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公开(公告)号:US20140368401A1
公开(公告)日:2014-12-18
申请号:US14475724
申请日:2014-09-03
Applicant: Murata Manufacturing Co., Ltd.
Inventor: Takashi MIYAKE , Koji NOSAKA , Ryo NAKAGAWA , Haruki KYOUYA
CPC classification number: H03H9/725 , H01Q1/50 , H03H9/0038 , H03H9/14576 , H03H9/542 , H03H9/703 , H03H9/706 , H03H9/72 , H04B1/50 , H04B1/525 , H04L5/14
Abstract: A communication device is provided with a band elimination filter that has one end connected to an antenna terminal, and a first multiplexer that is connected to the other end of the band elimination filter. The band elimination filter is configured to eliminate signals of a frequency band that is different from the frequencies of signals transmitted and received in the first multiplexer, and is configured from a filter circuit that includes a bulk wave element.
Abstract translation: 通信装置设置有一端连接到天线端子的带除滤波器,以及与带除滤波器的另一端连接的第一多路复用器。 带除滤波器被配置为消除与第一多路复用器中发送和接收的信号的频率不同的频带的信号,并且由包括体波元件的滤波器电路配置。
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公开(公告)号:US20250150056A1
公开(公告)日:2025-05-08
申请号:US19013107
申请日:2025-01-08
Applicant: Murata Manufacturing Co., Ltd.
Inventor: Yasumasa TANIGUCHI , Haruki KYOUYA , Daisuke TAMAZAKI
Abstract: An acoustic wave device includes a piezoelectric substrate and an interdigital transducer electrode on the piezoelectric substrate. The interdigital transducer electrode includes a close-contact layer on the piezoelectric substrate, a Cu—Al alloy layer on the close-contact layer, and an Al electrode layer on the Cu—Al alloy layer and having a weight-percentage concentration, in % by weight, of Al of greater than about 50% by weight. The Cu—Al alloy layer and the Al electrode layer are epitaxial layers. A thickness of the Cu—Al alloy layer is about 40% or less of a total thickness of the Cu—Al alloy layer and the Al electrode layer.
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公开(公告)号:US20240162883A1
公开(公告)日:2024-05-16
申请号:US18420927
申请日:2024-01-24
Applicant: Murata Manufacturing Co., Ltd.
Inventor: Haruki KYOUYA
CPC classification number: H03H9/131 , H03H9/02228 , H03H9/02992 , H10N30/877
Abstract: An acoustic wave device in which a piezoelectric film is directly or indirectly laminated on a support substrate, a first Interdigital Transducer (IDT) electrode, on a first main surface of the piezoelectric film, and a second IDT electrode on a second main surface, are provided. One of the first IDT electrode and the second IDT electrode is made of an epitaxial film and another of the first IDT electrode and the second IDT electrode is made of a non-epitaxial film.
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公开(公告)号:US20220416764A1
公开(公告)日:2022-12-29
申请号:US17903296
申请日:2022-09-06
Applicant: Murata Manufacturing Co., Ltd.
Inventor: Ryo NAKAGAWA , Haruki KYOUYA , Hiroshi SHIMIZU
Abstract: An acoustic wave device includes an IDT electrode laminated on a piezoelectric substrate and defining a first resonator, and an IDT electrode laminated on the piezoelectric substrate and defining a second resonator. The first and second resonators are connected in parallel or in series. The IDT electrode of the first resonator includes an electrode layer including an epitaxial film and the IDT electrode of the second resonator includes an electrode layer including a non-epitaxial film.
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