-
公开(公告)号：US20240396524A1
公开(公告)日：2024-11-28
申请号：US18598311
申请日：2024-03-07
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Ryo NAKAGAWA
Abstract: An acoustic wave device includes a piezoelectric substrate including a piezoelectric layer, and an IDT electrode on the piezoelectric layer and including first and second electrode fingers interdigitated with each other and coupled to mutually different potentials. A portion of the piezoelectric layer where the IDT electrode is provided includes an intersection region. When a direction in which the first electrode fingers and the second electrode fingers extend is an electrode finger extending direction, a direction orthogonal to the electrode finger extending direction is an electrode finger orthogonal direction, and the IDT electrode is viewed in the electrode finger orthogonal direction, a region where the first electrode finger and the second electrode finger, which are adjacent to each other, overlap each other is the intersection region. The piezoelectric layer includes a first region and a second region having a polarization direction different from that of the first region.
-
2.发明申请公开(公告)号：US20200328728A1
公开(公告)日：2020-10-15
申请号：US16914520
申请日：2020-06-29
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Ryo NAKAGAWA , Hideki IWAMOTO , Tsutomu TAKAI , Sunao YAMAZAKI
Abstract: Of a plurality of acoustic wave resonators, the acoustic wave resonator electrically closest to a first terminal is an antenna end resonator, the antenna end resonator is a first acoustic wave resonator and at least one acoustic wave resonator other than the antenna end resonator of the plurality of acoustic wave resonators is a second acoustic wave resonator. An acoustic wave device satisfies a first condition. The first condition is a condition that a high acoustic velocity layer of the first acoustic wave resonator and a high acoustic velocity layer of the second acoustic wave resonator each include a silicon substrate, a surface closer to a piezoelectric layer in the silicon substrate of the first acoustic wave resonator is a plane or a plane, and a surface closer to a piezoelectric layer in the silicon substrate of the second acoustic wave resonator is a plane.
-
公开(公告)号：US20190097604A1
公开(公告)日：2019-03-28
申请号：US16132508
申请日：2018-09-17
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Mari SAJI , Ryo NAKAGAWA , Hideki IWAMOTO
Abstract: An elastic wave device includes a piezoelectric layer, an IDT electrode on the piezoelectric layer, a high-acoustic-velocity member, a low-acoustic-velocity film between the high-acoustic-velocity member and the piezoelectric layer. The piezoelectric layer is made of lithium tantalate, the IDT electrode includes metal layers including an Al metal layer and a metal layer having a higher density than Al. Expression 1 is satisfied: 301.74667−10.83029×TLT−3.52155×TELE+0.10788×TLT2 +0.01003×TELE2 +0.03989×TLT×TELE≥0 expression 1, where λ represents a wavelength defined by an electrode finger pitch of the IDT electrode, TLT (%) represents a normalized film thickness of the piezoelectric layer to the wavelength λ, and TELE (%) represents a normalized film thickness of the IDT electrode in terms of Al to the wavelength λ.
-
公开(公告)号：US20150069882A1
公开(公告)日：2015-03-12
申请号：US14541180
申请日：2014-11-14
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Keiichi UMEDA , Ryo NAKAGAWA , Atsushi TANAKA
IPC: H03H9/02 , H01L41/16 , H01L41/047
CPC classification number: H03H9/02543 , H01L41/047 , H01L41/16 , H03H9/02574 , H03H9/0296
Abstract: A surface acoustic wave device includes a high acoustic velocity film in which a transversal wave propagates at a higher acoustic velocity than in a ScAlN film laminated on a substrate made of silicon or glass. The ScAlN film is laminated on the high acoustic velocity film, and IDT electrodes are laminated on the ScAlN film.
Abstract translation: 表面声波装置包括高音速膜，其中横向波以比在由硅或玻璃制成的基板上层叠的ScAlN膜更高的声速传播。 将ScAlN膜层叠在高声速膜上，将IDT电极层叠在ScAlN膜上。
-
公开(公告)号：US20210194455A1
公开(公告)日：2021-06-24
申请号：US17183431
申请日：2021-02-24
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Ryo NAKAGAWA , Hideki IWAMOTO
Abstract: An acoustic wave device includes a silicon oxide film, a lithium tantalate film, an IDT electrode, and a protection film that are laminated on a support substrate made of silicon. A wavelength normalized film thickness of a lithium tantalate film is denoted by TLT, an Euler angle is θLT, a wavelength normalized film thickness of the silicon oxide film is TS, a wavelength normalized film thickness of the IDT electrode in terms of aluminum thickness is TE, a wavelength normalized film thickness of a protection film is TP, a propagation direction in the support substrate is ψSi, and a wavelength normalized film thickness of the support substrate is TSi. Values of TLT, θLT, TS, TE, TP, and ψSi are set such that Ih corresponding to an intensity of a response of a spurious response represented by Formula (1) is greater than about −2.4 in a spurious response.
-
Patent Agency Ranking
6.发明申请公开(公告)号：US20200007109A1
公开(公告)日：2020-01-02
申请号：US16561244
申请日：2019-09-05
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Ryo NAKAGAWA , Hideki IWAMOTO , Tsutomu TAKAI
Abstract: An acoustic wave device includes a silicon oxide film, a piezoelectric body made of lithium tantalate, and interdigital transducer electrodes stacked on a supporting substrate made of silicon, in which the values of the wave length-normalized film thickness and the Euler angle of the piezoelectric body made of lithium tantalate, the wave length-normalized film thickness of the silicon oxide film, the wave length-normalized film thickness of the interdigital transducer electrodes in terms of aluminum thickness, the propagation direction of the supporting substrate, and the wave length-normalized film thickness of the supporting substrate are set such that represented by Formula (1) for at least one of responses of first, second, and third higher-order modes is more than about −2.4, and TSi>20.
-
公开(公告)号：US20170366167A1
公开(公告)日：2017-12-21
申请号：US15679321
申请日：2017-08-17
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Ryo NAKAGAWA
CPC classification number: H03H9/64 , H03H9/145 , H03H9/1457 , H03H9/25 , H03H9/725
Abstract: An elastic wave resonator including a piezoelectric substrate and an IDT electrode, the IDT electrode includes a first electrode finger and a second electrode finger arranged next to the first electrode finger; when W1 is the width of the first electrode finger, W2 is the width of the second electrode finger, and L is a pitch or an electrode finger center distance between the first electrode finger and the second electrode finger; a metallization ratio (W1/L) of the first electrode finger is smaller than a metallization ratio (W2/L) of the second electrode finger; a sum (W1/L+W2/L) of the metallization ratio of the first electrode finger and the metallization ratio of the second electrode finger is between about 0.65 and about 1.00 inclusive, and a ratio (W2/W1) between a width of the first electrode finger and a width of the second electrode finger is between about 1.12 and about 2.33 inclusive, or W1/L+W2/L is larger than about 1.00, and W2/W1 is between about 1.40 and about 2.34 inclusive.
-
8.发明申请公开(公告)号：US20160118956A1
公开(公告)日：2016-04-28
申请号：US14985589
申请日：2015-12-31
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Takashi KIHARA , Kenichi UESAKA , Ryo NAKAGAWA
IPC: H03H9/25 , H03H9/64 , H01L41/047 , H03H9/205
CPC classification number: H03H9/25 , H01L41/047 , H03H9/02015 , H03H9/02992 , H03H9/205 , H03H9/64 , H03H9/6433 , H03H9/725
Abstract: In a surface acoustic wave resonator, a first IDT electrode defining a first IDT and a second IDT electrode defining a second IDT are located on a first principal surface of a piezoelectric substrate. A direction of an electric field applied to the first IDT electrode and a direction of an electric field applied to the second IDT electrode are opposite to each other with respect to a direction of a projected axis resulting from projecting a c-axis of the piezoelectric substrate to the first principal surface of the piezoelectric substrate.
Abstract translation: 在表面声波谐振器中，限定第一IDT的第一IDT电极和限定第二IDT的第二IDT电极位于压电基板的第一主表面上。 施加到第一IDT电极的电场的方向和施加到第二IDT电极的电场的方向相对于由压电基板的c轴的突出而引起的投影轴的方向彼此相反 到压电基板的第一主表面。
-
公开(公告)号：US20240396525A1
公开(公告)日：2024-11-28
申请号：US18600880
申请日：2024-03-11
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Ryo NAKAGAWA
Abstract: An acoustic wave device includes a piezoelectric substrate including a piezoelectric layer, and an IDT electrode on the piezoelectric layer and includes first and second electrode fingers interdigitated with each other and coupled to mutually different potentials. A portion of the piezoelectric layer including the IDT electrode includes an intersection region. When a direction in which the first and second electrode fingers extend is an electrode finger extending direction, a direction orthogonal to the electrode finger extending direction is an electrode finger orthogonal direction, and the IDT electrode is viewed in the electrode finger orthogonal direction, a region where the first and second electrode fingers adjacent to each other overlap each other is the intersection region, the piezoelectric layer includes first and second regions with polarization directions different from each other, and the first region and the second region are positioned at least in the intersection region.
-
10.发明申请公开(公告)号：US20200328822A1
公开(公告)日：2020-10-15
申请号：US16914521
申请日：2020-06-29
Applicant: Murata Manufacturing Co., Ltd.
Inventor： Ryo NAKAGAWA , Katsuya DAIMON , Hideki IWAMOTO , Tsutomu TAKAI
Abstract: An acoustic wave device is provided between a first terminal that is an antenna terminal and a second terminal that is different from the first terminal, and includes a plurality of acoustic wave resonators. The plurality of acoustic wave resonators include a plurality of series arm resonators and a plurality of parallel arm resonators. When the acoustic wave resonator electrically closest to the first terminal among the plurality of acoustic wave resonators is an antenna end resonator, the antenna end resonator is a SAW resonator or a BAW resonator. At least one acoustic wave resonator other than the antenna end resonator among the plurality of acoustic wave resonators is a first acoustic wave resonator.
-
-
-
-
-
-
-
-
-
Search Results
28
records
(took 0.022 seconds)
