Abstract:
A communication device is provided with a band elimination filter that has one end connected to an antenna terminal, and a first multiplexer that is connected to the other end of the band elimination filter. The band elimination filter is configured to eliminate signals of a frequency band that is different from the frequencies of signals transmitted and received in the first multiplexer, and is configured from a filter circuit that includes a bulk wave element.
Abstract:
A piezoelectric thin-film resonator includes a piezoelectric thin film which includes aluminum nitride containing Sc and which has a concentration distribution such that the concentration of Sc is non-uniform in a thickness direction of the piezoelectric thin film; a first electrode; a second electrode facing the first electrode across the piezoelectric thin film; and a substrate supporting a piezoelectric vibrating section defined by the piezoelectric thin film and the first and second electrodes.
Abstract:
In an elastic wave device that significantly reduces and prevents deterioration of a frequency characteristic without roughening an undersurface of a piezoelectric substrate, a structure is bonded to a surface of a piezoelectric substrate other than a main surface of the piezoelectric substrate on which IDTs are located. The structure is provided so that a path difference is defined between a first component and a second component of a bulk wave that is excited by the IDT and propagates in the piezoelectric substrate toward the bonding surface. The first component of the bulk wave is reflected from the bonding surface. The second component of the bulk wave enters the structure from the bonding surface, propagates in the structure, enters the piezoelectric substrate from the bonding surface, and propagates in the same direction as that of the first component reflected from the bonding surface in the piezoelectric substrate.
Abstract:
In an elastic wave filter device, an elastic wave filter element chip is mounted on a board. In the elastic wave filter element chip, a ladder filter including a plurality of series arm resonators and a plurality of parallel arm resonators are provided. In/on the board, a first inductor connected in parallel to the series arm resonator and a second inductor connected between the parallel arm resonators P1-P3 and a ground potential are provided. In/on the board, a shield electrode is located between the first inductor and the second inductor.
Abstract:
A method of manufacturing a stacked thin film piezoelectric filter includes the steps of forming a lower thin film piezoelectric resonator on a substrate, measuring a frequency of the lower thin film piezoelectric resonator and adjusting the frequency, forming an acoustic coupling layer on the lower thin film piezoelectric resonator whose frequency has been adjusted, forming the stacked thin film piezoelectric filter by forming an upper thin film piezoelectric resonator on the acoustic coupling layer, and measuring a frequency of the upper thin film piezoelectric resonator and adjusting the frequency.