ACOUSTIC WAVE DEVICE
    2.
    发明申请

    公开(公告)号:US20250150056A1

    公开(公告)日:2025-05-08

    申请号:US19013107

    申请日:2025-01-08

    Abstract: An acoustic wave device includes a piezoelectric substrate and an interdigital transducer electrode on the piezoelectric substrate. The interdigital transducer electrode includes a close-contact layer on the piezoelectric substrate, a Cu—Al alloy layer on the close-contact layer, and an Al electrode layer on the Cu—Al alloy layer and having a weight-percentage concentration, in % by weight, of Al of greater than about 50% by weight. The Cu—Al alloy layer and the Al electrode layer are epitaxial layers. A thickness of the Cu—Al alloy layer is about 40% or less of a total thickness of the Cu—Al alloy layer and the Al electrode layer.

    ACOUSTIC WAVE DEVICE
    3.
    发明公开

    公开(公告)号:US20240162883A1

    公开(公告)日:2024-05-16

    申请号:US18420927

    申请日:2024-01-24

    Inventor: Haruki KYOUYA

    CPC classification number: H03H9/131 H03H9/02228 H03H9/02992 H10N30/877

    Abstract: An acoustic wave device in which a piezoelectric film is directly or indirectly laminated on a support substrate, a first Interdigital Transducer (IDT) electrode, on a first main surface of the piezoelectric film, and a second IDT electrode on a second main surface, are provided. One of the first IDT electrode and the second IDT electrode is made of an epitaxial film and another of the first IDT electrode and the second IDT electrode is made of a non-epitaxial film.

    ACOUSTIC WAVE DEVICE AND COMPOSITE FILTER DEVICE

    公开(公告)号:US20220416764A1

    公开(公告)日:2022-12-29

    申请号:US17903296

    申请日:2022-09-06

    Abstract: An acoustic wave device includes an IDT electrode laminated on a piezoelectric substrate and defining a first resonator, and an IDT electrode laminated on the piezoelectric substrate and defining a second resonator. The first and second resonators are connected in parallel or in series. The IDT electrode of the first resonator includes an electrode layer including an epitaxial film and the IDT electrode of the second resonator includes an electrode layer including a non-epitaxial film.

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