01L29/66871 ,  H01L29/402 ,  H01L29/42316 ,  H01L29/812

摘要： In one embodiment of the invention, a semiconductor component includes a semiconductor substrate (110), a first dielectric layer (120) above the semiconductor substrate, a first ohmic contact region (410) and a second ohmic contact region (420) above the semiconductor substrate, a gate electrode (1120) above the semiconductor substrate and between the first ohmic contact region and the second ohmic contact region, a field plate (210) above the first dielectric layer and between the gate electrode and the second ohmic contact region, a second dielectric layer (310) above the field plate, the first dielectric layer, the first ohmic contact region, and the second ohmic contact region, and a third dielectric layer (910) between the gate electrode and the field plate and not located above the gate electrode or the field plate.

摘要翻译： 在本发明的一个实施例中，半导体部件包括半导体衬底（110），半导体衬底上方的第一介电层（120），半导体上方的第一欧姆接触区（410）和第二欧姆接触区（420） 衬底，半导体衬底之上和第一欧姆接触区域和第二欧姆接触区域之间的栅极电极（1120），在第一介电层上方以及栅电极和第二欧姆接触区域之间的场板（210）， 位于场板上方的第二电介质层（310），第一电介质层，第一欧姆接触区域和第二欧姆接触区域，以及栅电极和场板之间的第三介电层（910） 栅电极或场板。